A quantum anomalous Hall effect thin film microstructure device and its preparation method

An abnormal Hall effect and microstructure technology, applied in the field of electronic information, can solve the problems of compound film material damage, difficulty in developing time control, etc., and achieve the effect of avoiding corrosion

Active Publication Date: 2020-12-01
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thanks Al 2 o 3 The thickness is about 2nm, which requires the development time to be very precise. Once over-developed, the NaOH developer will dope Cr (Bi, Sb) 2 Te 3 Compound thin film materials cause damage, therefore, it is very difficult to control the development time

Method used

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  • A quantum anomalous Hall effect thin film microstructure device and its preparation method
  • A quantum anomalous Hall effect thin film microstructure device and its preparation method
  • A quantum anomalous Hall effect thin film microstructure device and its preparation method

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preparation example Construction

[0046] A method for preparing a quantum anomalous Hall effect thin film microstructure device, the specific steps are as follows:

[0047] 1) Evenly coated protective layer: Al in topological insulator material 1 2 o 3 Layer 103 is evenly coated with electron beam glue as the protective layer 201; the electron beam glue is PMMA electron beam glue with a thickness of 100-120nm; last for 50-60s; if figure 2 shown;

[0048] 2) Uniform coating of UV photoresist: Uniform coating of UV positive photoresist 301 on the protective layer 201; the thickness of the UV positive photoresist is 800-900nm, and the uniform coating process conditions are: the speed is 600r / min for 6 -8s, at 4000r / min for 50-60s, harden the photoresist film layer on the rubber baking table, set the temperature at 85-90°C, and the time is 260-300s; image 3 shown;

[0049] 3) Single-layer photolithography: transfer the pattern of the mask to the UV positive photoresist 301 by photolithography process; the e...

Embodiment 1

[0062] A method for preparing a quantum anomalous Hall effect thin film microstructure device, the specific steps are as follows:

[0063] 1) Evenly coated protective layer: Al in topological insulator material 1 2 o 3 Layer 103 is uniformly coated with electron beam glue as the protective layer 201; the electron beam glue is PMMA electron beam glue with a thickness of 100nm; the process conditions for uniform glue are: 600r / min at a speed of 600r / min for 6s, and 4000r / min for 50s;

[0064] 2) Uniform coating of UV photoresist: uniform coating of UV positive photoresist 301 on the protective layer 201; the thickness of the UV positive photoresist is 800nm, and the uniform coating process conditions are: 600r / min at a speed of 6s, 4000r Continue for 50s at the rotation speed of / min, and harden the photoresist film layer on the rubber baking table, set the temperature at 85°C, and the time is 260s;

[0065] 3) Single-layer photolithography: transfer the pattern of the mask to...

Embodiment 2

[0070] A method for preparing a quantum anomalous Hall effect thin film microstructure device, the specific steps are as follows:

[0071] 1) Evenly coated protective layer: Al in topological insulator material 1 2 o 3 Layer 103 is evenly coated with electron beam glue as the protective layer 201; the electron beam glue is PMMA electron beam glue with a thickness of 105nm; the process conditions for uniform glue are: the speed of 600r / min lasts for 7s, and the speed of 4000r / min lasts for 52s;

[0072] 2) Uniform coating of UV photoresist: uniform coating of UV positive photoresist 301 on the protective layer 201; the thickness of the UV positive photoresist is 820nm, and the uniform coating process conditions are: 600r / min for 7s, 4000r Continue for 52s at the speed of / min, and harden the photoresist film layer on the rubber baking table, set the temperature at 86°C, and the time is 270s;

[0073] 3) Single-layer photolithography: transfer the pattern of the mask to the UV...

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Abstract

The invention discloses a method for preparing a quantum anomalous Hall effect thin film microstructure device. The specific steps are as follows: 2 o 3 Evenly coat electron beam glue on the layer as a protective layer; evenly coat UV positive photoresist on the protective layer; use photolithography to transfer the pattern of the mask to the UV positive photoresist; use a plasma remover to remove the photoresist The protective layer of etching pattern; use ion beam etching machine to etch Al on topological insulator material 2 o 3 layer and Cr doping (Bi,Sb) 2 Te 3 Layer, transfer the pattern of the mask to the topological insulator material; use acetone and isopropanol to wash off the remaining protective layer and UV positive photoresist, and dry to obtain a quantum anomalous Hall effect thin film microstructure device. The present invention avoids Al 2 o 3 The corrosion of the thin film avoids the problem that the quantum anomalous Hall effect caused by the accumulation of electron beam exposure cannot be controlled, and the quantum anomalous Hall effect after micro-nano processing is successfully realized.

Description

technical field [0001] The invention belongs to the technical field of electronic information, and in particular relates to a quantum anomalous Hall effect thin film microstructure device and a preparation method thereof. Background technique [0002] Since Moore's Law was put forward in the 1960s, semiconductor chip technology has developed rapidly, and the degree of integration has become higher and higher. However, as the integration of circuits becomes higher and higher, the heat generated by electronic components will also become higher and higher. If there is no technical condition for good heat dissipation, this heat can burn the entire chip. Therefore, many people think that "Moore's Law" will fail. [0003] The heating of the chip is caused by electrons. On the bottom layer of the chip, under a certain potential, the current flows in a certain direction. The basic unit of the current is electrons, and electrons move in a certain direction in high-probability events...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/06H01L43/10H01L43/14
CPCH10N52/101H10N52/01H10N50/85
Inventor 高志廷李耀鑫王永超李绍锐张金松王亚愚
Owner TSINGHUA UNIV
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