Nitrogen dioxide gas sensor based on flower-shaped SnSe2/SnO2 heterojunction, and preparation technology and application of nitrogen dioxide gas sensor

A gas sensor, nitrogen dioxide technology, applied in the direction of material resistance, etc., can solve the problems of difficulty in accurately detecting low-concentration gas, increased energy consumption, unsatisfactory gas characteristics, etc., to reduce stacking phenomenon, promote oxygen adsorption, Get convenient effects

Inactive Publication Date: 2019-04-23
DALIAN UNIV OF TECH
View PDF1 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this kind of semiconductor gas sensor is not ideal for gas characteristics under low temperature conditions, and it is difficult to accurately detect low-concentration gases. Usually, it is necessary to install a heating wire on the gas sensor element to make the element meet the optimum working temperature and enhance the gas sensor. Sensitivity
However, elevating the components to a higher temperature not only increases energy consumption, but also easily deteriorates the performance of the components and shortens the service life

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitrogen dioxide gas sensor based on flower-shaped SnSe2/SnO2 heterojunction, and preparation technology and application of nitrogen dioxide gas sensor
  • Nitrogen dioxide gas sensor based on flower-shaped SnSe2/SnO2 heterojunction, and preparation technology and application of nitrogen dioxide gas sensor
  • Nitrogen dioxide gas sensor based on flower-shaped SnSe2/SnO2 heterojunction, and preparation technology and application of nitrogen dioxide gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A flower-like SnSe based 2 / SnO 2 The nitrogen dioxide gas sensor is composed of a gas-sensing material and an interdigital electrode plate, and the gas-sensing material is coated on the surface of the substrate with a coating thickness of 100 μm. The composition of the gas-sensitive material is SnSe formed by calcining at 400°C for 1 hour 2 / SnO 2 Heterojunction Composite Nanomaterials. The preparation method comprises the following steps:

[0033] Step 1, preparation of flower-like SnSe 2 Nanomaterials: Dissolve 1.8mL C 2 h 8 N 2 , 34.2mL (CH 2 Oh) 2 Pour into a 50mL beaker, add 406.2mg of stannous chloride and 142.1mg of selenium powder, stir magnetically for 20 minutes, pour into a 50mL polytetrafluoroethylene liner, put it into a reaction kettle, put it in a muffle furnace, and heat up at a rate of 5 °C / min, the reaction temperature is 180 °C, the reaction time is 5 hours, and the cooling rate is 3 °C / min. After the obtained black product is separated by ...

Embodiment 2

[0040] A flower-like SnSe based 2 / SnO 2 The nitrogen dioxide gas sensor is composed of a gas-sensing material and an interdigital electrode plate, and the gas-sensing material is coated on the surface of the substrate with a coating thickness of 100 μm. The composition of the gas-sensitive material is SnSe formed by calcining at 350°C for 1 hour 2 / SnO 2 Heterojunction Composite Nanomaterials. The preparation method comprises the following steps:

[0041] Step 1, preparation of flower-like SnSe 2 Nanomaterials: Dissolve 1.8mL C 2 h 8 N 2 , 34.2mL (CH 2 Oh) 2 Pour into a 50mL beaker, add 406.2mg of stannous chloride and 142.1mg of selenium powder, stir magnetically for 20 minutes, pour into a 50mL polytetrafluoroethylene liner, put it into a reaction kettle, put it in a muffle furnace, and heat up at a rate of 5 °C / min, the reaction temperature is 180 °C, the reaction time is 5 hours, and the cooling rate is 3 °C / min. After the obtained black product is separated by ...

Embodiment 3

[0045] Nitrogen dioxide gas sensor performance test.

[0046] The sensor prepared in Example 2 was placed in an air atmosphere at a working temperature of 100° C., and then nitrogen dioxide gas molecules were introduced. The resistance change of the sensor in the air and in the 0.5ppm nitrogen dioxide atmosphere with air as the background is measured by a multimeter as the signal of the sensor.

[0047] The sensor prepared in Example 1 was placed in an air atmosphere at a working temperature of 100° C., and then nitrogen dioxide gas molecules were introduced. The resistance change of the sensor in the air and in the 8ppm nitrogen dioxide atmosphere with air as the background is measured by a multimeter as the signal of the sensor. flake SnSe 2 / SnO 2 The sensor prepared by the heterojunction is placed in the air atmosphere, the working temperature is 120°C, and then nitrogen dioxide gas molecules are introduced. The resistance change of the sensor in the air and in the 1pp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Particle sizeaaaaaaaaaa
Interdigital spacingaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of electronic components, and discloses a nitrogen dioxide gas sensor based on a flower-shaped SnSe2 / SnO2 heterojunction, and a preparation technology andapplication of the nitrogen dioxide gas sensor. The nitrogen dioxide gas sensor comprises a gas sensitive material and an interdigital electrode plate, and the surface of the interdigital electrode plate is coated with the gas sensitive material, wherein the coating thickness is 1-100 [mu]m; and the gas sensitive material is a flower-shaped SnSe2 / SnO2 nano-material. The flower-shaped nano heterojunction is obtained through a hydrothermal method and a thermal oxidation method, raw materials are convenient to obtain, low in cost and simple in preparation process, equipment investment is small, and the process flow is simple. The nitrogen dioxide sensor made of the flower-shaped SnSe2 / SnO2 nano-material selects a silicon substrate, the material and silicon-based microelectronics are integrated, and the micro hot plate type nitrogen dioxide gas sensor having the advantages of low heating power consumption, small heat loss, short heat response time, compatibility with a CMOS process, easy integration with other microelectronic devices and the like is prepared.

Description

technical field [0001] The invention belongs to the technical field of electronic components, in particular to a flower-shaped SnSe 2 / SnO 2 Heterojunction nitrogen dioxide gas sensor, fabrication process and application. Background technique [0002] Effective detection of toxic and harmful gases is particularly important for environmental monitoring and human health protection. A gas sensor is a converter that converts a certain gas concentration into a corresponding electrical signal. According to the strength of the electrical signal, information such as the presence of the gas to be measured in the environment can be obtained. Nitrogen dioxide is a gas of great concern in industry and biology. Nitrogen dioxide with a concentration of more than 1ppm (one part per million) will cause damage to the human respiratory system. Nitrogen oxides (NO x , mainly by NO 2 and NO composition) detection (at ppb level) can be used for the diagnosis of respiratory system pathology....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N27/04
CPCG01N27/04
Inventor 李晓干李欣宇刘航林仕伟陈汉德
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap