Memristor-based neurosynaptic bionic device and a preparation method thereof

A technology of neural synapses and memristors, applied in electrical components and other directions, can solve the problems of inability to precisely control the flow of conductive particles, low efficiency of neural synaptic functions, and no short-term plasticity, and achieve efficient simulation of neural synaptic functions, Stable performance and short-term plasticity

Active Publication Date: 2019-05-24
BEIJING INSTITUTE OF GRAPHIC COMMUNICATION
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although this characteristic of the memristor is similar to the synaptic weight change characteristic of the synapse under the stimulation of bioelectrical signals, it still cannot precisely control the flow of conductive particles of the memristor, and the resistive functional layer of the conventional memristor mainly It is composed of materials such as titanium dioxide, zinc oxide, perovskite manganese oxide, amorphous silicon, and chalcogenides. Through chemical structure design and synthesis, the control space of the electrical properties of the device is small.
Therefore, the existing memristors have low efficiency in simulating synaptic functions and do not have short-term plasticity, which restricts the further development of this device as a synaptic bionic device.

Method used

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  • Memristor-based neurosynaptic bionic device and a preparation method thereof
  • Memristor-based neurosynaptic bionic device and a preparation method thereof

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preparation example Construction

[0042] The preparation method of the above memristor-based synapse bionic device includes:

[0043] 1) On the upper surface of the first flexible substrate, the silver nanowire ink is sprayed by electrostatic spraying method, and the droplets randomly occupy positions and stack each other to form a silver nanowire wet film, and the surface is attached to the first flexible substrate of the silver nanowire wet film Constant heat treatment in a sealed container to obtain a flexible lower electrode layer; during constant heat treatment, the temperature is controlled at 120-220° C., and the duration is controlled at 30-120 minutes.

[0044] 2) With the flexible lower electrode layer as the substrate, the temperature of the flexible lower electrode layer is controlled between 25 and 280°C, and the high-purity copper sheet is added to the high-purity nitrogen by radio frequency response magnetron co-sputtering method. On the silicon nitride target, the doping amount of copper is cha...

specific Embodiment approach

[0050] (1) Preparation of flexible lower electrode layer: Spray silver nanowire ink on the upper surface of the PI film by electrostatic spraying method, the droplets randomly occupy space and stack each other to form a silver nanowire wet film, and then attach the silver nanowire wet film to the surface The PI thin film was subjected to constant heat treatment in a sealed container, the temperature of constant heat treatment was 200°C, and the treatment time was 100min.

[0051] (2) Preparation of flexible upper electrode layer: spray silver nanowire ink on the upper surface of the PI film by electrostatic spraying method, the droplets randomly occupy space and stack each other to form a silver nanowire wet film, and then attach the silver nanowire wet film to the surface The PI thin film was subjected to constant heat treatment in a sealed container, the temperature of constant heat treatment was 200°C, and the treatment time was 100min.

[0052] (3) Preparation of copper na...

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Abstract

The invention discloses a memristor-based neurosynaptic bionic device and a preparation method thereof. The bionic device comprises: a flexible lower electrode layer, a copper nanoparticle-doped silicon oxynitride film layer deposited on the flexible lower electrode layer, and a flexible upper electrode layer over the copper nanoparticle-doped silicon oxynitride film layer. The flexible lower electrode layer includes a first flexible substrate and a first silver nanowire transparent electrode over the first flexible substrate. The flexible upper electrode layer includes a second flexible substrate and a second silver nanowire transparent electrode under the second flexible substrate. The lower electrode layer and the upper electrode layer are both prepared by spraying the flexible substrate with silver nanowire ink to form a silver nanowire wet film, and performing a constant-heat treatment in a sealed container. The copper nanoparticle-doped silicon oxynitride film layer is prepared by applying a copper piece to a silicon nitride target by radiofrequency reaction magnetron sputtering and introducing oxygen. The neurosynaptic bionic device of the present invention is capable of efficiently simulating a neurosynaptic function and has short-term plasticity.

Description

technical field [0001] The invention relates to the technical field of synaptic bionic devices, in particular to a memristor-based neurosynaptic bionic device and a preparation method. Background technique [0002] The basic unit of the brain to process information is the neuron, and the synapse is the key part where neurons contact each other and transmit information. Neurotransmitters are released into the synaptic cleft through the presynaptic membrane, and act on the receptors on the post-synaptic membrane, so that the potential change of the post-synaptic membrane causes the next neuron to excite or inhibit. Synapses change under the stimulation of electrical signals, so that the connection strength between neurons is strengthened or weakened, that is, synapses have plasticity. The memory and learning functions of biological systems are based on the precise control of the flow of ions through neurons and synapses. Synaptic function simulation is the key to realize bio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCY02P70/50
Inventor 刘儒平石月李烨邓骞王慰李路海
Owner BEIJING INSTITUTE OF GRAPHIC COMMUNICATION
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