An igbt with robust short-circuit withstand capability

A powerful, robust technology applied to IGBTs. field, it can solve the problems such as the decrease of device short-circuit turn-off capability and the decrease of short-circuit withstand capacity, and achieve the effects of improving short-circuit withstand capacity, reducing short-circuit current, and reducing conduction voltage

Active Publication Date: 2020-05-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above, the present invention aims at the existing discrete floating P-region trench gate IGBT devices, which have problems such as the storage of holes in the FP region, resulting in a decrease in the short-circuit turn-off capability of the device and a reduction in the short-circuit withstand capability, and proposes a stable short-circuit withstand capability. capacity IGBT

Method used

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  • An igbt with robust short-circuit withstand capability
  • An igbt with robust short-circuit withstand capability
  • An igbt with robust short-circuit withstand capability

Examples

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Embodiment

[0037] An IGBT with robust short-circuit withstand capability, such as figure 2 As shown, its cellular structure includes metal collector 7, P+ collector region 6, N-type buffer layer 5, N-drift region 4 and metal emitter 11 stacked sequentially from bottom to top; the N-drift region 4 The middle area of ​​the top layer is provided with a discrete P+ floating pbody area 8, the two sides of the discrete P+ floating pbody area 8 are respectively provided with a P+ base area 2, and the top layer of the P+ base area 2 is provided with an N+ emission area 1; The P+ base region 2 and the N+ emitter region 1 are in contact with the discrete P+ floating pbody region 8 through the metal emitter 11; a gate is provided between the P+ base region 2 and the N+ emitter region 1 and the discrete P+ floating pbody region 8 structure, the gate structure includes a gate electrode 9 and a gate dielectric layer 3, the gate dielectric layer 3 extends into the N-drift region 4 along the vertical d...

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Abstract

The invention discloses an IGBT with stable short-circuit bearing capacity, belonging to the technical field of power semiconductor devices. A JFET structure (13), (14), (15) equivalent to a variableresistance and a diode N-type region (16), a diode P-type region (17) are introduced into a discrete floating pbody region (8) of a conventional IGBT device; holes are stored during normal conductionof the device, a hole drain path is provided during short-circuit conduction and short-circuit shutdown, holes are quickly drained and short-circuit current during short-circuit conduction is reduced;The JFET gate (14) is connected with the IGBT gate (9) through a reverse voltage withstand diode, thereby reducing the leakage current at the JFET gate during the short circuit process, inhibiting the start-up of the parasitic transistor, satisfying the application requirements of the positive and negative gate voltage drive, and significantly improving the gate control and short-circuit shutdowncapability of the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to an IGBT with stable short-circuit withstand capability. Background technique [0002] With the rapid development of high-speed railways, smart grids, new energy vehicles and other fields, insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBT) rely on easy gate drive, high input impedance, fast switching speed, high current density, saturation With the advantages of voltage drop, it has become one of the mainstream power switching devices in the medium and high power range; at the same time, it will continue to develop in the direction of high voltage, high current, high operating temperature and high reliability. IGBT device technology has been listed as a major by the country. Research on special topics. [0003] In the application of high-voltage IGBT devices, especially in the process of motor driving, the two ends of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/423H01L29/06
CPCH01L29/0619H01L29/4236H01L29/7397
Inventor 李泽宏彭鑫赵一尚贾鹏飞杨洋
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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