Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dots, fabrication methods, single photon sources and qleds

A production method and quantum dot technology, applied in the field of optoelectronics, can solve the problems of low luminous efficiency of devices, and achieve the effect of high reliability and stable devices

Active Publication Date: 2020-12-01
ZHEJIANG UNIV +1
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of this application is to provide a quantum dot, manufacturing method, single photon source and QLED, to solve the problem that the surface ligands of quantum dots in the prior art react with carriers and / or fall off under the condition of electric excitation The problem of low luminous efficiency of the device caused by

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dots, fabrication methods, single photon sources and qleds
  • Quantum dots, fabrication methods, single photon sources and qleds
  • Quantum dots, fabrication methods, single photon sources and qleds

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] The fabrication process of quantum dots includes:

[0067] First make the preparation of quantum dots, which are quantum dots with a core-shell structure, specifically red CdSe / CdS core-shell quantum dots. The synthesis process includes:

[0068] Weigh 0.2 mmol of cadmium oxide, 0.6 mmol of stearic acid and 3 mL of ODE, mix them, and heat to 260° C. to dissolve.

[0069] Inject 1mL*0.1mol of selenium powder-ODE suspension into the solution formed in the upward step, and after 8 minutes, inject 0.05mL*0.1mol of selenium powder-ODE suspension every 3 minutes until the CdSe quantum dot grows to the required size (the first exciton absorption peak is at 550nm), the original reaction solution was obtained.

[0070] Purification of CdSe nuclear quantum dots: Take 1 mL of the original reaction solution, add 2 mL of acetone and 0.5 mL of methanol, heat and centrifuge, and pour off the supernatant. Dissolve the precipitate with 1 mL of toluene, add 1 mL of methanol, heat and c...

Embodiment 2

[0077] The difference from Example 1 is that the modifying agent is n-octylamine.

Embodiment 3

[0079] The difference from Example 2 is: the preparation of quantum dots is red CdSe / CdZnS quantum dots, and its synthesis process includes:

[0080] Weigh 0.2 mmol of cadmium oxide, 0.6 mmol of stearic acid and 3 mL of ODE, mix them, and heat to 260° C. to dissolve.

[0081] Inject 1mL*0.1mol of selenium powder-ODE suspension into the solution formed in the upward step, and after 8 minutes, inject 0.05mL*0.1mol of selenium powder-ODE suspension every 3 minutes until the CdSe quantum dot grows to the required size (the first exciton absorption peak is at 550nm), the original reaction solution was obtained.

[0082] Purification of CdSe nuclear quantum dots: Take 1 mL of the original reaction solution, add 2 mL of acetone and 0.5 mL of methanol, heat and centrifuge, and pour off the supernatant. Dissolve the precipitate with 1 mL of toluene, add 1 mL of methanol, heat and centrifuge. This step was repeated 2 times.

[0083] Take 3mmol of zinc acetate, 0.3mmol of cadmium acet...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The present application provides a quantum dot, a manufacturing method, a single photon source and a QLED. The quantum dot includes a quantum dot body and a ligand arranged on the outer surface of the quantum dot body, the ligand includes an electrochemically inert ligand, and the reduction potential of the electrochemically inert ligand is greater than the potential corresponding to the conduction band bottom of the quantum dot body. The oxidation potential of the inert ligand is lower than the potential corresponding to the bottom of the valence band of the quantum dot body, and the electrochemically inert ligand accounts for more than 80% of all ligands on the outer surface of the quantum dot body. Because the quantum dot includes an electrochemically inert ligand, the luminous efficiency is higher, the device is more stable, and the reliability is higher.

Description

technical field [0001] The present application relates to the field of optoelectronics, in particular, to a quantum dot, a manufacturing method, a single photon source and a QLED. Background technique [0002] Quantum dot light-emitting diode (QLED) is an electroluminescent device that uses quantum dots as the light-emitting center. Quantum dots are inorganic semiconductor nanocrystals dispersed in solution and, therefore, can be processed by solution processing. It is generally believed that inorganic semiconductor nanocrystals possess high photochemical stability. Therefore, QLEDs are expected to realize high-performance solution-processed LEDs by combining the advantages of high-efficiency and stable phosphorescent centers and solution processing. Moreover, the emission wavelength of quantum dots is continuously adjustable, the half-maximum width of the emission spectrum is narrow, and the color purity is high, which has unique advantages in the modulation of high color...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88C09K11/02H01L51/50H10K99/00
CPCC09K11/025C09K11/883H10K50/115B82Y20/00B82Y40/00H05B33/14
Inventor 彭笑刚濮超丹金一政
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com