Nanometer ditungsten carbide particles, and preparation method and applications thereof

Abstract

The invention discloses nanometer ditungsten carbide particles, and a preparation method and applications thereof. The preparation method comprises following steps: tungsten trioxide powder and urea are ground in a mortar according to a certain mass ratio and are uniformly mixed, and then an obtained mixture is transferred into a crucible; and the nanometer ditungsten carbide particles are prepared, wherein carrying out heat treatment on a uniformly mixed powder in an inert atmosphere to obtain W2C nano particles. The method is simple in process, easy to control and capable of saving energy, the obtained nanometer ditungsten carbide particles are uniform, the crystallinity degree is high, no other impure phase is generated, and the method is suitable for large-scale production and has goodelectrochemical performance.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a nano-ditungsten carbide particle and a preparation method and application thereof. Background technique [0002] Tungsten carbide (W X C) It has a high melting point, good thermal conductivity and excellent strength. Not only can it be used as catalyst carrier and engineering structure material, but also can operate stably in harsh environment, such as high temperature liquid filter, high current density cathode material, ion engine of emitter electron emission device. Recently, it has attracted attention as an alternative material for noble metal electrocatalysts in electrocatalytic hydrogen evolution and hydrogen production. [0003] In the W-C system, the main phases are tungsten carbide (WC) and ditungsten carbide (W 2 C). The advantage of ditungsten carbide as a cathode catalyst is that it is not only catalytic but can replace noble metals such...

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Problems solved by technology

[0004] So far, many preparation methods to obtain phase-pure WC have been reported, however, the phase-pure WC 2 The preparation method of C is rarely reported, mainly because the pure phase W 2 The synthesis of C is more demanding, usually by combining metal precursors with gaseous carbon (such as CH 4 , C 2 h 6 Or CO) is prepared by high temperature (>700°C) reduction, uncontrollable particle sintering, resulting in a positively low surface of the material

Second, the introduction of excessive gaseous carbon precursors may also cause a large amount of coking on the catalyst surface, seriously deteriorating its catalytic performance.

Therefore W 2 The preparation method of C can only be realized in a narrow range of composition and temperature, and because the preparation method of ditungsten carbide is too cumbersome, etc., and the product has many impurities, its application is limited.

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