Total dose radiation resistant strengthening method of a flash memory

Abstract

The invention provides a total dose radiation resistant strengthening method of a flash memory, which comprises the following steps of: 1, providing a flash memory array and a monitoring memory arrayadjacent to the flash memory array; 2, when that flash memory array does not work, closing the connection between the flash memory array and the peripheral circuit, so that the monitor memory array starts to work, and applying a read voltage to the grid of the monitoring array unit; 3, comparing the total current output of the bit line of the monitoring memory array with a reference current threshold; 4, judging the comparison result, and if the total current of the bit line is less than the reference current, reading the monitor memory array again after a fixed time interval; if the total bitline current is greater than or equal to the reference current, performing a refresh operation on the flash memory array and the monitor memory array. The invention can detect leakage current by monitoring the magnitude of the bit line current of the memory array, and improve the total dose radiation resistance ability of the memory array.

Description

technical field [0001] The invention relates to the technical field of digital circuits, in particular to a method for hardening a flash memory against total dose radiation. Background technique [0002] Flash memory (Flash) memory has the advantages of online programming, data information will not be lost when power is turned off, high read and write speed, and good vibration resistance. In recent years, it has been widely used in aerospace electronic systems. Various high-energy particles in space will seriously affect various electronic components including Flash memory, causing various radiation effects. Among them, the total dose effect is one of the most important problems that Flash memory needs to face in space applications. [0003] The total dose effect is the ionizing radiation effect of cumulative dose, which is a process in which long-term radiation dose accumulation leads to device failure. The damage mechanism of the total dose effect on the device is mainly...

AI Technical Summary

Problems solved by technology

However, EDAC can only find and correct the error after the circuit makes an error, and cannot find the error in advance, and when the storage circuit has a multi-bit storage data error due to the influence of the total dose of radiation, the EDAC circuit automatically corrects one error and detects two errors. The function is obviously insufficient

In addition, since all functions of EDAC are automatically completed by hardware design, it needs to occupy a large chip area

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