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Preparation method of graphene on diamond (111) surface

A diamond and graphene technology, applied in chemical instruments and methods, from chemically reactive gases, crystal growth and other directions, can solve the problems of insufficient research on graphene preparation, graphene can not meet practical applications, etc., and the method is simple and easy to implement. , the effect of high area controllability

Active Publication Date: 2011-06-22
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a kind of graphene preparation method on the diamond (111) face, to solve the problem that the graphene prepared by known technology can not satisfy its practical application in the device aspect, and prepare graphene on different substrates The current state of under-researched

Method used

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  • Preparation method of graphene on diamond (111) surface
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  • Preparation method of graphene on diamond (111) surface

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Effect test

Embodiment 1

[0039] Please refer to figure 1 , carried out in a hot filament chemical vapor deposition system, the method of the present invention is described in detail through the following specific steps.

[0040] 1) Use diamond grinding paste to grind the cleaned quartz sheet to form nucleation points of diamond particles. The treatment time is 5 minutes, and then use acetone and alcohol to clean the quartz sheet for 10 minutes each.

[0041] 2) Then put the quartz plate as the substrate 2 on the substrate support, evacuate to below 5Pa, then pass methane and hydrogen into the cavity, the flow rates are 4 sccm and 100 sccm respectively, that is, the volume ratio of the two is 4:100 . When the air pressure reaches 4kPa and stabilizes, the filament is heated to about 2200°C, and the substrate temperature is kept at about 800°C to grow the diamond transition layer 3, and the growth time is set to 0.5 hours.

[0042] 3) Vacuumize to below 5 Pa, then feed methane, hydrogen, and hydrogen c...

Embodiment 2

[0045] Carried out in a hot filament chemical vapor deposition system, the method of the present invention is described in detail by the following specific steps.

[0046] 1) Use diamond powder suspension to ultrasonically treat the cleaned silicon wafer to form nucleation sites. The treatment time is 20 minutes, and then clean the silicon wafer with acetone and alcohol for 10 minutes each.

[0047] 2) Then put the silicon wafer as the substrate on the substrate holder, evacuate to below 5Pa, and then pass methane and hydrogen into the cavity with the flow rates of 4 sccm and 100 sccm respectively, that is, the volume ratio of the two is 2:100. When the pressure reaches 4kPa and stabilizes, heat the filament to about 2200°C and keep the substrate temperature at about 700°C to grow the diamond transition layer, and the growth time is set to 1 hour.

[0048] 3) Vacuumize to below 5 Pa, then feed methane, hydrogen, and hydrogen carrying trimethyl borate into the cavity, the flow ...

Embodiment 3

[0051] It is carried out in a hot filament chemical vapor deposition system, and the method of the present invention is described in detail through the following specific steps.

[0052] 1) Using the natural diamond (111) surface as a substrate, wash with acetone and alcohol for 10 minutes each.

[0053] 2) Then put the diamond substrate on the substrate support, evacuate to below 5Pa, and then pass methane and hydrogen into the cavity with the flow rates of 3 sccm and 100 sccm respectively, that is, the volume ratio of the two is 3:100. When the pressure reaches 7kPa and stabilizes, heat the filament to about 2200°C and keep the substrate temperature at about 900°C to grow the diamond transition layer, and the growth time is set to 0.5 hours.

[0054] 3) Vacuumize to below 5 Pa, then feed methane, hydrogen, and hydrogen carrying trimethyl borate into the cavity, the flow rates are 6 sccm, 100 sccm, and 1 sccm respectively, that is, the volume ratio of the three is 6:100:1. W...

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Abstract

The invention discloses a preparation method of graphene on a diamond (111) surface, which mainly comprises the steps of: (1) growing an undoped diamond transition layer on a substrate: placing the substrate on a substrate support of a cavity of a hot filament chemical vapor deposition system, and growing a diamond transition layer; (2) growing a B-doped diamond film on the diamond transition layer; and (3) forming the grapheme through annealing and self-organization. By the preparation method, larger-size samples can be prepared, and the size is from nano scale to micron scale even millimeter scale. The method for preparing the graphene through self-organization, and is easier to realize; the grown grapheme has higher area controllability, can reach the micron scale or larger size which cannot be realized by most existing methods. In addition, the diamond has multiple excellent characteristics, and the boron-doped diamond substrate is not symmetrical, therefore, the graphene formed on the boron-doped diamond substrate can easily generate an energy gap, which is more beneficial to application of the graphene to devices.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for preparing graphene by self-assembly on a diamond (111) surface through a chemical vapor deposition diamond film method and B doping and annealing technology in the growth process . Background technique [0002] Graphene has an ideal two-dimensional structural lattice, which shows great application potential in many fields because of its excellent thermal conductivity, wear resistance and electron transport properties. In recent years, graphene has become a research hotspot. The earliest graphene was obtained by micromechanical exfoliation or chemical exfoliation of highly oriented pyrolytic graphite, such as the reference "Electric Field Effect in Atomically Thin Carbon Films", Disclosed in "Science", 2004, Vol.306, No.5696:666-669, and "Two-dimensional atomic crystals (Two-dimensional atomic crystals)", contained in "Proceedings of the National Academy of Science...

Claims

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Application Information

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IPC IPC(8): C30B25/02C30B25/08C30B25/10C30B25/14C30B25/18
Inventor 顾长志路超李俊杰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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