Heat dissipation element and IGBT module

Abstract

The invention relates to a heat dissipation element and an IGBT module. The heat dissipation element comprises a heat dissipation bottom plate and a copper-clad ceramic substrate, wherein the heat dissipation bottom plate comprises an aluminum silicon carbide plate and a heat dissipation column, at least a part of a first main surface is covered with a first copper spraying layer, the heat dissipation column is welded to a surface of the first copper spraying layer, the heat dissipation column is a copper-containing heat dissipation column, the surface of the aluminum silicon carbide plate comprises a heat dissipation column welding area located on the first main surface and a non-heat-dissipation-column welding area outside the welding area, at least the non-heat-dissipation-column welding area is coated with a first metal nickel layer, the heat dissipation column welding area is coated with or not coated with the first metal nickel layer, the copper-clad ceramic substrate comprises aceramic insulating plate, the ceramic insulating plate is provided with a first surface and a second surface which are oppositely arranged, the first surface and the second surface of the ceramic insulating plate are provided with a first copper layer and a second copper layer which are different in thickness respectively, and the first copper layer is welded to the second main surface of the heat dissipation bottom plate in an attached mode. The heat dissipation element is advantaged in that the heat dissipation element is good in heat conductivity matching performance, fast in heat dissipation and high in packaging and using stability.

Description

technical field [0001] The present disclosure relates to the field of power modules, in particular, to a heat dissipation element and an IGBT module. Background technique [0002] At present, the substrates used for high-power IGBT module packaging are mainly Cu (copper) substrates and AlSiC (aluminum silicon carbon) substrates. Compared with the Cu base plate, the linear expansion coefficient of the AlSiC base plate is more excellent in thermal matching with the ceramic circuit substrate and chip, the thermal stress is smaller, and the specific strength of AlSiC is higher, which can make the module packaging performance more stable and increase the service life. However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind the thermal conductivity of copper of 380W(m·K), and the heat dissipation pin of the AlSiC base plate is Al (aluminum). The thermal conductivity of the material is only 150W / (m·K), whi...

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Problems solved by technology

However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind the thermal conductivity of copper of 380W(m·K), and the heat dissipation pin of the AlSiC base plate is Al (aluminum). Material, heat conduction is only 150W / (m·K), which further limits the efficiency of heat dissipation in contact with coolant

At the same time, in the production process of the existing AlSiC heat dissipation base plate, the Al Pin pin is directly cast and formed through the mold. When the Pin pin is demolded, the mold suffers from large friction force, which is easy to be damaged, and the cost of the mold is relatively high.

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