Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Star-shaped aromatized inorganic acid radical semiconductor material, preparation and application

An inorganic acid and free radical technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, and imino compound preparation, etc., can solve the problems of high reactivity and difficulty in designing organic small molecule semiconductor materials, achieve high conductivity, prevent The effect of interface erosion and stabilization of free radical signal

Active Publication Date: 2019-09-27
SOUTH CHINA UNIV OF TECH
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to design free radical-containing organic small molecule semiconductor materials due to the high reactivity of free radical molecules.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Star-shaped aromatized inorganic acid radical semiconductor material, preparation and application
  • Star-shaped aromatized inorganic acid radical semiconductor material, preparation and application
  • Star-shaped aromatized inorganic acid radical semiconductor material, preparation and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Combine 4-boronate-4',4'-dimethoxytriphenylamine (754mg, 1.75mmol) with tris(4-bromophenyl)amine (241mg, 0.5mmol), tetrakistriphenylphosphine palladium (58mg, 0.05mmol), was added to a mixed solvent of 30ml of toluene and 10ml of ethanol, 3ml of 2M sodium carbonate solution was added under the protection of nitrogen, and reflux reaction was carried out at 110°C for 12h. After separation and purification, 324mg of the reaction intermediate product was obtained, and the yield was 56.2 %. Dissolve 230 mg of the above product in 15 ml of dichloromethane, and add 3 ml of 1M concentration of BBr at -78°C in a nitrogen atmosphere 3 , and then moved to room temperature for 12h, quenched with methanol. The reaction product was further oxidized in air after separation and purification to obtain 184 mg of the product with a yield of 86%.

[0041] The ultraviolet-visible light absorption spectrum and electron paramagnetic resonance spectrum of the product obtained in this embodim...

Embodiment 2

[0050] 4-boronate-4',4'-dimethoxytriphenylamine (754mg, 3.5mmol) and 2,4,6-tris-(4-bromophenyl)-[1,3,5]tri Add oxazine (273mg, 0.5mmol), tetrakistriphenylphosphine palladium (58mg, 0.05mmol) into a mixed solvent of 30ml of toluene and 10ml of ethanol, add 3ml of 2M sodium carbonate solution under nitrogen protection, and reflux at 110°C After reacting for 12 hours, 373 mg of a reaction intermediate product was obtained after separation and purification, with a yield of 62.0%. Dissolve 243mg of the above product in 15ml of dichloromethane, add 3ml of 1M concentration of BBr at -78°C under nitrogen atmosphere 3 , and then moved to room temperature to react for 12h, and the reaction product was further oxidized in air after separation and purification to obtain 198 mg of the product with a yield of 87.2%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of organic photoelectric materials, and discloses a star-shaped aromatized inorganic acid radical semiconductor material, preparation and application. The star-shaped aromatized inorganic acid radical semiconductor material has a structural formula as shown in the following formula (I), and the formula (I) is shown in the description. The obtained material contains a plurality of phenoxy radicals, can be dissolved in high-polar solvents such as dimethyl sulfoxide and alcohol, has good film forming property, and can prevent interface erosion of low-polar solvents such as toluene or chlorobenzene in a multilayer device; the material has strong thermal stability and electrochemical stability, and the mechanism is that unique conjugated radicals can resonate into a closed-shell structure similar to nitro; in addition, the open-shell radical resonant structure can effectively improve the conductivity, good hole transport performance is realized without additional dopants, and the material can be applied to fields such as organic photoelectric devices.

Description

technical field [0001] The invention belongs to the field of organic photoelectric materials, and in particular relates to a star-shaped aromatized inorganic acid radical semiconductor material and its preparation and application. Background technique [0002] In multilayer organic electronic device structures, in order to overcome the hole charge transport barrier, a hole transport material layer is usually introduced, which functions to transport holes and block electrons, thereby improving the efficiency of the device. [0003] Compared with the commercialized poly(3,4-ethylenedioxythiophene / polystyrene sulfonate (PEDOT:PSS), the organic small molecule hole transport material based on triphenylamine has the characteristics of definite structure, convenient purification and solution processing. , are widely used in the hole transport layer of perovskite solar cells. However, when these hole transport materials are used in organic solar cells, the processing of the active ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C07C251/22C07C249/02C07D251/24H01L51/46H01L51/48
CPCC07C251/22C07D251/24H10K71/15H10K85/631H10K85/654H10K85/791
Inventor 李远周佳文曾苗黄飞曹镛
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com