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A selenide nanorod, its preparation method and its prepared photodetector

A nanorod and selenide technology, applied in nanotechnology, photovoltaic power generation, nanotechnology, etc., can solve the problems of low thermoelectric power factor, detector spectral responsivity, low external quantum efficiency, and low conductivity

Active Publication Date: 2020-04-07
南京倍格电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in actual use, due to its low intrinsic conductivity, resulting in low thermoelectric power factor, the spectral responsivity and external quantum efficiency of the detector prepared by this method are low

Method used

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  • A selenide nanorod, its preparation method and its prepared photodetector
  • A selenide nanorod, its preparation method and its prepared photodetector
  • A selenide nanorod, its preparation method and its prepared photodetector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Preparation of selenide nanorods: 20g of KOH, 5mmol of SeO 2 powder, 0.1mmol AgNO 3 and 4.9 mmol of dried In(NO 3 ) 3 ▪4H 2 O is put into a stainless steel reaction kettle lined with polytetrafluoroethylene, mechanically stirred, and the reactants are fully mixed, then 10ml of 1-octadecene and 0.2ml of ethylenediamine are added to the reaction vessel, under the protection of argon , heat up to 80-100°C, and use ultrasonic stirring until the solids are completely dissolved; then, under the protection of argon, continue to heat up to 200-240°C, and use a magnetic stirrer to stir vigorously, and keep it warm for 12 hours; wait for it to cool to room temperature Afterwards, the nanorod products were collected.

[0040] Impurity removal of selenide nanorods: Dissolve the product with deionized water, wash it, and then use dilute hydrochloric acid to adjust and remove potassium hydroxide on the surface of the product, and then continue to use deionized water to clean; the...

Embodiment 2

[0044] Preparation of selenide nanorods: 20g of KOH, 5mmol of SeO2 powder, 0.1mmol of AgNO3 and 4.9mmol of dried In(NO3)3 4H2O were dropped into a stainless steel reaction kettle lined with polytetrafluoroethylene. Stir mechanically to mix the reactants thoroughly, then add 5ml of deionized water and 0.1ml of ethylenediamine to the reaction vessel, under the protection of argon, raise the temperature to 80-100°C, and use ultrasonic stirring until all the solids are dissolved; Then, under the protection of argon, continue to heat up to 200-240° C., stir vigorously with a magnetic stirrer, and keep the temperature for 12 hours; after it is cooled to room temperature, the nanorod product is collected.

[0045] Impurity removal of selenide nanorods: Dissolve the product with deionized water, wash it, and then use dilute hydrochloric acid to adjust and remove potassium hydroxide on the surface of the product, and then continue to use deionized water to clean; then add the cleaned pr...

Embodiment 3

[0049] Preparation of selenide nanorods: 20g of KOH, 5mmol of SeO 2 powder and 5mmol of dried In(NO 3 ) 3 ▪4H 2 O is put into a stainless steel reaction kettle lined with polytetrafluoroethylene, mechanically stirred, and the reactants are fully mixed, then 10ml of 1-octadecene and 0.2ml of ethylenediamine are added to the reaction vessel, under the protection of argon , heat up to 80-100°C, and use ultrasonic stirring until the solids are completely dissolved; then, under the protection of argon, continue to heat up to 200-240°C, and use a magnetic stirrer to stir vigorously, and keep it warm for 12 hours; wait for it to cool to room temperature Afterwards, the nanorod products were collected.

[0050] Impurity removal of selenide nanorods: Dissolve the product with deionized water, wash it, and then use dilute hydrochloric acid to adjust and remove potassium hydroxide on the surface of the product, and then continue to use deionized water to clean; then add the cleaned pr...

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Abstract

The invention discloses a selenide nanorod, a preparation method thereof and a photodetector prepared thereof, belonging to the field of preparation of nanometer semiconductors. Including the following steps: KOH, SeO 2 Powder, AgNO 3 and In(NO 3 ) 3 Dissolving in a non-coordinating solvent and a small amount of ethylenediamine, under the protection of an inert gas, at a temperature of 200-240° C., stirring vigorously, and keeping warm for 12-24 hours, to prepare selenide nanorods. The hydroxide ions of the alkali in the molten state are separated into and, and then under the dilution of the non-coordinating solvent, the viscosity is reduced and the fluidity is improved. In such an alkaline environment of the molten alkali, In 2 Se 3 Form the crystal nuclei of the wurtzite structure, and finally through the competitive adsorption of ethylenediamine molecules on the crystal faces in the reaction mixture, induce the growth direction, and promote the growth direction of In 2 Se 3 The nuclei continue to adsorb and grow anisotropically and in small amounts. The problem of low spectral responsivity and external quantum efficiency of the detector due to low intrinsic conductivity in actual use is solved.

Description

technical field [0001] The invention belongs to the field of preparation of nano-semiconductors, in particular to a selenide nanorod, a preparation method thereof and a photodetector prepared therefrom. Background technique [0002] As the basis of nanotechnology, the preparation and application of new nanomaterials has become an important research direction in nanotechnology. Semiconductor nanomaterials have gradually become a hot research material in today's society due to their unique physical and chemical properties. By applying nano-semiconductors to optoelectronic devices, researchers have successfully developed a series of representative functional devices such as light-emitting diodes, large solar cells and photodetectors, which have played an indispensable role in actual industrial production and social life. role. Taking photodetectors as an example, the photoconductive properties of semiconductor materials are a key indicator to determine the performance of phot...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/032H01L31/0256H01L31/101B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/0256H01L31/0322H01L31/035227H01L31/101Y02E10/541Y02P70/50
Inventor 蒋连福董文英
Owner 南京倍格电子科技有限公司
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