A Method for Making Ultra-narrow Line Width and Line Distance Pattern of Metallized Ceramic Substrate

A technology of metallized ceramics and ultra-narrow line width, which is applied in the fields of removing conductive materials by chemical/electrolytic methods, removing conductive materials by mechanical methods, and manufacturing printed circuits. and other problems to achieve the effect of fast processing speed, high efficiency and saving equipment investment

Inactive Publication Date: 2019-01-11
桑尼维尔新材料科技(南京)有限公司
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the traditional chemical etching existing in the prior art is no longer suitable for processing lines with a metallization thickness of more than 400um ceramic substrates, the phenomenon of side erosion is particularly serious, and the dimensional accuracy and error cannot be estimated. The present invention provides a super Narrow Line Width, Line Space Graphics Method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Method for Making Ultra-narrow Line Width and Line Distance Pattern of Metallized Ceramic Substrate
  • A Method for Making Ultra-narrow Line Width and Line Distance Pattern of Metallized Ceramic Substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] like figure 1As shown, this case is used for the AlN-DBC ultra-narrow line spacing method, including the following steps: (process flow is as follows figure 1 shown)

[0042] S1. Process the designed graphics on the AlN-DBC copper surface by laser etching to realize the incomplete Etching, graphic line width and line spacing are 100μm, laser etching depth is 250μm±30μm.

[0043] S2. Print the organic anti-corrosion paste on the upper part of the etched figure by a screen printing machine, and the thickness of the printing paste is about 20 μm. The organic corrosion resist paste in this embodiment is green solder resist ink.

[0044] S3, curing the anti-corrosion slurry covering the graphic surface by drying.

[0045] S4, and then chemical etching is used to etch away the remaining metal copper at the bottom of the wire groove to achieve complete etching, and the chemical etching solution is hydrochloric acid and sodium chlorate.

[0046] S5, passing the chemically ...

Embodiment 2

[0048] This case is used for Al 2 o 3 -DBC ultra-narrow line width and line spacing method, comprising the following steps:

[0049] S1. Al with specifications of 127mm*127mm*1.00mm (copper specification 124mm*124mm*0.60mm) 2 o 3 -DBC ceramic substrate, the designed graphics are placed on Al by mechanical processing 2 o 3 - The copper side of the DBC is machined out for incomplete etching. The graphic line width and line spacing are 300μm, and the machining depth is 550μm±30μm.

[0050] S2. Printing the organic anti-corrosion paste on the upper part of the etched figure by a screen printing machine. The printing paste thickness is about 20 μm. Here, the organic anti-corrosion slurry is a revision ink.

[0051] S3, curing the anti-corrosion slurry covering the graphic surface by drying.

[0052] S4, and then remove the metal copper remaining at the bottom of the line groove by chemical etching to achieve complete etching, and the chemical etching solution is hydrochlor...

Embodiment 3

[0055] This case is used for Si3N4-AMB ultra-narrow line width and line spacing method, including the following steps:

[0056] S1. Machining the Si3N4-AMB ceramic substrate with specifications of 127mm*127mm*0.32mm (copper specification 124mm*124mm*0.40mm) on the copper surface of Si3N4-AMB by mechanical processing to realize incomplete etch. The graphic line width and line spacing are 200μm, and the machining depth is 350μm±30μm.

[0057] S2. Printing the organic anti-corrosion paste on the upper part of the etched figure by a screen printing machine. The printing paste thickness is about 20 μm. Here the organic corrosion resist paste is solder resist ink.

[0058] S3, curing the anti-corrosion slurry covering the graphic surface by drying.

[0059] S4, and then remove the residual metal copper at the bottom of the wire groove by chemical time to achieve complete etching.

[0060] S5 , removing the corrosion-resistant slurry from the chemically etched ceramic substrate ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for manufacturing ultra-narrow line width and line distance pattern of a metallized ceramic substrate, belonging to the field of power electronic device packaging. Inthe normal production process of metallized ceramic substrate, because the circuit pattern needs to be processed on the ceramic substrate, there will inevitably be an etching process. When the thickness of copper reaches more than 300 [mu]m m, the line width and the line distance of the pattern are guaranteed to be more than 500 [mu]m m. However, in the high-end electronic packaging field, the linewidth is required to be less than 100 [mu]m m, which limits the application of metallized ceramic substrate in these high-end electronic packaging fields. As to the phenomenon, the invention providea circuit pattern ultra-narrow linewidth for fabricating a metallized ceramic substrate, In the scheme, the metallization layer is etched by laser etching and chemical etching, so that the fine line width and line distance are etched, the lower limit value and precision of line width and line distance are greatly improved, and the application field of metallization ceramic substrate is widened.

Description

technical field [0001] The invention relates to the field of packaging of power electronic devices, and more specifically relates to a method for making ultra-narrow line width and line space patterns on metallized ceramic substrates. Background technique [0002] In the normal production process of metallized ceramic substrate products, due to the need to process circuit patterns on the ceramic substrate, there will inevitably be an etching process in the mass production process. , development, etc. to transfer the pattern to the metallization layer, and then etch the pattern through chemical etching. [0003] Technical defect: the thickness of the metallization layer exceeds 100 μm, and the line width and line spacing guaranteed by conventional chemical etching are about 200 μm. After the thickness of the metallization layer reaches 300 μm, the line width and line spacing guaranteed by chemical etching are 500 μm. When the thickness reaches 700 μm or even thicker, traditi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H05K3/04H05K3/02H05K3/06
CPCH05K3/04H05K3/027H05K3/061H05K2203/0369H05K2203/107H05K2203/1476
Inventor 梅泽群井敏
Owner 桑尼维尔新材料科技(南京)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap