High-numerical-precision quantum tunneling device simulation method

Abstract

The invention discloses a high numerical precision quantum tunneling device simulation method. Grid optimization and partial differential equation set solution for different objects are carried out alternately. Grid optimization is divided into a general grid optimization process and a tunneling grid optimization process, and the numerical calculation precision of the non-local quantum tunneling association item is improved. The specific idea is that according to an energy band curvature, a lattice temperature curvature and a built-in electric field distribution condition in the quantum tunneling device, appropriate different grid discrete control standards and control functions are selected; grid reforming is carried out in different areas in sequence; the numerical values of the energy band region and the lattice temperature region are redistributed, and the grid distribution of the quantum tunneling region is redistributed, so that the grid distribution can fully ensure the numerical accuracy of charge distribution, carrier transport and lattice temperature distribution, and the numerical accuracy of the quantum tunneling probability between the energy bands and between the energy bands and the deep energy level defects can be greatly improved.

Description

technical field [0001] The invention relates to a high numerical precision quantum tunneling device simulation method. [0002] technical background [0003] As a polarity switching and fast switching device, quantum tunneling diodes are widely used in solid-state semiconductor integrated circuit devices represented by multi-junction solar cells (MJSC) and tunneling field-effect diodes (TFETs). increasingly widespread attention. The numerical analysis of quantum tunneling mainly includes localized and nonlocalized two types. The current comprehensive experimental results suggest that the nonlocalized model can more accurately reflect some basic characteristics of tunneling diodes. The basic mechanisms of nonlocal quantum tunneling are mainly divided into two types: 1) direct band-to-band quantum tunneling (BTB) between conduction band electrons at different spatial positions and valence band equal-energy holes; 2) Defect state-to-band quantum tunneling (DTB) between electro...

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Problems solved by technology

[0019] Equation (7) is a physical model widely used in current commercial software. However, for a tunnel junction composed of compound heterogeneous materials, the band-edge state densities of the materials on both sides are not equal, the spatial electric field distribution is non-uniform, and the distribution functions are definitely different. Therefore, the approximation method in (7) cannot accurately reflect the complex effects caused by the non-uniform distribution of the electric field in space and the difference in the distribution function.

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