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Method for micro-wave plasma low-temperature synthesizing film

A technology of microwave plasma and diamond synthesis, applied in the field of material science, can solve the problems of slow deposition rate, increase equipment cost and diamond synthesis cost, etc., and achieve the effect of promoting excitation and stabilization, easy implementation, and high electron density

Inactive Publication Date: 2007-08-29
WUHAN UNIV OF TECH
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AI Technical Summary

Problems solved by technology

[0002] At present, the method of microwave plasma low-temperature synthesis of diamond film is the electron cyclotron resonance (ECR) method, which uses a magnetic field with a very high magnetic field strength (about 900 Gauss) to confine microwave plasma, and needs to synthesize diamond at a pressure lower than 0.1Pa. In order to obtain a low temperature below 250 ° C, but the deposition rate is very slow, in order to achieve a pressure below 0.1 Pa, a complex vacuum system is required, which greatly increases the cost of equipment and the cost of diamond synthesis

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0008] Embodiment 1: Fill the Ar of 40vol% and the H of 58vol% in the microwave plasma synthesis cavity 2 , so that the gas is ionized to form a plasma when the microwave power is 700W and the air pressure is 1000Pa. After the plasma is stable, 2vol% CH is filled into the plasma chamber. 4 , the deposition of diamond nanofilms can be realized at low temperature.

Embodiment 2

[0009] Embodiment 2: Fill the Ar of 40vol% and the H of 48vol% in microwave plasma synthesis cavity 2 , so that the gas is ionized to form a plasma when the microwave power is 700W and the air pressure is 1000Pa. After the plasma is stable, 12vol% CH is filled into the plasma chamber 4 , the deposition of diamond nanofilms can be realized at low temperature.

Embodiment 3

[0010] Embodiment 3: Fill the Ar of 40vol% and the H of 55vol% in the microwave plasma synthesis cavity 2 , so that the gas is ionized to form a plasma when the microwave power is 700W and the air pressure is 1000Pa. After the plasma is stable, fill the plasma chamber with 5vol% CH 4 , the deposition of diamond nanofilms can be realized at low temperature.

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Abstract

The invention is a method for synthesizing diamond membrane at low temperature by microwave plasma, comprising the steps of: charging Ar and H2 gases into a microwave plasma synthesizing cavity; at a microwave power of 600-750W and a gas pressure of 900-1100Pa, ionizing the gases into plasma; when the plasma is stable, charging CH4 gas into the plasma cavity and able to implement deposition of diamond membrane without intensifying external magnetic field. And the method has advantages of simple process, easy to implement, high deposition rate, etc.

Description

technical field [0001] The invention relates to the field of material science, in particular to a method for synthesizing diamond films with microwave plasma at low temperature. Background technique [0002] At present, the method of microwave plasma low-temperature synthesis of diamond film is the electron cyclotron resonance (ECR) method, which uses a magnetic field with a very high magnetic field strength (about 900 Gauss) to confine microwave plasma, and needs to synthesize diamond at a pressure lower than 0.1Pa. Therefore, a low temperature below 250°C can be obtained, but the deposition rate is very slow. In order to achieve a pressure below 0.1Pa, a complex vacuum system is required, which greatly increases the cost of equipment and the cost of diamond synthesis. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a method for synthesizing diamond films with microwave plasma at low temperature, which can reali...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/04C30B23/08C23C16/24C23C16/513
Inventor 周建王琳刘桂珍欧阳世翕
Owner WUHAN UNIV OF TECH
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