Heat dissipation bottom plate, heat dissipation element and IGBT module

Abstract

The invention relates to a heat dissipation bottom plate, a heat dissipation element and an IGBT module. The heat dissipation bottom plate comprises an aluminum silicon carbide plate and a heat dissipation column, wherein the aluminum silicon carbide plate is provided with a first main surface and a second main surface which are oppositely arranged, at least a part of the first main surface is covered with a first copper spraying layer, the heat dissipation column is welded to the first copper spraying layer, thickness of the first copper spraying layer ranges from 20-250 mu m, and the heat dissipation column is a copper-containing heat dissipation column. The heat dissipation bottom plate comprises the aluminum silicon carbide plate and the copper-containing heat dissipation column weldedto the aluminum silicon carbide plate, so the heat dissipation bottom plate has a linear expansion coefficient better matched with that of a ceramic circuit substrate, the module packaging performance stability can be improved, and the service life is prolonged; the copper-containing heat dissipation column with high heat conductivity are arranged in the heat dissipation bottom plate, so the heatdissipation performance is further improved, moreover, the copper spraying layer is arranged at the welding position between the copper-containing heat dissipation column and the aluminum silicon carbide plate, a joint layer which is proper in melting point and thermal expansion coefficient and high in mechanical strength is provided, and the binding force between the copper-containing heat dissipation column and the aluminum silicon carbide plate can be further improved.

Description

technical field [0001] The present disclosure relates to the field of power modules, in particular, to a heat dissipation bottom plate, a heat dissipation element and an IGBT module. Background technique [0002] At present, the substrates used for high-power IGBT module packaging are mainly Cu (copper) substrates and AlSiC (aluminum silicon carbon) substrates. Compared with the Cu base plate, the linear expansion coefficient of the AlSiC base plate is more excellent in thermal matching with the ceramic circuit substrate and chip, the thermal stress is smaller, and the specific strength of AlSiC is higher, which can make the module packaging performance more stable and increase the service life. However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind that of copper, which is 380W / (m·K), and the heat dissipation pin of the AlSiC base plate is Al(aluminum ) material, the thermal conductivity is only 1...

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Problems solved by technology

However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind the thermal conductivity of copper of 380W / (m·K), and the heat dissipation pin of the AlSiC base plate is Al(aluminum ) material, the thermal conductivity is only 150W / (m·K), which further limits the efficiency of heat dissipation in contact with the coolant

At the same time, in the production process of the existing AlSiC heat dissipation base plate, the Al Pin pin is directly cast and formed through the mold. When the Pin pin is demolded, the mold suffers from large friction force, which is easy to be damaged, and the cost of the mold is relatively high.

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