Two-dimensional bismuth oxygen selenium atom crystal materials and preparation method and application thereof

Abstract

The invention relates to a preparation method of two-dimensional bismuth oxygen selenium atom crystals. The method comprises the following steps that a precursor containing bismuth elements and selenium elements is subjected to physical vapor deposition, a two-dimensional bismuth oxygen selenium atom crystal material is obtained, and the two-dimensional bismuth oxygen selenium atom crystal material is a tetragonal system. By adopting physical vapor deposition, the problem that the ratio of a bismuth source to a selenium source is not easily controlled in the chemical gas-phase reaction processis solved, the obtained two-dimensional bismuth oxygen selenium atom crystal material is higher in purity, vacancy defects are less, then, the electronic mobility is higher, the electronic mobility is larger than or equal to 135 cm<2> / (V s), meanwhile, compared with chemical vapor deposition, the physical vapor deposition can enable the crystal form integrity of the two-dimensional bismuth oxygenselenium atom crystal material to be higher, the crystal size is larger, the single crystal domain edge can reach the millimeter scale, the maximum single crystal domain edge is not smaller than 1.7mm, and the minimum signed crystal domain edge is not smaller than 200 micrometers.

Description

technical field [0001] The invention belongs to the field of two-dimensional materials, and in particular relates to a two-dimensional bismuth oxygen selenium atomic crystal material, its preparation method and application. Background technique [0002] The progress of modern information technology depends to a large extent on the development of integrated circuits based on semiconductor silicon. At present, due to the limitations of physical laws such as short channel effects and manufacturing costs, the mainstream CMOS (complementary metal oxide semiconductor) technology is about to reach the 10nm technology node, and it is difficult to continue to improve, which also indicates that "Moore's Law" may face end. Therefore, exploring new channel materials and transistor technology with new principles in order to replace silicon-based CMOS technology has always been one of the mainstream research directions in the scientific and industrial circles. [0003] At the same time,...

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Problems solved by technology

[0010] The invention adopts physical vapor deposition, which solves the problem that the ratio of bismuth source and selenium source is not easy to control in the process of chemical vapor phase reaction, and the obtained two-dimensional bismuth oxygen selenium atomic crystal material has higher purity, fewer vacancy defects, and further, electron mobility Higher, electron mobility ≥ 135cm 2 / (V s), at the same time, compared with chemical vapor deposition, physical vapor deposition can make the crystal form of the two-dimensional bismuth oxygen selenium atomic crystal material have higher integrity, larger crystal size, and the side length of single crystal domains can reach millimeter level. Maximum single crystal domain side length ≥ 1.7mm, minimum single crystal domain side length ≥ 200μm

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