Cuprous oxide-zinc oxide heterojunction solar cell and preparation method thereof

Abstract

The invention discloses a cuprous oxide-zinc oxide heterojunction solar cell and a preparation method thereof. Corning glass is used as a substrate, metal titanium is grown by a magnetron sputtering method, and then a silver electrode is sputtered on a titanium thin film; a nitrogen-doped Cu2O thin film is grown by using a reactive magnetron sputtering method; a microcrystalline silicon oxide thinfilm is grown on the surface of the nitrogen-doped Cu2O thin films by using an isotopic chemical vapor deposition method; a Al-doped ZnO thin film is grown by using the magnetron sputtering method; and a layer of Ag electrode is deposited on the ZnO thin film by using the magnetron sputtering method through a mask plate. The amorphous silicon oxide in microcrystalline silicon oxide is applied topassivate CuO deep level defect on the Cu2O surface, the doped silicon nanocrystals transport photogenerated carriers, and the hydrogen introduced in the growth process is diffused into Cu2O at subsequent annealing temperatures so as to reduce the defect density and improve the efficiency of the Cu2O solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a cuprous oxide-zinc oxide heterojunction solar cell and a preparation method thereof. Background technique [0002] Three oxides can be formed when copper is oxidized: cuprous oxide (Cu 2 O), copper oxide (CuO) and Cu 4 o 3 , these three forms of copper oxides are all semiconductors, where Cu 2 The photovoltaic effect of O is the most significant and the first to be discovered and applied, metal / Cu 2 The Schottky junction formed by O was widely used in solar cells and rectifiers in the early 20th century. Due to the presence of Cu vacancies and other defects, undoped Cu 2 O material is a typical p-type oxide semiconductor. Cu 2 O is a direct bandgap semiconductor with an absorption coefficient of 10 5 cm -1 , the bandgap width is related to the film deposition conditions, generally 1.7-2.0eV. Cu 2 The theoretical photoelectric conversion efficiency of O solar cell...

AI Technical Summary

Problems solved by technology

In 2015, Minami et al. used NaI to anneal at a temperature of 500-1000 °C and an inert gas atmosphere to treat Cu 2 O was doped with sodium, and its resistivity was significantly reduced to 15Ω.cm, but compared with other dopants, the Hall mobility did not decrease while reducing the resistivity

However, the film area grown by laser pulse deposition method is very small (generally less than 1cm 2 ), the uniformity of growing large-area thin films is difficult to achieve. In addition, the cost of laser pulse deposition in industrial mass production is relatively high

[0007] Cu 2 The efficiency of O heterojunction solar cells is still relatively low, mainly due to the Cu 2 The interface between O and n-type oxides has CuO with deep-level defect states, resulting in a high interface state defect density, so how to reduce interface defects is to improve the CuO 2 The key to O heterojunction cells

Images