Normally-off GaO FET structure

Abstract

The invention provides a normally-off gallium oxide field effect transistor structure, belonging to the technical field of semiconductor devices, comprising a substrate layer and an n-type doped gallium oxide channel layer from bottom to top, the n-type doped gallium oxide channel layer A source, a drain, and a gate are arranged on it, and the gate is located between the source and the drain, and the n-type doped gallium oxide channel layer below the gate is provided with no electron channel region. The normally-off gallium oxide field effect transistor structure provided by the present invention does not need to prepare a groove under the gate, but forms an electron-free channel region through high-temperature oxidation, and forms a gate on the electron-free channel region, avoiding etching damage And the problem of uncontrollable etching depth increases the saturation current and breakdown voltage.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and more specifically relates to a normally-off gallium oxide field effect transistor structure. Background technique [0002] Due to the lack of effective P-type doping and implantation technology, normally-off gallium oxide field effect transistors are usually realized by deep groove technology under the gate, and the groove is generally realized by dry etching. Utilize the deep groove technology under the gate to realize the normally-off gallium oxide field effect transistor device, the etching depth is uncontrollable, and the threshold value is unstable; gallium oxide has strong etching resistance, and dry etching will cause the surface of the groove under the gate Roughness and unevenness will lead to a peak electric field in the area under the gate when the device is working, which will affect the breakdown characteristics of the device. At the same time, etching will introduc...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a normally-off gallium oxide field-effect transistor structure to solve the problems of uncontrollable etching depth, etching damage, rough surface, unstable threshold value, serious Technical issues affecting saturation current and breakdown voltage

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