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Dual-frequency terahertz radiation source based on Dirac semi-metal surface plasmon wave

A surface plasmon, terahertz radiation source technology, applied in the field of radiation source engineering, can solve the problems of low radiation power and inability to cover the terahertz band, etc.

Inactive Publication Date: 2019-06-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned technical background, the purpose of the present invention is to solve the problem that the existing terahertz radiation source technology cannot cover the entire terahertz band and the radiation power is low, and provides a room temperature working, dual-frequency, high-power, which can cover the entire terahertz Coherent Terahertz Radiation Sources in the Hertzian Band

Method used

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  • Dual-frequency terahertz radiation source based on Dirac semi-metal surface plasmon wave
  • Dual-frequency terahertz radiation source based on Dirac semi-metal surface plasmon wave
  • Dual-frequency terahertz radiation source based on Dirac semi-metal surface plasmon wave

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Embodiment Construction

[0043] specific implementation plan

[0044] An embodiment is that a Dirac semi-metal thin film is covered on a dielectric substrate with a buffer layer. figure 1A schematic diagram of the structure in the YOZ plane is given. From bottom to top, there are dielectric substrate, dielectric buffer layer, Dirac semi-metal thin film and moving electrons. The fabrication and processing of this structure also follow the principle of bottom-up. First, select the dielectric substrate material commonly used in the terahertz wave band, and then spin-coat a common organic buffer layer that can be purchased on the market on the substrate material, and use a glue shaker to shake the spin-coated glue evenly, and then use chemical vapor deposition on the buffer layer Accumulative growth of Dirac semimetal thin films. The thickness of the buffer layer is controlled by changing the speed of the glue spinner. The thickness of the Dirac semimetal film is controlled by the growth time.

[0045]...

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Abstract

The invention discloses a dual-frequency terahertz radiation source based on a Dirac semi-metal surface plasmon wave. The dual-frequency terahertz radiation source comprises a dielectric substrate which is covered with a Dirac semi-metal film and has a buffer layer, and moving electrons sweep the surface of a film to excite surface plasmon waves of two modes. When the dielectric constant of the buffer layer is lower than the dielectric constant of the substrate, the two modes can be directly converted into coherent Cherenkov terahertz radiation in the substrate, the power density of the radiation is enhanced to two to three orders of magnitude by the surface plasmon waves, and the dual-frequency terahertz radiation source can be used to develop a dual-frequency coherent terahertz radiationsource with room temperature operation, high power and the coverage of an entire terahertz frequency band.

Description

technical field [0001] The invention belongs to the technical field of radiation source engineering, and relates to a dual-frequency terahertz radiation source based on Dirac semimetal surface plasma waves, specifically a dual-frequency terahertz radiation source that can be used in systems such as terahertz imaging, security inspection and communication. A source of coherent terahertz radiation. Background technique [0002] Terahertz waves lie between microwaves and infrared rays on the electromagnetic spectrum. Terahertz waves have many unique properties. First, their photon energy is low, which is lower than the bond energy of various chemical bonds, and can be used for non-destructive and safe detection of the human body and various organisms. Secondly, the wavelength of terahertz is longer than that of visible light, so it can see through smoke, etc., and has good penetration to many substances (ceramic, fat, carbon plate, cloth, plastic). Furthermore, the terahertz ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S1/02
Inventor 赵陶胡旻
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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