Silicon-niobium niobate heterogeneity integrated scanning chip, preparation method and application thereof

Abstract

The invention provides a silicon-lithium niobate heterogeneity integrated scanning chip. The chip comprises a lithium niobate substrate, a silica cladding layer, and a silicon waveguide based core layer. The silica cladding layer is attached to the lithium niobate substrate. The core layer comprises an optical beam splitting unit, a curved waveguide, a thermo-optical phase shifter, and an emergentwaveguide array. The optical beam splitting unit, the curved waveguide, and the emergent waveguide array are located in the silica cladding layer. The thermo-optical phase shifter is disposed on thesilica cladding layer and is located on the curved waveguide. The optical beam splitting unit comprises a plurality of silicon waveguide based beam splitters. According to the silicon-lithium niobateheterogeneity integrated scanning chip, the silicon waveguide substrate is integrated with the heterogeneity of the lithium niobate material, and thermo-optic modulation is used based on the optical phased array technology, so as to change the the refractive index of the waveguide, change the phase of the beam, and deflect the exit direction, thereby obtaining a high-speed low-loss optical modulation chip structure of 1520nm to 1620nm optical communication waveband. The invention further provides a preparation method and application of the chip.

Description

Technical field [0001] The invention relates to a high-speed optical modulation chip in the optical communication band, in particular to a silicon-lithium niobate heterogeneous integrated scanning chip and a preparation method and application thereof. Background technique [0002] With the advent of the big data era, the bandwidth and capacity of communication networks have increased rapidly. Based on the existing traditional optical signal processing devices, not only the bandwidth and speed have encountered bottlenecks, but the energy consumed has also increased sharply. Therefore, there is an urgent need to develop ultra-high-speed, New integrated optoelectronic devices with low energy consumption. Among them, as a core device in many fields such as optical information processing, spectrum measurement, and optical storage, optical modulators have developed a variety of devices based on the effects of electro-optics, acousto-optics, magneto-optics, etc., while electro-optic mod...

AI Technical Summary

Problems solved by technology

However, since the second-order nonlinear optical coefficient of the silicon material itself is very small, it is difficult to realize electro-optical modulation. Therefore, it is often necessary to modulate the optical properties of the material by changing the concentration of the external carrier, and then realize the modulation of light waves, such as forming p-i-n by ion implantation. type structure, but this also leads to a large transmission loss of the waveguide, and the modulation efficiency is not high

Therefore, for the heterogeneous integration of low-loss waveguides and lithium niobate materials, so far, there has not been a structural design for the heterogeneous integration of silicon waveguide substrates and lithium niobate materials for the 1520 nm to 1620 nm optical communication band. and ways to achieve

Images