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Manufacturing method of schottky diode compatible with cmos process

A technology of Schottky diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as large leakage current and poor performance of Schottky diodes, and achieve reduced leakage, low leakage characteristics, Effect of reducing lattice damage

Active Publication Date: 2017-12-05
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If the metal silicide formation method in the existing CMOS process is directly used to manufacture Schottky diodes, the performance of Schottky diodes is often poor and has a large leakage current

Method used

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  • Manufacturing method of schottky diode compatible with cmos process
  • Manufacturing method of schottky diode compatible with cmos process
  • Manufacturing method of schottky diode compatible with cmos process

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Embodiment Construction

[0027] like figure 1 Shown is the flow chart of the method of the embodiment of the present invention; figure 2 Shown is the structural diagram of the Schottky diode formed by the method of the embodiment of the present invention; the manufacturing method of the Schottky diode compatible with the CMOS process of the embodiment of the present invention includes the following steps:

[0028] Step 1: Forming an N-type silicon epitaxial layer 2 on the silicon substrate 1, the doping concentration of the N-type silicon epitaxial layer 2 meeting the conditions for being a semiconductor pole of a Schottky diode.

[0029] Since the CMOS device and the Schottky diode are manufactured together in the method of the embodiment of the present invention, a step of forming a P-type buried layer 3 and an N-type buried layer 4 on the silicon substrate 1 is also included. The P-type buried layer 3 and the N-type buried layer 4 are located at the bottom of the N-type silicon epitaxial layer 2 ...

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Abstract

The invention discloses a Schottky diode production method compatible with a CMOS (complementary metal oxide semiconductors) process. The Schottky diode production method includes forming an N-type silicon epitaxy layer on a silicon substrate; employing photolithographic technique to select an area forming a metal electrode of the Schottky diode; performing silicon implantation to subject the N-type silicon epitaxy layer of the forming area of the metal electrode to decrystallization; employing high-temperature titanium sputtering technique to form a titanium layer on the forming area of the metal electrode; subjecting the titanium layer to a first rapid thermal annealing and forming titanium silicon in C-49 phase; performing a second rapid thermal annealing to transfer the titanium silicon into C-54 phase. The Schottky diode production method has the advantages that leakage current of the device is decreased, device performance is improved, and compatibility with the CMOS process is achieved.

Description

technical field [0001] The invention relates to a manufacturing process method of a semiconductor integrated circuit, in particular to a manufacturing method of a Schottky diode compatible with a CMOS process. Background technique [0002] Schottky diodes are formed by contacting metal and N-type semiconductor layers. They have the characteristics of short reverse recovery time and low forward conduction voltage, and are widely used in semiconductor integrated circuits. In the existing CMOS process, in order to reduce the contact resistance of the polysilicon gate or the source-drain region, metal silicide is often formed on the surface of the polysilicon gate or the source-drain region. If the method of forming metal silicide in the existing CMOS process is directly used to manufacture the Schottky diode, the performance of the Schottky diode is often poor and has a large leakage current. Contents of the invention [0003] The technical problem to be solved by the presen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L21/28H01L29/872
CPCH01L29/66143H01L29/872
Inventor 李亮
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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