Movable magnetic field arc ion plating and twin target high-power pulse magnetron sputtering method

Abstract

The invention discloses a movable magnetic field arc ion plating and twin target high-power pulse magnetron sputtering method, belongs to the technical field of material surface treatment, and aims atsolving the problems about film pollution through large particles in arc ion plating, the target material usage limit, arc plasma losses in the magnetic filter device transmission process, unstable high-power pulse magnetron sputtering discharge and the like. The device comprises a bias voltage power source, an arc ion plating target source and power source, a movable coil device and power source, a waveform matching device, a twin target high-power pulse magnetron sputtering target source and power source, an oscilloscope and a vacuum chamber. Film deposition is conducted, device connectionis conducted, the system is started, and when the vacuum degree in the vacuum chamber is smaller than 10<-4>Pa, inflation of work gas is conducted, a coating power source is started, and the bias voltage power source is utilized for adjusting arc plasma energy; and the movable coil device is used for eliminating large particle defects and guiding the composite plasma transmission path, losses in the vacuum chamber are reduced, and technology parameters are set for film preparing.

Description

technical field [0001] The invention relates to an arc ion plating with active magnetic field and a twin target high-power pulse magnetron sputtering method, belonging to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per un...

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses low-melting point pure metals or multi-element alloy materials and non-metallic materials (such as graphite and semiconductor materials Si) as targets, which are prone to large particle defects, curved magnetic filter technology causes low arc plasma transmission efficiency, and the use of target elements and uniform ablation limitation, thin film deposition density and defects, deposition position limitation and workpiece shape limitation caused by vacuum chamber space and target source space layout design, etc. Materials (such as AlSi alloy) and non-metallic materials (such as graphite and semiconductor material Si, etc.) are used as targets for twin target high-power pulse magnetron sputtering, and two different unit targets or unit and Combination of multiple multi-component targets, etc., to achieve multi-component composite plasma generation, and then can deposit various units, multi-component and compound types and films with different element ratios, and use the bipolar characteristics of the high-power pulsed magnetron sputtering power supply of twin targets to eliminate At present, the charge accumulation of high-power pulsed magnetron sputtering discharge causes the problems of sparking and ion resorption. Then, the arc ion plating method is used to realize the plasma with high melting point and high ionization rate, which is combined with The combined effect of the magnetic field confinement of the movable coil device and the attraction of its own bias electric field can eliminate the large particle defects contained in the arc plasma, and at the same time, the movable coil device is used to control the transmission direction of the arc plasma in the vacuum chamber to realize any The thin film deposition on the surface of the base workpiece and the control and adjustment of the thin film composition can reduce the loss of composite plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the space position of the vacuum chamber and the target source or the shape of the substrate, and make the workpiece surface in the vacuum chamber. When negative bias is applied, the ion energy is adjusted, and the large particle defects in the arc plasma are removed by using the bias electric field suppression effect on the surface of the substrate, so as to prepare continuous and dense high-quality films, and at the same time realize the control of the content of target elements in the film , reduce the production cost of using alloy targets, improve the transmission efficiency of plasma, increase the deposition rate of thin films and reduce or even eliminate the adverse effects of large particle defects on thin film microstructure, continuous dense deposition and performance, and propose an active magnetic field Arc Ion Plating and Twin Target High Power Pulse Magnetron Sputtering

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