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Size-controllable three-layered nanopore structure and preparation method and application thereof

A nanopore structure and nanopore technology, applied in biochemical equipment and methods, nanotechnology for sensing, nanomedicine, etc., can solve the problem that nanopores cannot be directly produced, chip structures have not been well solved, Affect the horizontal resolution of base sequence recognition and other issues, achieve wide application prospects and value, low manufacturing cost, and improve the effect of horizontal resolution

Pending Publication Date: 2019-05-28
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, neither the structure of such a chip for dynamical alignment nor how to fabricate it has been well resolved.
The traditional preparation method uses gallium ion beams, which cannot directly produce nanopores with a diameter of less than 20nm, which directly affects the horizontal resolution of base sequence recognition.

Method used

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  • Size-controllable three-layered nanopore structure and preparation method and application thereof
  • Size-controllable three-layered nanopore structure and preparation method and application thereof
  • Size-controllable three-layered nanopore structure and preparation method and application thereof

Examples

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Effect test

Embodiment 1

[0056] A size-controllable three-layer nanopore structure and a preparation method thereof, comprising the steps of:

[0057] S1. Provide a three-layer nano-film structure Si 3 N 4 / SiO 2 / Si 3 N 4 ,Such as figure 2 Shown; the first layer of Si 3 N 4 Nanofilm 1 and third layer Si 3 N 4 The thickness of the nano film 2 is 30nm, and the second layer of SiO 2 The thickness of the nano film is 50nm;

[0058] S2. The three-layer nano-film structure is etched by a gallium ion beam to obtain a three-layer nano-through hole with a diameter of 50 nm, such as image 3 and Figure 4 shown;

[0059] S3. Electron beam treatment of the first layer of Si 3 N 4 Nanopore 1 performs shrinkage, such as Figure 6 shown;

[0060] S4. Then use electron beam to treat the third layer of Si 3 N 4 Nanopore 2 is subjected to shrinkage to obtain a three-layer nanopore structure, such as Figure 7 shown;

[0061] In steps S3 and S4, a scanning electron microscope is used to generate ...

Embodiment 2

[0063] A size-controllable three-layer nanopore structure and a preparation method thereof, comprising the steps of:

[0064] S1. Provide a three-layer nano-film structure Si 3 N 4 / Si / Si 3 N 4 ; the first layer of Si 3 N 4 Nanofilm and third layer Si 3 N 4 The thickness of the nano film is 5nm, and the thickness of the second layer of Si nano film is 20nm;

[0065] S2. Etching the three-layer nano-film structure with a helium ion beam to obtain a three-layer nano-through hole with a diameter of 50 nm;

[0066] S3. Using electron beam to treat the third layer of Si 3 N 4 Nanopores for shrinkage;

[0067] S4. Then use electron beam to treat the first layer of Si 3 N 4 The nanopores are shrunk to obtain a three-layer nanopore structure;

[0068] In steps S3 and S4, a scanning electron microscope is used to generate an electron beam. The parameters of the electron beam are as follows: the electron beam voltage is 0.5kV, the electron beam current is 0.5µA, the contin...

Embodiment 3

[0070] A size-controllable three-layer nanopore structure and a preparation method thereof, comprising the steps of:

[0071] S1. Provide a three-layer nano-film structure SiO 2 / Si / SiO 2 ; the first layer of SiO 2 Nanofilm and third layer SiO 2 The thickness of the nano film is 50 nm, and the thickness of the second Si nano film is 200 nm;

[0072] S2. Using gallium ion beams to etch the three-layer nano-film structure to obtain a three-layer nano-through hole with a diameter of 300nm;

[0073] S3. Electron beam treatment of the first layer of SiO 2 Nanopores for shrinkage;

[0074] S4. Then electron beam is used to treat the third layer of SiO 2 The nanopores are shrunk to obtain a three-layer nanopore structure;

[0075] In steps S3 and S4, a transmission electron microscope is used to generate an electron beam. The parameters of the electron beam are as follows: the electron beam voltage is 20kV, the electron beam current is 50µA, the continuous scanning time is 5...

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Abstract

The invention discloses a size-controllable three-layered nanopore structure and a preparation method and application thereof. The preparation method comprises the following steps: (S1) by etching a three-layered nano-film structure, a three-layered through nanopore is obtained; (S2) an electron beam is adopted to shrink the three-layered through nanopore in S1, so that a three-layered nanopore structure is obtained; and the scanning area of the electron beam is 300nm multiplied by 300nm to 20 Mu m multiplied by 20 Mu m. The invention integrates an ion beam with an electron beam to prepare thethree-layered nanopore structure with a smaller nanopore aperture, and moreover, the size controllability of the nanopore can be realized. The invention can prepare the three-layered nanopore structure with a thinner film and a nanopore aperture less than 10nm, and the three-layered nanopore structure can realize the mechanical proofreading of DNA molecules and increase the vertical resolution and horizontal resolution of base sequence recognition.

Description

technical field [0001] The invention relates to the technical field of preparation and application of micro-nano devices, and relates to a size-controllable three-layer nanopore structure and a preparation method and application thereof. Background technique [0002] It has been more than 20 years since nanopores were used to study the base sequence recognition of DNA molecules. When DNA molecules pass through the nanopore under the action of electric field force, different bases can be recognized by changing the amplitude of the ion current in the nanopore. Since the gap between base pairs is as small as 0.34 nm, scientists have been pursuing thinner nanopores to improve the vertical resolution of base sequence recognition, for example, using graphene, molybdenum disulfide, boron nitride, etc. Thin materials are fabricated into nanopores. However, graphene will cause some DNA to adsorb on the pore wall and cause nanopore blockage. At the same time, the thermal movement o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C12Q1/6869B82Y40/00B82Y5/00B82Y15/00
Inventor 袁志山雷鑫吴丹丹王成勇凌新生
Owner GUANGDONG UNIV OF TECH
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