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A method for preparing a flexible thermoelectric thick film material with excellent electrical transport performanceby adding a sintering aid

A technology of thermoelectric materials and sintering aids, which is applied in the manufacture/processing of thermoelectric devices, etc., can solve the problems of inability to fully meet the requirements of thermoelectric refrigeration devices, deterioration of electrical properties of thermoelectric thick films, leaving holes and cracks, etc., and achieves the preparation method. Simple and controllable, the effect of improving electrical transport performance and reducing contact resistance

Active Publication Date: 2019-01-11
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermoelectric paste for printing must be added with polymer resin to ensure the stability and printability of the paste, and the decomposition and volatilization of organic matter brought about by the subsequent heat treatment process will leave defects such as holes and cracks inside the thick film. The organic matter remaining in the thermoelectric thick film will hinder the carrier transport, resulting in the deterioration of the electrical properties of the thermoelectric thick film
Around this problem, relevant researchers have performed cold isostatic pressing on the heat-treated thick film or hot-pressing it during the heat treatment process to improve its electrical transport performance, but it still cannot fully meet the requirements of thermoelectric cooling devices.

Method used

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  • A method for preparing a flexible thermoelectric thick film material with excellent electrical transport performanceby adding a sintering aid
  • A method for preparing a flexible thermoelectric thick film material with excellent electrical transport performanceby adding a sintering aid
  • A method for preparing a flexible thermoelectric thick film material with excellent electrical transport performanceby adding a sintering aid

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Add 0.3wt% Sn 42 Bi 58 Preparation of Bi by sintering aid 0.5 Sb 1.5 Te 3 Based thermoelectric composite thick film, comprising the following steps:

[0031] 1) the p-type Bi 0.5 Sb 1.5 Te 3 The ingot is broken, ground, and passed through a 120-mesh sieve to obtain a ready-to-use powder with a particle size of less than 120 μm;

[0032] 2) Calculate and weigh the above Bi according to the mass percentage 0.5 Sb 1.5 Te 3 Powder 9.97g and sintering aid Sn 42 Bi 58 Add 0.03g of alloy powder into a high-energy ball mill tank with a ball-to-material ratio of 55:1, add 50ml of absolute ethanol as a ball mill medium, and put Ar atmosphere protection after vacuuming. The ball milling process parameters are ball milling speed 200r / min, ball milling time 24h;

[0033] 3) The ball-milled powder was centrifuged at a speed of 4000r / min for 10min, the lower layer of slurry was removed, and vacuum-dried in a vacuum oven at 60°C for 2h to obtain a powder containing 0.3wt% ...

Embodiment 2

[0039] Add 1.5wt% Sn 42 Bi 58 Preparation of Bi by sintering aid 0.5 Sb 1.5 Te 3 Based thermoelectric composite thick film, comprising the following steps:

[0040] p-type Bi 0.5 Sb 1.5 Te 3 The ingot is broken, ground, and passed through a 120-mesh sieve to obtain a ready-to-use powder with a particle size of less than 120 μm;

[0041] Calculate and weigh the above Bi according to the mass percentage 0.5 Sb 1.5 Te 3 Powder 9.85g and sintering aid Sn 42 Bi 58 Add 0.15g of alloy powder into a high-energy ball mill tank with a ball-to-material ratio of 55:1, add 50ml of absolute ethanol as a ball mill medium, and put Ar atmosphere protection after vacuuming. The ball milling process parameters are ball milling speed 200r / min, ball milling time 24h;

[0042] The ball-milled powder was centrifuged at a speed of 4000r / min for 10min, the lower layer of slurry was removed, and vacuum-dried in a vacuum oven at 60°C for 2h to obtain a powder containing 1.5wt% Sn 42 Bi 58...

Embodiment 3

[0048] Preparation of Bi by adding 1wt% bismuth telluride nanowire sintering aid 0.5 Sb 1.5 Te 3 Based thermoelectric composite thick film, comprising the following steps:

[0049] 1) Preparation of Bi 2 Te 3 Nanowires

[0050] Weigh 0.1g SDS, 0.0183g Na 2 TeO 3 and 0.0150 g NaBH 4 , dissolved in 100mL water successively under magnetic stirring to form a homogeneous solution. Under the condition of ice-water bath, Na 2 TeO 3 and NaBH 4 The solution was added dropwise into the SDS solution and stirred continuously, the solution gradually turned black, and a dispersion of Te crystal seeds was obtained;

[0051] Mix 1g PVP K90 and 0.25g Na 2 TeO 3 Dissolve in 70mL of water, obtain a clear solution under magnetic stirring, transfer it with 10mL Te seed crystal dispersion and 1.5mL hydrazine hydrate solution into a stainless steel reaction kettle lined with polytetrafluoroethylene, and place it in a high-temperature furnace at 145°C to keep warm After 72 hours, the rea...

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Abstract

A method for preparing a flexible thermoelectric thick film material with excellent electric transport performance by adding a sintering aid includes such steps as 1) uniformly mixing that thermoelectric material powder and the sintering aid to obtain a mixed powder, adding a sintering aid to the thermoelectric thick film material, adding a sintering aid to the thermoelectric thick film material,adding a sintering aid to the thermoelectric thick film material, and adding a sintering aid to the thermoelectric thick film material. 2) dissolving that polymer resin in an appropriate solvent to obtain a solution of the polymer resin; 3) uniformly mix that mixed powder and the polymer resin solution to prepare a thermoelectric slurry; 4) prin that thermoelectric paste onto a substrate by a printing method; 5) level that wet film of the slurry, drying and sinter. The invention has the advantages that the sintering aid is environmentally friendly and low in price, the electric transport performance of the flexible thermoelectric thick film material can be remarkably improved by adding the sintering aid, the preparation method of the thermoelectric thick film material is simple and controllable, the preparation period is short, the sintering aid is suitable for industrial production, and the development of the in-plane flexible thermoelectric device is expected to be promoted.

Description

technical field [0001] The invention relates to a method for preparing a flexible thermoelectric thick film material, in particular to a method for preparing a flexible thermoelectric thick film material with excellent electrical transport performance by adding a sintering aid. Background technique [0002] Thermoelectric materials are new energy materials that can realize direct conversion of thermal energy and electrical energy. They have important applications in industrial waste heat thermoelectric power generation, solar thermoelectric-photoelectric hybrid power generation, deep space / deep sea power, small temperature difference power generation, and thermoelectric refrigeration. As microelectronic integrated devices are widely used in high-power processors and terminal equipment, the heat dissipation of high-power-density hotspots urgently requires the development of efficient thermal management solutions. Thermoelectric refrigeration technology based on the Peltier ef...

Claims

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Application Information

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IPC IPC(8): H01L35/34
CPCH10N10/01
Inventor 赵文俞田烨聂晓蕾张清杰朱婉婷魏平孙志刚李鹏方文兵
Owner WUHAN UNIV OF TECH
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