Quantum dot solid film and method for preparing quantum dot solid film and QLED device

A technology of quantum dots and solid films, which is applied in the field of quantum dot film preparation, can solve the problems of blank electrical devices of N-type quantum dot solid films, achieve high fluorescence intensity, increase fluorescence intensity, and change electrical properties.

Inactive Publication Date: 2019-02-05
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a quantum dot solid film and its preparation method, aiming to solve the problem that there is a blank in the electrical device based on the N-type quantum dot solid film due to the lack of mature technology to prepare the N-type quantum dot solid film.

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  • Quantum dot solid film and method for preparing quantum dot solid film and QLED device

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[0033] The embodiment of the present invention provides a method for preparing a quantum dot solid film, the quantum dot solid film is an N-type quantum dot solid film, and the preparation method includes the following steps:

[0034] S01. Provide a kind of P-type quantum dot solid film;

[0035] S02. Soak the P-type quantum dot solid film in a quaternary ammonium halide solution to exchange ligands on the surface of the quantum dots, then dry and wash to obtain the N-type quantum dot solid film.

[0036] Specifically, in the above step S01, the P-type quantum dot solid film can be prepared by the following method:

[0037] Quantum dots are provided, and the surface ligands of the quantum dots are oil phase ligands;

[0038] The quantum dots are configured into a quantum dot solution, deposited on a substrate, and then dried to obtain a P-type quantum dot solid film.

[0039] Wherein, the quantum dots are quantum dots with oil phase ligands on the surface, including binary p...

Embodiment 1

[0083] A preparation method of NPN type quantum dot solid film, comprising the following steps:

[0084] Step 1. provides oil-soluble CdSe quantum dots, and the preparation method of the oil-soluble CdSe quantum dots is as follows:

[0085] Cadmium Oleate Cd(OA) 2 Precursor preparation: Add 2mmol of cadmium oxide, 3ml of oleic acid, and 10ml of octadecene into a three-necked flask, first vacuumize at room temperature for 30mins, heat to 180°C and exhaust argon for 60mins, maintain 180°C for 30mins, cool to room temperature for later use .

[0086] Preparation of selenium (Se) precursor: 4 mmol of Se was added to 4 ml of trioctylphosphine, heated to 170° C. for 30 minutes, and then cooled to 140° C.

[0087] Preparation of CdSe quantum dots: Heating the cadmium oleate precursor to 280°C, then extracting 2ml of the selenium precursor and injecting it into the cadmium oleate precursor to react for 2 minutes. The toluene was subjected to centrifugal separation and drying treatm...

Embodiment 2

[0095] A preparation method of NPN type quantum dot solid film, comprising the following steps:

[0096] Step 1. Preparation of CdTe quantum dots

[0097] Preparation of Cd 2+ CdCl with a concentration of 0.1mol / L 2 Aqueous solution, concentration is the 3-mercaptopropionic acid aqueous solution of 0.2mol / L, standby;

[0098] Freshly prepared NaHTe solution: NaBH with a molar ratio of 4.5:1 4 Dissolve Te powder in ultrapure water and react at room temperature for 5 hours to obtain NaHTe solution;

[0099] Preparation of CdTe: Take 5mL CdCl 2 Solution, 4.5mL of 3-mercaptopropionic acid solution was adjusted to 30mL to make mixed solution A, transferred to a 50mL three-necked flask, adjusted to pH 10.5 with NaOH solution, passed argon gas into the three-necked flask for deoxygenation for 1 hour, and added freshly prepared NaHTe solution 100 μL, stored at 4°C for 17 hours. Add 60 mL of absolute ethanol, centrifuge at 10,000 r / min for 15 min, repeat centrifugation, wash with...

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Abstract

The invention provides a method for preparing a quantum dot solid film, wherein the quantum dot solid film is an N-type quantum dot solid film. The preparation method comprises the steps of providinga P-type quantum dot solid film; immersing the P-type quantum dot solid film in a halogenated hyamine solution to perform quantum dot surface ligand exchange, and then drying and washing to obtain theN-type quantum dot solid film.

Description

technical field [0001] The invention belongs to the technical field of quantum dot film preparation, and in particular relates to a quantum dot solid film, a preparation method thereof, and a QLED device. Background technique [0002] Colloidal quantum dots have good application prospects in the fields of photovoltaics, diodes, and detection due to their low cost, simple processing methods, and bandgap changes with size. When colloidal quantum dots are applied in photovoltaics, diodes, detection and other fields, the preparation of quantum dot films will be involved, and the preparation method and surface treatment of quantum dot solid films have a great influence on the performance of corresponding devices. Generally, the passivation method of quantum dot nanocrystals is to use long-chain hydrocarbon ligands to prepare solid films by solution method, and then use shorter ligands to replace longer ligands, so that the nanoparticles are tightly bonded to each other. Relying ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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