MRAM storage unit
A storage unit and memory unit technology, applied in information storage, static memory, digital memory information, etc., can solve the problems of small reading window, error-prone reading, overlapping distribution curves, etc., to reduce the reading error rate, It is not easy to read the wrong effect
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[0042] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0043] An embodiment of the present invention provides an MRAM memory unit, comprising: two magnetic tunnel junctions and a spin-orbit moment supply line, the two magnetic tunnel junctions are respectively located on the same side surface of the spin-orbit moment supply line, and each magnetic tunnel The free layer of the junction is close to...
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