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Novel multilayer structure with low electric leakage

A multi-layer structure, low technology, applied in the direction of electrical components, static memory, instruments, etc., can solve the problems of reducing the effective electric field strength, large thickness of the transition layer, etc., and achieve the effect of small leakage current and small leakage characteristics

Pending Publication Date: 2019-09-24
SHANDONG JIANZHU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The mismatch between the transition layer selected in the existing research on building a multilayer structure and the prepared thin film sample is very small, and the thickness of the transition layer is relatively large when building a multilayer structure, which will reduce the pressure applied on BiFeO. 3 The effective electric field strength on the base film

Method used

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  • Novel multilayer structure with low electric leakage
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  • Novel multilayer structure with low electric leakage

Examples

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Effect test

Embodiment example 1

[0033] (1) In the novel multilayer structure with lower leakage current for ferroelectric memory devices described in the present invention, Sr2 Bi 4 Ti 5 o 18 The preparation process of the transition layer and thin film layer precursor solution uses bismuth nitrate, strontium acetate, ethylene glycol, acetylacetone, and tetrabutyl titanate as raw materials, and is synthesized by a sol-gel method. The specific steps are as follows: Butyl ester and acetylacetone were prepared in a volume ratio of 1:1 to prepare solution A: tetrabutyl titanate acetylacetone was slowly dropped into the acetylacetone solution, and the mixed solution was stirred for 24 hours to obtain a clear yellow-brown transparent Solution A: Weigh 1.2g strontium acetate, 5.9g bismuth nitrate, and 18.8ml ethylene glycol, mix the three fully, place them on a multi-head magnetic stirrer and stir for 24 hours to obtain a transparent B solution; slowly add B solution into the A solution, and the mixed solution wa...

Embodiment example 2

[0037] (1) In the novel multilayer structure with lower leakage current for ferroelectric memory devices described in the present invention, Sr 2 Bi 4 Ti 5 o 18 The preparation process of the transition layer and thin film layer precursor solution uses bismuth nitrate, strontium acetate, ethylene glycol, acetylacetone, and tetrabutyl titanate as raw materials, and is synthesized by a sol-gel method. The specific steps are as follows: Butyl ester and acetylacetone were prepared in a volume ratio of 1:1 to prepare solution A: tetrabutyl titanate acetylacetone was slowly dropped into the acetylacetone solution, and the mixed solution was stirred for 24 hours to obtain a clear yellow-brown transparent Solution A: Weigh 1.2g strontium acetate, 5.9g bismuth nitrate, and 18.8ml ethylene glycol, mix the three fully, place them on a multi-head magnetic stirrer and stir for 24 hours to obtain a transparent B solution; slowly add B solution into the A solution, and the mixed solution ...

Embodiment example 3

[0041] (1) In the novel multilayer structure with lower leakage current for ferroelectric memory devices described in the present invention, Sr 2 Bi 4 Ti 5 o 18 The preparation process of the transition layer and thin film layer precursor solution uses bismuth nitrate, strontium acetate, ethylene glycol, acetylacetone, and tetrabutyl titanate as raw materials, and is synthesized by a sol-gel method. The specific steps are as follows: Butyl ester and acetylacetone were prepared in a volume ratio of 1:1 to prepare solution A: tetrabutyl titanate acetylacetone was slowly dropped into the acetylacetone solution, and the mixed solution was stirred for 24 hours to obtain a clear yellow-brown transparent Solution A: Weigh 1.2g strontium acetate, 5.9g bismuth nitrate, and 18.8ml ethylene glycol, mix the three fully, place them on a multi-head magnetic stirrer and stir for 24 hours to obtain a transparent B solution; slowly add B solution into the A solution, and the mixed solution ...

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Abstract

The invention achieves the purpose of reducing the leakage current of a film by constructing a transition layer of a multilayer structure. The base layer of the constructed multilayer structure adopts a Pt sheet, the material of a transition layer is Sr2Bi4Ti5O18, and the material is a film layer is BiFeO3 and Sr2Bi4Ti5O18. On the one hand, the material of Sr2Bi4Ti5O18 has a characteristic of small electric leakage, and the movement of carriers between a BiFeO3 film and a Pt electrode after the formation of the multilayer structure, thereby being smaller in leakage current than that of a BiFeO3 film directly deposited on ITO; and on the other hand, the special contact state at an interface of Sr2Bi4Ti5O18 and BiFeO3 also restrains the movement of carriers of the film, thereby being smaller in leakage current than the BiFeO3 directly deposited on ITO.

Description

technical field [0001] The invention belongs to the technical field of electronic ceramics, and in particular relates to a novel multilayer structure with lower leakage current for ferroelectric storage devices and a preparation method thereof. Background technique [0002] BiFeO 3 It is a single-phase multiferroic material integrating ferroelectricity and ferromagnetism. It has ferroelectric order and antiferromagnetic order at room temperature, and there is a coupling effect between ferroelectricity and ferromagnetism. BiFeO 3 The theoretical remnant polarization strength is very high, and the crystallization temperature is low, which makes BiFeO 3 It has great application value in multi-functional devices such as high-temperature information storage, sensors and micro-electromechanical systems. [0003] Pure phase BiFeO 3 The thin film preparation temperature range is very narrow, and the Bi 2 o 3 、 Bi 2 Fe 4 o 9 and other impurity phases, while the Bi element at...

Claims

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Application Information

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IPC IPC(8): H01L45/00G11C11/22
CPCG11C11/22H10N70/20H10N70/8836
Inventor 张丰庆郭晓东赵雪峰范素华
Owner SHANDONG JIANZHU UNIV
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