Heat dissipation bottom plate, heat dissipation element and preparation method thereof, and igbt module

Abstract

The present disclosure relates to a heat dissipation bottom plate, a heat dissipation element and its preparation method, and an IGBT module. The heat dissipation bottom plate includes an aluminum silicon carbide plate and a heat dissipation column, and the aluminum silicon carbide plate has a first main surface and a second main surface oppositely arranged , at least part of the first main surface is covered with a first sprayed copper layer, at least part of the second main surface is covered with a second sprayed copper layer, and the heat dissipation column is welded to the first sprayed copper layer, so The heat dissipation column mentioned above is a heat dissipation column containing copper. The heat dissipation bottom plate of the present disclosure has a linear expansion coefficient that is more compatible with the ceramic circuit substrate, which can improve the stability of the module packaging performance and prolong the service life; the copper-containing heat dissipation column with high thermal conductivity in the heat dissipation bottom plate further improves the heat dissipation performance; at the same time, There is a copper-sprayed layer at the weld between the copper-containing heat dissipation column and the aluminum silicon carbide plate, which provides a bonding layer with a suitable melting point and thermal expansion coefficient and high mechanical strength, which can further improve the contact between the copper-containing heat dissipation column and the aluminum silicon carbide plate. Binding force.

Description

technical field [0001] The present disclosure relates to the field of power modules, in particular, to a heat dissipation bottom plate, a heat dissipation element, a preparation method thereof, and an IGBT module. Background technique [0002] At present, the substrates used for high-power IGBT module packaging are mainly Cu (copper) substrates and AlSiC (aluminum silicon carbon) substrates. Compared with the Cu base plate, the linear expansion coefficient of the AlSiC base plate is more excellent in thermal matching with the ceramic circuit substrate and chip, the thermal stress is smaller, and the specific strength of AlSiC is higher, which can make the module packaging performance more stable and increase the service life. However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind that of copper, which is 380W / (m·K), and the heat dissipation pin of the AlSiC base plate is Al(aluminum ) material, the...

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Problems solved by technology

However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind the thermal conductivity of copper of 380W / (m·K), and the heat dissipation pin of the AlSiC base plate is Al(aluminum ) material, the thermal conductivity is only 150W / (m·K), which further limits the efficiency of heat dissipation in contact with the coolant

At the same time, in the production process of the existing AlSiC heat dissipation base plate, the Al Pin pin is directly cast and formed through the mold. When the Pin pin is demolded, the mold suffers from large friction force, which is easy to be damaged, and the cost of the mold is relatively high.

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