Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A wide-band photodetector of perovskite thin film based on topological insulator bismuth selenide electrode and a preparation method thereof

A photodetector, topological insulator technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of complex graphene electrode fabrication and transfer process, hindering charge carrier transport, and poor flexibility of ITO electrodes. , to achieve the effect of long charge diffusion length, low defect density and good device performance

Active Publication Date: 2019-01-18
HEFEI UNIV OF TECH
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The selection of electrode materials plays an important role in photodetectors. Traditional photodetector electrode materials, such as noble metals such as gold, silver, and platinum, are expensive, and there are considerable dangling bonds on their irregular surfaces, which may lead to Severe carrier scattering and impeded transport of charge carriers
At present, some oxide electrodes (such as ITO) or graphene electrodes are more and more applied to optoelectronic devices because of their own advantages, but due to the poor flexibility of ITO electrodes and low transmittance in the infrared region, the production of graphene electrodes The complexity of the transfer process also limits the application of both

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A wide-band photodetector of perovskite thin film based on topological insulator bismuth selenide electrode and a preparation method thereof
  • A wide-band photodetector of perovskite thin film based on topological insulator bismuth selenide electrode and a preparation method thereof
  • A wide-band photodetector of perovskite thin film based on topological insulator bismuth selenide electrode and a preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] See figure 1 , The photodetector of the present invention is provided with Bi on the sapphire substrate 1 2 Se 3 Thin film electrode 2, in Bi 2 Se 3 A layer of FA is provided on the film electrode 2 0.85 Cs 0.15 PbI 3 Perovskite film 3.

[0032] Specifically: Bi in this embodiment 2 Se 3 The thin-film electrode first grows a layer of Bi on a sapphire substrate by molecular beam epitaxy. 2 Se 3 The thin film is then etched by ultraviolet exposure lithography and oxygen plasma cleaning machine to remove Bi 2 Se 3 The thin film is etched into the required electrode pattern to obtain. Bi 2 Se 3 The thickness of the thin film electrode is between 80 and 90 nm.

[0033] Specifically: FA in this embodiment 0.85 Cs 0.15 PbI 3 The perovskite film is made of lead iodide PbI 2 , Cesium iodide CsI, formamidine hydroiodic acid FAI dissolved in dimethyl sulfoxide DMSO and N, N-dimethylformamide DMF to form a precursor solution, through the homogenizer in the growth of Bi 2 Se 3 The thin-fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a wide-band photodetector of A perovskite thin film based on A topological insulator bismuth selenide electrode and a preparation method thereof. A Bi2Se3 thin film electrode is arranged on a sapphire substrate, and a layer of FA0. 85Cs0. 15PbI3 perovskite thin film is arranged on that Bi2Se3 thin film electrode. The invention utilizes the characteristic of large specific surface area of perovskite thin film and the special conductive surface state of topological insulator, a The response of the photodetector is sensitive in the range of UV- visible-near infrared light.The detector of the invention has simple preparation process and good device performance, and opens up new prospects for the application of topological insulator material in photoelectric detectors.

Description

Technical field [0001] The invention belongs to the field of semiconductor photodetectors, and specifically relates to a topological insulator Bi 2 Se 3 A wide-band high-performance photodetector with perovskite film electrodes. Background technique [0002] Photodetectors are widely used in optical communications, imaging, and biosensing because they can convert optical signals into electrical signal output. The selection of electrode materials plays an important role in photodetectors. Traditional photodetector electrode materials such as precious metals gold, silver, platinum, etc. are expensive, and there are quite large dangling bonds on their irregular surfaces, which may lead to Severe carrier scattering and hinder the transport of charge carriers. At present, some oxide electrodes (such as ITO) or graphene electrodes are increasingly used in optoelectronic devices due to their own advantages. However, due to the poor flexibility of ITO electrodes and low transmittance in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/12H10K85/30H10K30/00H10K30/81Y02E10/549
Inventor 梁凤霞梁林赵兴远罗林保张致翔
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com