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A method for surface modification of high-temperature structural ceramic materials

A ceramic material and surface modification technology, applied in chemical instruments and methods, fibrous fillers, inorganic pigment treatment, etc., can solve the problems of harsh modification conditions, long reaction period, low grafting rate, etc. The effect of improving the interaction force and improving the dispersibility

Active Publication Date: 2020-08-21
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these methods modify the surface of high-temperature structural ceramic materials to a certain extent in varying degrees, thereby realizing the improvement of its different functions, the grafting rate is low (below 10%), the modification conditions are harsh, and the reaction The disadvantage of long cycle limits its development in the actual preparation of inorganic organic nanocomposites

Method used

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  • A method for surface modification of high-temperature structural ceramic materials
  • A method for surface modification of high-temperature structural ceramic materials
  • A method for surface modification of high-temperature structural ceramic materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] (1) Weigh 2.6g of sodium hydroxide and 2.5g of potassium hydroxide, add 500mg of nano-silicon carbide, grind it into a fine powder in a mortar, and mix well. The mixed powder was reacted in a crucible at 170° C. for 5 h, and cooled to room temperature. The mixed powder treated by the solid phase method was dispersed in a certain amount of water, and the mixed solution was treated with an ultrasonic cell pulverizer for 3 hours, and then the supernatant was removed by centrifugation. Wash with distilled water 3 times until the pH of the solution is neutral to obtain pre-hydroxylated silicon carbide.

[0059] (2) In an ice bath, dissolve 10.8 g of p-phenylenediamine in 8 mL of 98% concentrated sulfuric acid and 100 mL of deionized water, and stir until the p-phenylenediamine is completely dissolved. Add 30% sodium nitrite solution dropwise from the liquid surface to the above solution to prepare the corresponding sulfated diazonium salt solution.

[0060] (3) Disperse th...

Embodiment 2

[0062] (1) Weigh 2.9g of sodium hydroxide and 2.5g of potassium hydroxide, add 500mg of nano-silicon carbide, grind it into a fine powder in a mortar, and mix well. Transfer the mixed powder into a 100mL hydrothermal reaction kettle, add 70mL of pure water, react at 180°C for 6h, cool to room temperature, use an ultrasonic cell pulverizer to treat the mixture for 3h, and then centrifuge to remove the supernatant, the lower layer Wash with distilled water 3 times until the pH of the solution is neutral to obtain pre-hydroxylated silicon carbide.

[0063] (2) In an ice bath, dissolve 2.7 g of p-phenylenediamine in 2 mL of 98% concentrated sulfuric acid and 50 mL of deionized water, and stir until the p-phenylenediamine is completely dissolved. Add 30% sodium nitrite solution dropwise from the liquid surface to the above solution to prepare the corresponding sulfated diazonium salt solution.

[0064] (3) Disperse the pre-hydroxylated silicon carbide in step (1) in 100 mL of deio...

Embodiment 3

[0066] (1) Weigh 2.6g of sodium hydroxide and 2.4g of potassium hydroxide, add 500mg of nano-silicon carbide, grind it into a fine powder in a mortar, and mix well. First react the mixed powder in a crucible at 180°C for 3h, then transfer the mixed powder into a 100mL hydrothermal reaction kettle, add 70mL of pure water, and react at 180°C for 6h. After cooling to room temperature, the mixture was treated with an ultrasonic cell pulverizer for 2 hours, then the supernatant was removed by centrifugation, and the lower layer was washed with distilled water for 3 times until the pH of the solution was neutral to obtain pre-hydroxylated nano-silicon carbide.

[0067] (2) In an ice bath, dissolve 5.4 g of p-phenylenediamine in 4 mL of 98% concentrated sulfuric acid and 32 mL of deionized water, and stir until the p-phenylenediamine is completely dissolved. Add 30% sodium nitrite solution dropwise from the liquid surface to the above solution to prepare the corresponding sulfated di...

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Abstract

The invention provides a surface modification method for silicon carbide, boron carbide and silicon nitride which serve as inorganic nanoparticles in a compound ceramic material with a high-temperature structure. The method comprises the following steps: (1) silicon carbide, boron carbide and silicon nitride are subjected to a reaction with a strong basic compound, and unreacted strong basic compound is removed; (2) pre-hydroxylated silicon carbide, boron carbide and silicon nitride are added to a strong acid solution and subjected to a reaction with substituted phenyl sulfated diazonium salt,and surface modified silicon carbide, boron carbide and silicon nitride composition is obtained, wherein the structure of the substituted phenyl sulfated diazonium salt is represented in the description, R is a group selected from NH2-, HO-, HSO3-, halogen and alkyl, R1 is hydrogen, alkyl or alkoxy, and X<-> is the acid radical ion.

Description

technical field [0001] The invention relates to a modification method, in particular to a method for surface modification of high-temperature non-oxides (boron carbide, silicon carbide, silicon nitride) in high-temperature structural ceramic materials. Background technique [0002] High-temperature structural ceramics are ceramics used in certain devices, equipment, or structures that can withstand static or dynamic mechanical loads under high temperature conditions. High-temperature structural ceramics include high-temperature oxides and high-temperature non-oxides (or refractory compounds). Among them, high-temperature non-oxides include boron carbide, silicon carbide, silicon nitride, and boron nitride. They all belong to inorganic non-metallic nanoparticles. In terms of crystal structure, the crystal structure of inorganic nonmetals is far more complex than that of metals, and has no free electrons, and has stronger ionic bonds and mixed bonds than metal bonds and pure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09C1/00C09C1/28C09C3/06C09C3/08C08K3/34C08K9/04
CPCC01P2006/22C08K3/34C08K9/04C09C1/00C09C1/28C09C3/006C09C3/06C09C3/08
Inventor 李化毅王竹君李倩刘腾飞郑水蓉胡友良
Owner INST OF CHEM CHINESE ACAD OF SCI
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