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Bonding method of silicon carbide seed crystals and preparation method of silicon carbide single-crystal ingot

A silicon carbide seed and bonding method technology is applied to the preparation of silicon carbide single crystal ingots and the bonding field of silicon carbide seed crystals. Improve the growth quality and pass rate, solve the temperature unevenness, and ensure the effect of temperature uniformity

Inactive Publication Date: 2019-04-02
安徽长飞先进半导体有限公司
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  • Application Information

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Problems solved by technology

Although all of them can realize the preparation of silicon carbide single crystal ingots, the quality of the obtained ingots is poor and the cost is high
Usually, during the growth process of silicon carbide single crystal ingot, the heat transfer mode has two heat transfer modes: heat conduction and heat radiation. With graphite plate as the heat transfer medium, its heat conduction is not as fast as silicon carbide single crystal, and graphite plate is opaque. , so most of the energy of thermal radiation will be reflected back and forth between the graphite plate and the heating body and dissipated, resulting in low heat utilization efficiency, which in turn affects the temperature field of the grown crystal, resulting in poor quality of the grown single crystal ingot
In addition, the traditional seed crystal bonding method has uneven heating of the seed crystal, which will also affect the quality of crystal growth.
[0004] The traditional silicon carbide bonding seed crystal method is to directly bond the seed crystal to the graphite crucible cover. The disadvantage is that there are many residues on the surface of the used crucible cover, resulting in uneven surface of the graphite crucible cover, which cannot be used many times.
The traditional single crystal ingot preparation method of graphite induction ring is complicated in mechanical design and difficult to process. In addition, the design of its hollow structure limits the amount of raw material input, which is not conducive to mass production of large crystal ingots.
For a fixed silicon carbide crystal growth furnace, the external magnetic induction coil is fixed, and the height of the crucible is also fixed. When the height of the crucible is fixed and the distance between the seed crystal and the raw material is fixed, the position of the seed crystal is closer to the raw material feeding area. Proximity means that the amount of raw material input can only be reduced, which will limit the size of a single crystal ingot, resulting in a decrease in the wafer output of a single crystal ingot, and increasing the operating cost of the silicon carbide crystal growth furnace

Method used

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Embodiment 1

[0040] A method for bonding silicon carbide seed crystals, comprising the following steps:

[0041] (1) Mix silicon powder, carbon powder and silicon carbide powder, add starch as a binder, and ethylene glycol as an organic solvent, mix with a mixer at a speed of 2000 rpm for 1 hour, and obtain a mixed material with uniform color; wherein the silicon powder The mass ratio to carbon powder is 7:3; silicon carbide powder accounts for 5% of the total mass of silicon powder and carbon powder; starch accounts for 5% of the total mass of silicon powder and carbon powder;

[0042] (2) Spread the mixed material evenly on a silicon carbide wafer with a thickness of 300 μm with a homogenizer;

[0043] (3) placing the silicon carbide seed crystal on the mixed material on the silicon carbide wafer;

[0044] (4) Put the silicon carbide wafer in the step (3) into the heating furnace, such as image 3 As shown, under the protection of inert gas, according to the heating rate of 1000 ℃ / h,...

Embodiment 2

[0047] A method for bonding silicon carbide seed crystals, comprising the following steps:

[0048] (1) Mix silicon powder, carbon powder and silicon carbide powder, add dextrin as a binder, and mix with a mixer at a speed of 2000rpm for 1 hour to obtain a mixed powder with uniform color; wherein the mass ratio of silicon powder to carbon powder is 7:3; silicon carbide powder accounts for 10% of the total mass of silicon powder and carbon powder; dextrin accounts for 5% of the total mass of silicon powder and carbon powder;

[0049] (2) Hand-sprinkle the mixed powder evenly with a sieve on a silicon carbide wafer with a thickness of 300 μm;

[0050] (3) placing the silicon carbide seed crystal on the mixed powder on the silicon carbide wafer;

[0051] (4) Put the silicon carbide wafer in step (3) into a heating furnace, and heat it at 1700°C for 8 hours under the protection of an inert gas, and then the silicon carbide seed crystal and the silicon carbide wafer can be bonded ...

Embodiment 3

[0054] A method for bonding silicon carbide seed crystals, comprising the following steps:

[0055] (1) Mix the silicon carbide powder and starch with a mixer at a speed of 3000 rpm for 1 hour to obtain a mixed powder with uniform color; wherein the starch accounts for 8% of the mass of the silicon carbide powder;

[0056] (2) Hand-sprinkle the mixed powder evenly with a sieve on a silicon carbide wafer with a thickness of 300 μm;

[0057] (3) placing the silicon carbide seed crystal on the mixed powder on the silicon carbide wafer;

[0058] (4) Put the silicon carbide wafer in step (3) into a heating furnace, and heat it at 1800°C for 9 hours under the protection of an inert gas, and then the silicon carbide seed crystal and the silicon carbide wafer can be bonded tightly to obtain bonded carbonization Silicon seed. The samples in this step are subjected to double-sided visual inspection, strong light transmission visual inspection on the back, surface inspection on an opti...

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Abstract

The invention discloses a bonding method of silicon carbide seed crystals and a preparation method of silicon carbide single-crystal ingot. The bonding method of the silicon carbide seed crystal comprises the following steps: mixing silicon carbide powder, carbon powder and silicon powder, adding a binder, uniformly carrying out mixing to obtain mixed powder, coating a silicon carbide wafer with the mixed powder, placing the silicon carbide seed crystals on the mixed powder, and enabling the seed crystals to be tightly bonded with the silicon carbide wafer under an inert atmosphere at a temperature of 1500-2000 DEG C to obtain the silicon carbide bonded seed crystals, wherein no impurities are introduced. When the silicon carbide bonded seed crystals obtained through the method is used ingrowing the silicon carbide single-crystal ingot through a physical vapor transport (PVT) method in a silicon carbide crystal growth furnace, heat conduction is rapid, heat transfer is uniform, and the high-quality silicon carbide single-crystal ingot can be obtained. According to the method, the feeding space and the feeding amount of the raw materials are increased, so that the size of a singlecrystal ingot is increased, the wafer output of a single crystal ingot is increased, and operation cost of the silicon carbide crystal growth furnace is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material preparation, and in particular relates to a method for bonding a silicon carbide seed crystal and a method for preparing a silicon carbide single crystal ingot. Background technique [0002] Silicon carbide is a new type of wide-bandgap semiconductor material, which has received more and more attention recently. In some extreme application scenarios, such as high temperature, high frequency and high power applications, it is better than traditional sapphire and silicon. The characteristics of silicon carbide mainly include high melting point, high electrical conductivity, high thermal conductivity and high voltage resistance. Therefore, It has become an important material for high-frequency and high-power devices, and is widely used in important fields such as aviation, aerospace, rockets, and geological drilling. [0003] At present, in the process of preparing silicon carbide sin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B29/36
Inventor 张晓洪宋东波程海英钮应喜袁松刘锦锦
Owner 安徽长飞先进半导体有限公司
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