A method for on-line state monitoring of igbt module bonding wires

A technology for bonding wires and power modules, which is applied in the fields of power electronics and electronic information science, and can solve the problems of IGBTs that do not consider changes in working conditions, low accuracy, and no description of the measurement of the collector-emitter voltage drop of IGBT modules.

Active Publication Date: 2020-07-17
HEFEI UNIV OF TECH
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] The patent application document with the application number 201410072990.X and the publication number 104880657A discloses a fault detection method for IGBT devices and the corresponding detection circuit. Comparators corresponding to the number of bonding wires are set up, and the gate voltage signal is used to judge the fault of the IGBT. The number of bonding wires falling off, but the detection circuit is more complicated and the accuracy is not high
The patent application document with the application number 201710318198.1 and the publication number 107621782A discloses a fault diagnosis method for an IGBT module. By measuring the collector-emitter voltage drop value of the IGBT module in real time, the least squares support vector machine model with quantum ant colony optimization is used. Diagnoses the health status of the IGBT module, but does not consider the impact of changes in working conditions on the IGBT, and does not explain how to measure the collector-emitter voltage drop of the IGBT module

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  • A method for on-line state monitoring of igbt module bonding wires
  • A method for on-line state monitoring of igbt module bonding wires
  • A method for on-line state monitoring of igbt module bonding wires

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Embodiment Construction

[0053] The present invention will be further described below in combination with specific embodiments and accompanying drawings.

[0054] In this embodiment, the SKM50GB12T4 power module of the SEMKRON series is used for experimental verification, and six bonding wires are used to connect the chip and the substrate in parallel.

[0055] like figure 1 As shown, the present invention provides a method for online state monitoring of IGBT module bonding wires, as follows image 3 The shown full-bridge inverter circuit is taken as an example to introduce the implementation process of this method in detail. The specific implementation steps are as follows:

[0056] Step 1. Build the full-bridge inverter circuit and V CE In-line measurement circuit, the V CE The two input terminals of the online measurement circuit are connected to the collector and emitter of the IGBT power module of the full-bridge inverter circuit to realize the connection between the full-bridge inverter circu...

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Abstract

A method for the online state monitoring of the IGBT module key line, including the following steps: Step 1: Create a full bridge inverter circuit and V CE Online measuring circuit, v CE The two input terminals of the online measuring circuit are connected to the IGBT power module of the IGBT power module of the whole bridge inverter circuit to achieve the whole bridge inverter circuit and V CE Online measurement circuit connection; step 2: establish a three -dimensional data model of healthy IGBT; step 3: Create the IGBT 3D data model of the key line break;The minimum daily support vector machine evaluates the status of the three -dimensional data model obtained by Step 2 and Step 3.The invention will be closely related to online monitoring and status assessment, which will help improve the health management mechanism of the IGBT module key line.

Description

technical field [0001] The invention relates to the fields of power electronics and electronic information science, in particular to a method for online state monitoring of IGBT module bonding wires, which utilizes a genetic algorithm to optimize the least squares support vector machine to evaluate the health of the IGBT bonding wires. Background technique [0002] Power converters are widely used in the fields of smart grid, rail transit and new energy, and the insulated gate bipolar transistor (IGBT) is the core device of the power converter, and its reliability is the guarantee for the safe operation of the system. Therefore, the IGBT On-line monitoring and status assessment are extremely important. Solder layer fatigue and bond wire detachment are the two main failure modes of IGBTs. Due to the continuous improvement of solder layer technology, IGBT module bond wire failure has received extensive attention. [0003] The patent application document with the application n...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26G06N3/12H02M7/5387
CPCG01R31/2601G01R31/2642G06N3/126H02M7/5387H01L2224/73265H01L2224/48091H01L24/48H01L2924/13055H01L2924/00014H01L2224/48227G01R31/66G01R31/2608H01L2224/32225H01L2924/00012H01L2224/45099G01R19/10H01L2224/48225
Inventor 何怡刚李凯伟何鎏璐李志刚
Owner HEFEI UNIV OF TECH
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