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Preparation method of zirconium-doped hafnium oxide ferroelectric film, and product and application thereof

A hafnium dioxide and ferroelectric thin film technology, which is applied in circuits, electrical components, gaseous chemical plating, etc., can solve problems such as difficulties in thin film preparation, achieve good distribution uniformity, simple and controllable preparation process, and high stability Effect

Pending Publication Date: 2019-03-26
合肥安德科铭半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] What the present invention is to solve is the doped HfO with good ferroelectric properties 2 For the technical problem of difficult film preparation, a preparation method is provided, which can simply and controllably grow high-quality ferroelectric thin films with application value; the present invention also provides the product of the above preparation method and its application

Method used

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  • Preparation method of zirconium-doped hafnium oxide ferroelectric film, and product and application thereof
  • Preparation method of zirconium-doped hafnium oxide ferroelectric film, and product and application thereof
  • Preparation method of zirconium-doped hafnium oxide ferroelectric film, and product and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A 12-inch silicon wafer is placed in a PEALD chamber and heated to 250°C. Introduce gasified hafnium tetramethylethylamino hafnium into the ALD chamber by means of vapor draw, and the introduction time is 5 seconds. After drawing out the excess precursor, fill the ALD chamber with 200 sccm of oxygen, and light the plasma (300W), the duration of the plasma is 5 seconds; after pumping out the by-products, introduce vaporized tetramethylethylamino zirconium into the ALD chamber through steam suction, and the import time is 5 seconds. The ALD chamber is filled with 200 sccm of oxygen, and the plasma (300W) is turned on, and the duration of the plasma is 5 seconds; one cycle of deposition is completed after the by-product is pumped out.

[0042] Repeat this film deposition for a total of 50 cycles. The film was annealed in a chamber at 650°C for 30 minutes.

[0043] Thin Film Properties Test:

[0044] The obtained film was measured by ellipsometry, and the thickness of th...

Embodiment 2

[0046] A 12-inch silicon wafer is placed in a PEALD chamber and heated to 270°C. Introduce vaporized hafnium tetrachloride into the ALD chamber by means of vapor draw for 5 seconds. After drawing out the excess precursor, fill the ALD chamber with 250 sccm of oxygen and light the plasma (450W), the duration of the plasma is 5 seconds; after pumping out the by-products, introduce gasified zirconium tetrachloride into the ALD chamber through steam suction, and the import time is 3.5 seconds. The ALD chamber is filled with 250 sccm of oxygen, and the plasma (300W) is turned on, and the duration of the plasma is 5 seconds; one cycle of deposition is completed after the by-product is pumped out.

[0047] Repeat this film deposition for a total of 60 cycles. The film was annealed in a chamber at 600°C for 30 minutes.

[0048] Thin Film Properties Test:

[0049] The obtained film was measured by ellipsometry, and the thickness of the film was 55A; XPS element composition analysis ...

Embodiment 3

[0051] A 12-inch silicon wafer is placed in a PEALD chamber and heated to 350°C. Introduce vaporized tris(dimethylamino)-trimethylsilyl-cyclopentadienyl hafnium into the ALD chamber by vapor draw for 7 seconds, after drawing out the excess precursor , fill the ALD chamber with 300 sccm of ozone, and complete the deposition through a thermal reaction at 450 °C; after pumping out the by-products, introduce gasified tris(dimethylamino)-trimethyl Silicon-based-cyclopentadienyl zirconium, the import time is 10 seconds, after the excess precursor is pumped out, 300 sccm of ozone is filled into the ALD chamber, and the deposition is completed through a thermal reaction at 450 °C; the deposition is completed after the by-product is pumped out of a cycle.

[0052] Repeat this film deposition for a total of 60 cycles. The film was annealed in a chamber at 630°C for 30 minutes.

[0053] Thin Film Properties Test:

[0054] The obtained film was measured by ellipsometry, and the thickn...

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Abstract

The invention provides a preparation method of a zirconium-doped hafnium oxide ferroelectric film and a product and application thereof. The preparation method is characterized in that the preparationmethod comprises the HfO2 and ZrO2 alternate atomic layer deposition process; the mole ratio of effective Hf to effective Zr in a hafnium-containing precursor and a zirconium-containing precursor ofthe adjacent deposition processes is (40%-60%):(60%-40%). Through the preparation method, the technical problem that a doped HfO2 film with the good ferroelectric properties is hard to prepare can besolved, and the high-quality ferroelectric film with the application value can be grown easily and controllably.

Description

【Technical field】 [0001] The invention relates to the field of semiconductors, in particular to a preparation method, product and application of a high-quality ferroelectric thin film. 【Background technique】 [0002] For years, the IC growth engine has revolved around Moore's Law. Moore's Law states that transistor density doubles every 18 months. According to Moore's Law, chipmakers introduce a new process every 18 months in order to reduce the cost of each transistor. Moore's Law works, but at the same time it's evolving. At each node, process cost and complexity skyrocket, so the change cadence for a fully scaled-down node stretches from 18 months to 2.5 years or more. That said, transistor scaling is slowing while costs are skyrocketing. Currently, the industry is identifying and shrinking transistor structures for the next major node beyond 3nm. At the same time, as the integration density of complementary metal oxide semiconductor (CMOS) devices increases, soaring...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/40H01L21/316H01L29/51
CPCC23C16/405C23C16/45529C23C16/45553H01L21/02181H01L21/0228H01L29/516H01L29/517
Inventor 不公告发明人
Owner 合肥安德科铭半导体科技有限公司
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