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A quantum dot light-emitting device with a double-functional electron transport layer inverted structure and its preparation method

A technology of quantum dot luminescence and electron transport layer, which is applied in the field of flat panel display, and can solve problems affecting device brightness and efficiency, and limiting the use of organic hole transport layer materials, etc.

Active Publication Date: 2021-07-06
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the preparation process of the traditional organic-inorganic hybrid charge transport layer structure QD-LED, it is necessary to consider the use of orthogonal solvents to avoid dissolution during the film deposition process, resulting in mutual mixing at the interface between the quantum dot layer and the hole transport layer to make quantum The dots serve as both the charge transport layer and the light-emitting layer, which affects the brightness and efficiency of the device, thus limiting the use of organic hole transport layer materials.

Method used

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  • A quantum dot light-emitting device with a double-functional electron transport layer inverted structure and its preparation method
  • A quantum dot light-emitting device with a double-functional electron transport layer inverted structure and its preparation method
  • A quantum dot light-emitting device with a double-functional electron transport layer inverted structure and its preparation method

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Effect test

Embodiment 1

[0057] A method for preparing a double-functional electron transport layer inverted structure quantum dot light-emitting device, comprising the following steps:

[0058] 1) Preparation of the glass substrate: Cut the glass into a size of 20×16mm to obtain a glass substrate, place it in a solution mixed with detergent for ultrasonic cleaning for 10 minutes, then place it in acetone for 30 minutes, and then place it in ethanol for cleaning 20min, and finally ultrasonic cleaning in deionized water for 10min, drying after cleaning for later use.

[0059]2) Preparation of bifunctional thin film layer: Dissolve zinc acetate and diethanolamine in absolute ethanol at a concentration of 0.1mol / L, stir at 60°C for 30min, spin-coat on a glass substrate and place in a 400°C Heat treatment on the heating plate for 20-30 minutes, repeat the spin coating and heat treatment 3 times to obtain the ZnO seed layer, and then wash the surface with absolute ethanol and deionized water to remove exce...

Embodiment 2

[0067] A method for preparing a double-functional electron transport layer inverted structure quantum dot light-emitting device, comprising the following steps:

[0068] 1) Preparation of the glass substrate: Cut the glass into a size of 20×16mm to obtain a glass substrate, place it in a solution mixed with detergent for ultrasonic cleaning for 15 minutes, then place it in acetone for 20 minutes, and then place it in ethanol for cleaning 15 minutes, and finally placed in deionized water for ultrasonic cleaning for 20 minutes, and then dried for later use.

[0069] 2) Preparation of bifunctional thin film layer: Dissolve zinc acetate and diethanolamine in absolute ethanol at a concentration of 0.1mol / L, stir at 60°C for 30min, spin-coat on a glass substrate and place in a 400°C Heat treatment on the heating plate for 20-30 minutes, repeat the spin coating and heat treatment 3 times to obtain the ZnO seed layer, and then wash the surface with absolute ethanol and deionized water...

Embodiment 3

[0077] A method for preparing a double-functional electron transport layer inverted structure quantum dot light-emitting device, comprising the following steps:

[0078] 1) Preparation of the glass substrate: Cut the glass into a size of 20×16mm to obtain a glass substrate, place it in a solution mixed with detergent for ultrasonic cleaning for 20 minutes, then place it in acetone for 10 minutes, and then place it in ethanol for cleaning 20min, and finally ultrasonic cleaning in deionized water for 30min, drying after cleaning for later use.

[0079] 2) Preparation of bifunctional thin film layer: Dissolve zinc acetate and diethanolamine in absolute ethanol at a concentration of 0.1mol / L, stir at 60°C for 30min, spin-coat on a glass substrate and place in a 400°C Heat treatment on the heating plate for 20-30 minutes, repeat the spin coating and heat treatment 3 times to obtain the ZnO seed layer, and then wash the surface with absolute ethanol and deionized water to remove exc...

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Abstract

The invention relates to the technical field of flat panel display. A double-function electron transport layer inverted structure quantum dot light-emitting device, characterized in that it includes a glass substrate, a double-function thin film layer, an ultra-thin dielectric layer, a quantum dot light-emitting layer, a hole transport layer, a hole injection layer, and a top electrode The dual-function film layer is deposited on the glass substrate, the ultra-thin dielectric layer is deposited on the dual-function film layer, the quantum dot light-emitting layer is deposited on the ultra-thin dielectric layer, and the hole transport layer is deposited on the quantum dot light-emitting layer. The hole injection layer is deposited on the hole transport layer, and the top electrode is deposited on the hole injection layer by vacuum evaporation or magnetron sputtering. The invention introduces a dielectric layer, which can effectively reduce the electron injection rate and prevent excessive injection of electrons, so that the carriers in the QD-LED device are balanced, and the luminous efficiency and brightness of the device are improved; at the same time, compared with the traditional structure of the QD-LED Device, the present invention simplifies the structure of the device, and has the advantages of low manufacturing cost and environmental protection.

Description

technical field [0001] The invention belongs to the technical field of flat panel display, and in particular relates to an inverted quantum dot light-emitting device and a preparation method thereof. Background technique [0002] Quantum dots (Quantum dots, QDs), also known as semiconductor nanocrystals, generally have a particle size between 1-10 nm and have obvious quantum effects. Quantum dots are generally composed of semiconductor materials such as group II-VI elements (such as CdS, CdSe, CeTe, etc.) or group III-V elements (interval-free quantum dots such as InP, InAs, etc.), and can also be composed of two or more semiconductor materials. The material constitutes the core / shell structure (such as common CdSe / ZnS, CdSe / ZnS, CuInS 2 / ZnS and other core / shell structure quantum dots, etc.). The application of quantum dots in optoelectronics usually adopts a core / shell structure to eliminate the defects on the surface of quantum dots and prevent the carriers in the quant...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
Inventor 李宏叶琪吴智鑫刘立旺
Owner WUHAN UNIV OF TECH
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