Red light semiconductor laser based on GexSi<1-x> variable lattice constant matrix

Abstract

The invention discloses a red light semiconductor laser based on a GexSi<1-x> variable lattice constant matrix. The laser structurally comprises an N-surface electrode, a germanium substrate, a strainbuffer layer, a germanium-silicon matrix layer, a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well, a quantum barrier, an upper waveguide layer, an upper limiting layer,a barrier layer, a dielectric film, an ohmic contact layer and a P-surface electrode in sequence from bottom to top. According to the red-light semiconductor laser, the tension strain of the quantum well is reduced while the active region lasing wavelength is shortened, the problem that the active region with large tension strain has many defects in an ultra-short wavelength red-light laser can besolved, and meanwhile, the output power and the photoelectric conversion efficiency of a band laser are also improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to a Ge-based x Si 1-x Red semiconductor laser with variable lattice constant matrix. Background technique [0002] Red light semiconductor lasers are widely used in laser storage, laser display, virtual reality, laser medical beauty and other fields, but the red light lasers studied before are mainly concentrated in the 655nm-680nm band. The demand for shorter-wavelength red lasers continues to increase, and the development of 638nm-642nm short-wavelength red light, and even 620nm-635nm ultra-short-wavelength red semiconductor lasers has once again become one of the hot spots in the field of semiconductor optoelectronics. [0003] Laser display has superior picture quality and frame advantages, and also has the advantages of rich colors, high color saturation, long life, low power consumption, energy saving and environmental protection, and light weight. The advanta...

AI Technical Summary

Problems solved by technology

However, due to the narrow conduction band offset between the tensile strain GaInP and AlGaInP heterojunctions, the electrons in the active layer overflow to the confinement layer, making it difficult to work at high power and high temperature of the laser; the tensile strain GaInP material is more durable than the compressive strain material More crystal defects make the generation and migration of internal defects more complicated; the excess heat generated by low photoelectric conversion efficiency will rapidly degrade the photoelectric characteristics of the device, making it difficult to achieve continuous high-power output at high temperatures; high photon energy makes The laser cavity surface bears a higher energy density, and the optical catastrophe damage of the cavity surface of the device is more likely to occur

Although the production of 625nm and 630nm semiconductor lasers has been realized experimentally, the device characteristics are too poor, the light attenuation is too much, and the cost performance, output power and conversion efficiency are difficult to meet the requirements of the current laser display technology and red light medical care applications for shorter wavelength red lasers. Optical Laser Requirements

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