CsPbBr3 quantum dot-silicon based composite structure solar cell

Abstract

The invention relates to a CsPbBr3 quantum dot-silicon based composite structure solar cell in the field of solar cells. The solar cell comprises a silicon-based solar cell and a CsPbBr3 quantum dot film coated on the surface of the silicon cell, and the thickness of the CsPbBr3 quantum dot film is 20-25nm. According to the CsPbBr3 quantum dot-silicon based composite structure solar cell, the CsPbBr3 quantum dot film is prepared in the surface of the silicon based solar cell in a spin coating method to form the CsPbBr3 quantum dot-silicon based composite structure solar cell, a fluorescence downward transfer layer is formed in the surface of the silicon based solar cell, compared with a traditional II-VI family compound quantum dot downward transfer material, the CsPbBr3 quantum dots havethe advantages of large absorption cross section and high absorptivity, the short wave response and photovoltaic characteristic of the cell can be enhanced by spin-coating a single film, adverse influence of increasing the serial connection resistance due to the fact that the downward transfer layer is too thick can be avoided, a film forming parameter is controllable, the surface reflectivity ofthe composite structure cell is reduced, short wave response is improved, long wave response is increased, the short-circuit current is increased, and the photovoltaic conversion efficiency of the cell is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a CsPbBr that improves the photoelectric conversion efficiency of the cell 3 Quantum dot-silicon composite structure solar cells. Background technique [0002] In the prior art, the key issue in the research of silicon-based solar cells is how to realize high-efficiency photoelectric conversion without greatly increasing the production cost. Among them, the introduction of new materials and traditional silicon-based photovoltaic devices to form a nanocomposite structure is considered to be an effective way to broaden the spectral response wavelength range of the battery, thereby obtaining a new generation of silicon-based solar cells with high efficiency and low cost. One of the research frontiers and hot issues. Due to the thermal relaxation loss of traditional silicon-based solar cells, the effective response spectrum is only in the range of 500-1000nm, and the near-ultraviolet pho...

AI Technical Summary

Problems solved by technology

Common down-transfer materials are cadmium-based compound semiconductor quantum dots (CdS, CdSe, etc.). In order to ensure the stability of quantum dot material properties in practical applications, thick core-shell structures are generally used, and the preparation process is complicated. Future industrialization may face price and cost. , environmental issues and other challenges

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