Infrared light detection thin film, device and display device and fabrication method of infrared light sensing thin film

Abstract

The invention provides an infrared light detection thin film, device and display device and a fabrication method of the infrared light sensing thin film. Compared with a device employing a TFT leakagecurrent as an infrared photosensitive thin film transistor, a bottom gate-type field-effect transistor structure is in a way that a photovoltaic gate is arranged in a gap between a source and a drain, the photoelectron simulation is substantially improved. In each detection pixel, the source and the source are connected in parallel, the drain and the drain are also connected in parallel, adjacentsource and drain are in clearance fit, the recombination probability of electrons and holes of optical excitation is reduced, the success probability of the photoelectrons collected by an electrode under a field-effect effect is improved, and the photosensitivity of the TFT leakage current infrared light thin film transistor is improved to the maximum extent. The infrared light detection thin film can be implemented without doping boron-containing gas, the pollution to an environment during the production process of the infrared light detection thin film is effectively reduced, and the production cost is reduced.

Description

technical field [0001] The invention relates to the field of optical devices, in particular to an infrared light detection film, a device, a display device and a preparation method. Background technique [0002] A liquid crystal display (LCD) screen or an active matrix organic light emitting diode (AMOLED) display screen uses a thin film transistor (TFT) structure to scan and drive a single pixel to realize the display function of the pixel array on the screen. The main structure forming the switching function of the TFT is a semiconductor field effect transistor (FET). The main materials of the well-known semiconductor layer are amorphous silicon, polysilicon, indium gallium zinc oxide (IGZO), or organic compounds mixed with carbon nanomaterials, etc. . Since the structure of infrared photodetection diodes (Photo Diode) can also be made of such semiconductor materials, and the production equipment is also compatible with the production equipment of TFT arrays, in recent ye...

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Problems solved by technology

[0007] Therefore, it is necessary to provide a technical solution for infrared light detection, which is used to solve the problems of low photoelectric conversion rate, easy pollution, complicated process and high cost in the existing infrared light detection film.

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