A sample preparation method for observing the crystallographic orientation of the inner grains of the Al metallization of an igbt chip

Abstract

The invention discloses a sample preparation method for observing the crystal orientation of the inner crystal grains of the Al metallization of an IGBT chip, which comprises the following steps: removing the outer package of a high-power IGBT module; removing the module bottom plate; and removing the silica gel on the surface of the sample; The sample is physically cut with a slow saw; the sample is polished with a metallographic grinding and polishing machine; the sample is processed with a focused ion beam; the sample is observed with electron backscatter diffraction technology. The invention has the advantages of being able to prepare a sample for observing the grain crystal orientation of the Al metallization layer section of the high-power IGBT chip, the preparation method is simple and feasible, and the crystal orientation observation can be performed on the Al metallization layer section grain of the high-power IGBT chip.

Description

technical field [0001] The invention relates to the observation technology of the microstructure of materials, in particular to a sample preparation method for observing the crystal direction of the inner crystal grains of the Al metallization of the IGBT chip. Background technique [0002] At present, after completing the power cycle test or temperature cycle test of the high-power IGBT module, in order to observe the crystal orientation of the crystal grains in the Al metallization layer of the high-power IGBT chip subjected to different cycles, the current method is to use X-ray diffraction (XRD, X-ray diffraction) The crystal orientation test is performed on the Al metallization layer of the high-power IGBT chip. Compared with the EBSD technology, the XRD technology cannot obtain the crystal orientation of each crystal grain and the orientation difference between crystal grains. As the power cycle experiment or temperature cycle experiment proceeds, the Al metallization ...

AI Technical Summary

Problems solved by technology

[0002] At present, after completing the power cycle test or temperature cycle test of the high-power IGBT module, in order to observe the crystal orientation of the crystal grains in the Al metallization layer of the high-power IGBT chip subjected to different cycles, the current method is to use X-ray diffraction (XRD, X-ray diffraction) is used to test the crystal orientation of the Al metallization layer of the high-power IGBT chip. Compared with the EBSD technology, the XRD technology cannot obtain the crystal orientation of each grain and the orientation difference between the grains

As the power cycle test or temperature cycle test proceeds, the Al metallization layer gradually becomes rough, so it is impossible to observe the Al metallization layer on the surface of the high-power IGBT chip after the cycle test by EBSD technology

Images