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A method for preparing cobalt-sulfur thin films on copper surfaces based on reverse displacement

A technology of reverse displacement and copper surface, applied in chemical instruments and methods, physical/chemical process catalysts, liquid chemical plating, etc., can solve problems such as complex processes, and achieve the effect of less operation process, short time consumption and low cost

Active Publication Date: 2021-01-01
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for preparing a cobalt-sulfur thin film on a copper surface based on reverse displacement. The technical problem to be solved is to overcome the shortcomings of the existing method for preparing a cobalt-sulfur thin film on a copper surface. Thin film process complexity and overall cost for the purpose

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  • A method for preparing cobalt-sulfur thin films on copper surfaces based on reverse displacement
  • A method for preparing cobalt-sulfur thin films on copper surfaces based on reverse displacement
  • A method for preparing cobalt-sulfur thin films on copper surfaces based on reverse displacement

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Embodiment 1

[0023] The present invention designs a method for preparing cobalt-sulfur thin films on copper surfaces based on reverse displacement. The composition of reverse displacement deposition solution and the content of each component are: cobalt chloride 20g / L, sodium thiosulfate 120g / L, dilute Sulfuric acid, etc. to adjust the pH value of the deposition solution to 5. Polish the copper substrate with 400#, 800#, and 1200# sandpaper to remove surface oxides and pollutants; then ultrasonically clean in ethanol solution and dry with nitrogen; then put the polished and cleaned copper sample into reverse displacement deposition The deposition conditions are as follows: reverse displacement deposition solution temperature 20°C, deposition time 10 minutes; after the deposition is completed, take out the copper sheet, wash the residual deposition solution with deionized water, and dry it with nitrogen, then the copper A cobalt-sulfur film is obtained on the surface.

[0024] Because sodi...

Embodiment 2

[0027] The present invention designs a method for preparing cobalt-sulfur thin films on copper surfaces based on reverse displacement. The composition of the reverse displacement deposition solution and the content of each component are: cobalt sulfate 200g / L, sodium thiosulfate 90g / L, dilute sulfuric acid Adjust the pH value of the deposition solution to 7. Polish the copper substrate with 400#, 800#, and 1200# sandpaper to remove surface oxides and pollutants; then ultrasonically clean in ethanol solution and dry with nitrogen; then put the polished and cleaned copper sample into reverse displacement deposition The deposition conditions are as follows: the temperature of the reverse displacement deposition solution is 40°C, and the deposition time is 20 minutes; after the deposition is completed, the copper sheet is taken out, the residual deposition solution is cleaned with deionized water, and dried with nitrogen, which can be deposited on the copper surface A cobalt-sulfu...

Embodiment 3

[0029] The present invention designs a method for preparing cobalt-sulfur thin films on the copper surface based on reverse displacement. The composition of the reverse displacement deposition solution and the content of each component are: cobalt nitrate 10g / L, sodium thiosulfate 320g / L, dilute sulfuric acid Adjust the pH value of the deposition solution to 3. Polish the copper substrate with 400#, 800#, and 1200# sandpaper to remove surface oxides and pollutants; then ultrasonically clean in ethanol solution and dry with nitrogen; then put the polished and cleaned copper sample into reverse displacement deposition Deposition in the liquid, the deposition conditions are: the temperature of the reverse displacement deposition liquid is 80 ° C, and the deposition time is 5 minutes; after the deposition is completed, the copper sheet is taken out, the residual deposition liquid is cleaned with deionized water, and dried with nitrogen, which can be deposited on the copper surface ...

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Abstract

The present invention relates to a method for preparing a cobalt-sulfur film on a copper surface, specifically a method for preparing a cobalt-sulfur film on a copper surface based on reverse displacement, which includes the following steps: S1. Preparing a reverse displacement deposition liquid: the composition of the reverse displacement deposition liquid and each group The content of the components is: cobalt salt 10-200g / L, additive 90-320g / L, use dilute sulfuric acid, etc. to adjust the pH value of the sedimentation solution to 3-7; S2, copper sample treatment: use sandpaper to polish the copper base and remove the surface oxides and contaminants, and then ultrasonically cleaned in ethanol solution and blown dry with nitrogen; S3. Deposition coating: the copper sample is placed in the reverse displacement deposition solution for deposition; S4. Cobalt-sulfur film copper sample processing: take out the copper sample , clean the remaining deposition liquid with deionized water, and blow dry with nitrogen; using the method of the present invention, a high-quality cobalt-sulfur film can be directly prepared on the copper surface, and has the advantages of simple composition of the deposition liquid, less operating procedures, short time-consuming and low cost and other advantages.

Description

technical field [0001] The invention relates to a method for preparing a cobalt-sulfur thin film on a copper surface, in particular to a method for preparing a cobalt-sulfur thin film on a copper surface based on reverse displacement. Background technique [0002] The electrolysis reaction of water is composed of two half-reactions, the reduction reaction of water is called the hydrogen evolution reaction (HER) and the oxidation reaction of water is called the oxygen evolution reaction (OER). Under the standard state, the voltage of the reversible electrolytic cell for water splitting reaction is 1.23V, but the kinetic hindrance in the process of hydrogen evolution reaction and oxygen evolution reaction makes the applied voltage required by the actual electrolyzer much higher than 1.23V. Studies have found that using some noble metal catalytic materials on the electrode surface, such as platinum-based catalytic materials, can effectively reduce the overpotential required for...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/16C25B1/04B01J27/043
CPCC23C18/1633C25B1/04B01J27/043C25B11/051C25B11/075B01J35/33Y02E60/36
Inventor 张兴凯张俊彦甘楠
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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