Gallium oxide field effect transistor using stannous oxide to adjust threshold voltage and preparation method

Abstract

The invention discloses a gallium oxide field effect transistor using stannous oxide to adjust a threshold voltage. The gallium oxide field effect transistor comprises a substrate, a gate electrode, asource electrode and a drain electrode; a bottom gate dielectric layer is arranged on the upper surface of the substrate; a gallium oxide channel layer is arranged on the bottom gate dielectric layer, and the gallium oxide channel layer is made of N-type doped gallium oxide; and a stannous oxide layer is arranged on the gallium oxide channel layer between the source electrode and the drain electrode. The preparation method of the field effect transistor comprises the following steps that a) the substrate is cleaned; b) a gallium oxide thin film is prepared; c) a transfer object is removed; d)the source electrode and the drain electrode are prepared; e) the stannous oxide layer is prepared; and f) annealing treatment is carried out. The method aims to solve the problem that an existing gallium oxide transistor can be turned off only by a very high negative voltage, and provides a method and a process for adjusting the threshold voltage of the n-type gallium oxide field effect transistor by utilizing p-type stannous oxide, so that the threshold voltage of the transistor can be regulated, the threshold voltage of the device can be obviously improved, and the utilization value of thedevice can be improved.

Description

technical field [0001] The invention relates to a gallium oxide field-effect transistor and a preparation method thereof, and more specifically relates to a gallium oxide field-effect transistor and a preparation method thereof which use stannous oxide to adjust threshold voltage, and belongs to the technical field of semiconductor devices. Background technique [0002] Gallium oxide is a new type of fourth-generation direct bandgap wide-bandgap semiconductor. Compared with the third-generation semiconductor, it has outstanding advantages such as larger bandgap width, shorter absorption cut-off edge, and lower growth cost. It has become a power One of the preferred materials for devices and deep ultraviolet optoelectronic devices. However, conventional gallium oxide field effect transistors have a high threshold voltage and are depletion-mode transistors that require a large negative voltage to turn off. [0003] Gallium oxide thin films can be grown by chemical vapor depos...

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Problems solved by technology

[0006] Aiming at the problem that the uncertainty of the thickness of the stripped gallium oxide film leads to a large threshold voltage of the field effect transistor, and the device needs a large negative voltage to turn off the problem, we use the stripping method to obtain a high-quality gallium oxide film to prepare a field effect transistor, and use p-type SnO and n-type gallium oxide form a p-n junction to adjust the threshold voltage of gallium oxide field effect transistors, realizing a large positive shift of the threshold voltage, and further meeting its practical application requirements in power devices

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