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Titanium monoxide semiconductor ceramic and preparation method thereof

A technology for preparing titanium monoxide and ceramics, which is applied in the field of semiconductors, can solve problems such as difficulty in preparing titanium monoxide, difficulty in synthesizing titanium monoxide, and slow temperature rise and fall, so as to reduce production costs and energy consumption, and reduce equipment costs. Ingredient stabilization effect

Active Publication Date: 2019-08-23
HUBEI UNIV OF EDUCATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the preparation of titanium monoxide is relatively difficult, because the reaction temperature is high. When the temperature is 700-800K, even if the oxygen partial pressure is controlled, its composition will still be very unstable.
In addition, the heating and cooling process of traditional ceramic technology is relatively slow, so it is difficult to synthesize titanium monoxide

Method used

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  • Titanium monoxide semiconductor ceramic and preparation method thereof
  • Titanium monoxide semiconductor ceramic and preparation method thereof
  • Titanium monoxide semiconductor ceramic and preparation method thereof

Examples

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Embodiment 1

[0028] This embodiment provides a method for preparing a titanium monoxide semiconductor ceramic, the method comprising the following steps:

[0029] S1, take 0.03mol tetrabutyl titanate and 0.03*1.5mol citric acid hydrate according to stoichiometric ratio, dissolve citric acid hydrate in 20mL deionized water to obtain citric acid aqueous solution, and then disperse tetrabutyl titanate under ultrasonic dispersion The ester was dissolved in aqueous citric acid to obtain a mixed solution.

[0030] S2, constantly stirring the mixed solution, and adding ammonia water to the mixed solution to adjust the pH to 5 to form a sol, adding 10 mL of ethylene glycol as a combustion aid to the sol, and aging at 15°C for 24 hours , the aged sol was placed in a water bath at 100°C for a chemical reaction for 1 hour to obtain a wet gel.

[0031] S3, drying the wet gel in an oven at 180° C. for 2 hours to volatilize the organic solvent to obtain a xerogel, and grind the xerogel in air to obtain...

Embodiment 2

[0035] This embodiment provides a method for preparing a titanium monoxide semiconductor ceramic, the method comprising the following steps:

[0036] S1, take 0.03mol tetrabutyl titanate and 0.03*1.5mol citric acid hydrate according to stoichiometric ratio, dissolve citric acid hydrate in 20mL deionized water to obtain citric acid aqueous solution, and then disperse tetrabutyl titanate under ultrasonic dispersion The ester was dissolved in aqueous citric acid to obtain a mixed solution.

[0037] S2, constantly stirring the mixed solution, and adding ammonia water to the mixed solution to adjust the pH to 5.5 to form a sol, adding 10 mL of ethylene glycol as a combustion aid to the sol, and aging at 20°C for 24 hours , the aged sol was placed in a water bath at 100° C. for a chemical reaction with a reaction time of 1.5 h to obtain a wet gel.

[0038] S3, drying the wet gel in an oven at 180° C. for 3 hours to volatilize the organic solvent to obtain a dry gel, and grind the d...

Embodiment 3

[0041] This embodiment provides a method for preparing a titanium monoxide semiconductor ceramic, the method comprising the following steps:

[0042] S1, take 0.03mol tetrabutyl titanate and 0.03*1.5mol citric acid hydrate according to stoichiometric ratio, dissolve citric acid hydrate in 20mL deionized water to obtain citric acid aqueous solution, and then disperse tetrabutyl titanate under ultrasonic dispersion The ester was dissolved in aqueous citric acid to obtain a mixed solution.

[0043] S2, constantly stirring the mixed solution, and adding ammonia water to the mixed solution to adjust the pH to 6 to form a sol, adding 10 mL of ethylene glycol as a combustion aid to the sol, and aging for 24 hours at 25° C. , the aged sol was placed in a water bath at 100°C for a chemical reaction, the reaction time was 2h, and a wet gel was obtained.

[0044] S3, drying the wet gel in an oven at 180° C. for 4 hours to volatilize the organic solvent to obtain a xerogel, and grind the...

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Abstract

The invention relates to a titanium monoxide semiconductor ceramic and a preparation method thereof. The preparation method comprises the following steps: dissolving tetrabutyl titanate into a citricacid solution so as to obtain a mixed solution; adjusting the pH value of the mixed solution to form sol, putting a combustion improver into the sol, aging at the room temperature, and carrying out achemical reaction on the aged sol in a water bath pot so as to obtain wet gel; drying the wet gel in a drying oven so as to obtain dry gel, grinding the dry gel so as to obtain first powder, sinteringthe first powder in a muffle furnace, grinding the sintered first powder so as to obtain second powder, and pressing the second powder into round sheets by using a powder pressing machine; and scanning the round sheets with laser, and carrying out sintering, thereby obtaining the titanium monoxide semiconductor ceramic, wherein argon is used as a reaction protection gas in the scanning process. By adopting the technical scheme of the invention, the production cost and the energy consumption of the titanium monoxide semiconductor ceramic can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a titanium monoxide semiconductor ceramic and a preparation method thereof. Background technique [0002] Titanium monoxide (TiO) is a non-stoichiometric compound, generally containing 52%-54% (atoms) of oxygen, containing 15% of structural vacancies, equivalent to a titanium dioxide (TiO 2 ) as the base impurity semiconductor, which has strong acid and alkali corrosion resistance and high hardness, and compared with titanium dioxide which is in an insulating state at room temperature, titanium monoxide has good electrical conductivity. [0003] At present, the preparation of titanium monoxide is relatively difficult because the reaction temperature is relatively high. When the temperature is 700-800K, even if the oxygen partial pressure is controlled, its composition will still be very unstable. In addition, the heating and cooling process of traditional ceramic technolo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/46C04B35/624
CPCC04B35/46C04B35/624
Inventor 汪川惠肖龙胜贺欣欣罗博伟
Owner HUBEI UNIV OF EDUCATION
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