Heat dissipation element and IGBT module

A heat dissipation element and module technology, which is applied in the direction of electrical components, semiconductor devices, electric solid devices, etc., can solve the problems of limiting the efficiency of cooling liquid contact heat dissipation, large mold friction, and high mold cost, so as to improve heat dissipation performance and thermal expansion. Appropriate coefficient and the effect of improving binding force

Active Publication Date: 2019-12-27
BYD CO LTD
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind the thermal conductivity of copper of 380W(m·K), and the heat dissipation pin of the AlSiC base plate is Al (aluminum). Material, heat conduction is only 150W / (m·K), which further limits the efficiency of heat dissipation in contact with coolant
At the same time, in the production process of the existing AlSiC heat dissipation base plate, the Al Pin pin is directly cast and formed through the mold. When the Pin pin is demolded, the mold suffers from large friction force, which is easy to be damaged, and the cost of the mold is relatively high.

Method used

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  • Heat dissipation element and IGBT module
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Examples

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Embodiment 1

[0065] This embodiment is used to illustrate the heat dissipation element of the present disclosure and its preparation method. The structure of the heat dissipation element is as follows figure 1 Shown, its preparation method comprises the steps:

[0066] 1. Air pressure casting and infiltration forming AlSiC board: use air pressure infiltration chamber equipment to preheat the SiC substrate to 500-700 °C, pour aluminum in turn, vacuumize (remove gas, prevent product from producing pores), and fill with nitrogen Pressurize (4 ~ 10MPa, to promote the aluminum liquid to fill the mold evenly) and cool down to obtain an AlSiC plate;

[0067] 2. Nickel-plate the surface of the AlSiC plate, and the thickness of the nickel layer is 12 μm;

[0068] 3. Cold-spray copper on the first main surface of the nickel-plated AlSiC plate to form the first copper-spray layer, with a thickness of 100 μm;

[0069] 4. Surface cleaning of heat dissipation column: Metal copper heat dissipation colu...

Embodiment 2～5

[0073] Using the method and materials of Example 1, the difference is that Al 2 o 3 The thickness of the copper layers on both sides of the DBC is different from that of Example 1, see Table 2 for details.

Embodiment 6

[0075] Using the method and materials of Example 1, the difference is that after step 1, the surface of the AlSiC plate is nickel-plated with a nickel layer thickness of 12 μm, and then the nickel-plated layer on the first main surface is removed by sandblasting pretreatment, The surface of the AlSiC plate is exposed, and copper spraying is carried out on the exposed surface of the AlSiC plate to obtain the first copper spray layer with a thickness of 100 μm. The structure of the heat dissipation element is as follows: figure 2 shown.

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Abstract

The invention relates to a heat dissipation element and an IGBT module. The heat dissipation element comprises a heat dissipation bottom plate and a copper-clad ceramic substrate, wherein the heat dissipation bottom plate comprises an aluminum silicon carbide plate and a heat dissipation column, at least a part of a first main surface is covered with a first copper spraying layer, the heat dissipation column is welded to a surface of the first copper spraying layer, the heat dissipation column is a copper-containing heat dissipation column, the surface of the aluminum silicon carbide plate comprises a heat dissipation column welding area located on the first main surface and a non-heat-dissipation-column welding area outside the welding area, at least the non-heat-dissipation-column welding area is coated with a first metal nickel layer, the heat dissipation column welding area is coated with or not coated with the first metal nickel layer, the copper-clad ceramic substrate comprises aceramic insulating plate, the ceramic insulating plate is provided with a first surface and a second surface which are oppositely arranged, the first surface and the second surface of the ceramic insulating plate are provided with a first copper layer and a second copper layer which are different in thickness respectively, and the first copper layer is welded to the second main surface of the heat dissipation bottom plate in an attached mode. The heat dissipation element is advantaged in that the heat dissipation element is good in heat conductivity matching performance, fast in heat dissipation and high in packaging and using stability.

Description

technical field [0001] The present disclosure relates to the field of power modules, in particular, to a heat dissipation element and an IGBT module. Background technique [0002] At present, the substrates used for high-power IGBT module packaging are mainly Cu (copper) substrates and AlSiC (aluminum silicon carbon) substrates. Compared with the Cu base plate, the linear expansion coefficient of the AlSiC base plate is more excellent in thermal matching with the ceramic circuit substrate and chip, the thermal stress is smaller, and the specific strength of AlSiC is higher, which can make the module packaging performance more stable and increase the service life. However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind the thermal conductivity of copper of 380W(m·K), and the heat dissipation pin of the AlSiC base plate is Al (aluminum). The thermal conductivity of the material is only 150W / (m·K), whi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/373H01L23/14
CPCH01L23/14H01L23/367H01L23/3736
Inventor 宫清吴波徐强刘成臣
Owner BYD CO LTD
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