A p-i-n structure ultraviolet detector based on GaN material and a preparation method thereof

Abstract

The invention discloses a GaN material-based p-I-N-structure ultraviolet detector and preparation method thereof, and p-type ultraviolet detector based on GaN material. The p-i-n-structure ultraviolet detector device comprises a substrate, a transition layer, a buff layer, an n-type layer, an n- I sandwich, i-type layer, i- P-interlayer, p-type layer, n-type electrode, p-type electrode, protective layer, p-I n-structure ultraviolet detector manufacturing method of an comprises prepare a substrate, preparing a transition layer and a buffer lay, and preparing a p-type ultraviolet detector. I-N structure preparation, protective layer preparation, electrode preparation. It is an object of the present invention to solve the problem that the dark current affects the reliability and performance thereof due to the dislocation density, Through the self-supporting GaN substrate, Two interlayers and electrode annealing process to reduce the dislocation density, improve the optical absorption,thereby reducing dark current, secondary current and improve the carrier efficiency, provides a more reliable, more effective reduction of dislocation density, more effective reduction of dark current, carrier efficiency based on GaN material p- i-n -structure ultraviolet detector and a preparation method thereof.

Description

technical field [0001] The invention relates to the field of photoelectric sensors, in particular to a GaN material-based P-I-N structure ultraviolet detector and a preparation method thereof. Background technique [0002] The ultraviolet detector can convert the electromagnetic signal it receives into other signals that are easier to receive, transmit and process. The materials for making ultraviolet detectors must meet certain requirements in terms of band gap, thermal conductivity, and electron saturation velocity, otherwise, the manufactured ultraviolet detectors will be difficult to meet the needs of use. Because of its large band gap, high thermal conductivity and fast electron saturation, GaN material has become the preferred material for making p-i-n structure ultraviolet detectors, and has been widely used in the field of ultraviolet detector production. The detector has the characteristics of simple manufacturing process, low capacitance and good performance. [...

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the dislocation density of the p-i-n structure ultraviolet detector causes dark current to affect its reliability and performance, and to provide a more reliable, more effective reduction of dislocation density, and a more effective reduction of dark current , p-i-n structure ultraviolet detector based on GaN material with high carrier efficiency and preparation method thereof

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