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Three-layer dielectric passivation film PERC solar cell and manufacturing process

A technology of solar cells and passivation films, applied in the field of solar photovoltaic power generation, can solve the problems of poor passivation effect of PERC cells, increase the short-circuit current and open-circuit voltage of the battery, etc., so as to enhance the comprehensive utilization rate, increase the short-circuit current and open-circuit voltage, etc. , the effect of good density

Pending Publication Date: 2019-07-09
TONGWEI SOLAR ENERGY CHENGDU CO LID
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a three-layer dielectric passivation film PERC solar cell and its manufacturing process in order to solve the problem of poor passivation effect of PERC cells in the prior art. The PERC cell structure adopts three layers of dielectric passivation Film deposition can effectively enhance passivation and the comprehensive utilization of incident light, increase the short-circuit current and open-circuit voltage of the battery, and at the same time improve the anti-light decay and anti-PID stability and reliability performance of the structural battery

Method used

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  • Three-layer dielectric passivation film PERC solar cell and manufacturing process

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Embodiment 1

[0060] The present invention comprises the following concrete steps:

[0061] (1) Remove the mechanical damage layer 4um on the surface of the single crystal p-type silicon wafer with a NaOH solution with a concentration of 40g / L, clean the surface of the silicon wafer, and simultaneously etch the surface of the silicon wafer anisotropically with 18g / L of NaOH liquid, Form 2~3um inverted pyramid suede texture;

[0062] (2) Using POCl 3 The negative pressure of the liquid source diffuses the silicon wafer cleaned in step (1) in the diffusion furnace tube to form a P-N junction. The diffusion temperature is 830°C, the process time is 55 minutes, and the diffusion sheet resistance is controlled at 130-150Ω / □;

[0063] (3) Laser SE doping: On the silicon wafer diffused in step (2), the phosphorous atoms on the diffused surface phosphosilicate glass are laser doped in the subsequent screen-printed main grid and fine grid electrode regions by laser. The area of ​​this area account...

Embodiment 2

[0076] The present invention comprises the following concrete steps:

[0077] (1) Use a NaOH solution with a concentration of 30g / L to remove the 3.5um mechanical damage layer on the surface of the single crystal p-type silicon wafer, clean the surface of the silicon wafer, and at the same time use 20g / L NaOH liquid to anisotropize the surface of the silicon wafer Corrosion, forming 3~4um inverted pyramid suede texture;

[0078] (2) Using POCl 3 The liquid source negative pressure diffuses the silicon wafer cleaned in step (1) in the diffusion furnace tube to form a P-N junction, the diffusion temperature: 850°C, the process time: 45min, and the diffusion sheet resistance is controlled at 140-170Ω / □;

[0079] (3) Laser SE doping: On the silicon wafer diffused in step (2), the phosphorous atoms on the diffused surface phosphosilicate glass are laser doped in the subsequent screen-printed main grid and fine grid electrode regions by laser. The area of ​​this area accounts for ...

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Abstract

The invention discloses a three-layer dielectric passivation film PERC solar cell and the manufacturing process, belongs to the technical field of solar photovoltaic power generation and aims to provides the three-layer dielectric passivation film PERC solar cell. The manufacturing process comprises steps of (1), pre-cleaning and texturing a silicon wafer; (2), preparing a PN junction on the surface of a silicon substrate through diffusion; (3), laser doping; (4), etching and backside polishing; (5), oxidation annealing and growth of SiO2; (6), double-sided alumina precipitation; (7), back andfront silicon nitride precipitation; (8), laser grooving; (9), screen printing; (10), sintering; (11), LID light decaying; and (12), I V testing. The manufacturing process is advantaged in that the comprehensive absorption utilization rate of the incident light of the silicon wafer surface and a bulk can be effectively enhanced, the battery's short-circuit current and the open circuit voltage canbe enhanced, and the anti-light decay and anti-PID stability and reliability performance of the structural battery are improved.

Description

technical field [0001] The invention belongs to the technical field of solar photovoltaic power generation, and in particular relates to a three-layer dielectric passivation film PERC solar cell and a manufacturing process. Background technique [0002] With the continuous development and maturity of the solar photovoltaic power generation industry, its advantages are constantly emerging in the new round of clean energy competition, such as wide application areas, rich sources of raw materials, safe and reliable, not affected by energy crises and capital fuel markets, and the degree of industrialization and intelligence. Gradually upgrade, the construction period of the power generation system is short and there is less waste. Clean and sustainable photovoltaic power generation products have become an important part of the future development of new energy. Traditional BSF solar cells, the preparation process is as follows figure 1 As shown, after more than 10 years of indu...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/054H01L31/068H01L31/18
CPCH01L31/02167H01L31/0682H01L31/1804H01L31/1868H01L31/02168H01L31/0547Y02E10/547Y02E10/52Y02P70/50
Inventor 张忠文王岚苏荣谢毅杨蕾张鹏
Owner TONGWEI SOLAR ENERGY CHENGDU CO LID
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