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Preparation method of GaN-based HEMT gold-free ohmic contact electrode based on TiN

A technology of ohmic contact electrodes and source-drain electrodes, which is applied to circuits, electrical components, metal material coating processes, etc., to achieve the effects of reducing process temperature and process complexity, reducing manufacturing costs, and improving compatibility

Active Publication Date: 2018-12-18
ZHONGSHAN INST OF MODERN IND TECH SOUTH CHINA UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The deposition of TiN thin films by low-temperature magnetron sputtering can effectively solve a series of problems caused by high-temperature deposition processes.

Method used

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  • Preparation method of GaN-based HEMT gold-free ohmic contact electrode based on TiN
  • Preparation method of GaN-based HEMT gold-free ohmic contact electrode based on TiN
  • Preparation method of GaN-based HEMT gold-free ohmic contact electrode based on TiN

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Embodiment 1

[0034] Such as Figure 1 ~ Figure 3 Shown, a kind of preparation method of GaN-based HEMT without gold ohmic contact electrode based on TiN, the steps are as follows:

[0035] Step 1, source-drain electrode pattern. A gold-free source-drain electrode pattern region 5 is defined on the GaN-based epitaxial layer 1 by a photolithography process, and a photolithography mask 6 covers areas other than the gold-free source-drain electrode pattern region 5 on the GaN-based epitaxial layer 1, such as figure 2 shown.

[0036] Step two, surface treatment. Surface treatment is performed on the source-drain electrode pattern area 5, and the surface oxide at the source-drain electrode pattern 5 is cleaned with dilute hydrochloric acid solution;

[0037]Step 3, depositing electrode materials. The gold-free source-drain electrode metal layer is deposited by magnetron sputtering. Specifically, the gold-free source-drain electrode metal layer is Ti metal sputtered on the surface of the sam...

Embodiment 2

[0043] Step 1, source-drain electrode pattern. A gold-free source-drain electrode pattern region 5 is defined on the GaN-based epitaxial layer by photolithography, and a photolithographic mask 6 covers the GaN-based epitaxial layer 1 except for the gold-free source-drain electrode pattern region 5 .

[0044] Step two, surface treatment. Surface treatment is performed on the source-drain electrode pattern area 5, and the surface oxide at the source-drain electrode pattern area 5 is cleaned with dilute hydrochloric acid solution;

[0045] Step 3, depositing electrode materials. The gold-free source-drain electrode metal layer is deposited by magnetron sputtering. Specifically, the gold-free source-drain electrode metal layer is Ti metal sputtered on the surface of the sample prepared in step 2 sequentially by magnetron sputtering. 2. Al metal 3 and TiN metal 4 have a thickness of 20nm, 100nm and 100nm respectively, forming a Ti / Al / TiN multilayer metal system. Among them, the ...

Embodiment 3

[0050] Step 1, source-drain electrode pattern. A gold-free source-drain electrode pattern region 5 is defined on the GaN-based epitaxial layer by photolithography, and a photolithographic mask 6 covers the GaN-based epitaxial layer 1 except for the gold-free source-drain electrode pattern region 5 .

[0051] Step two, surface treatment. Surface treatment is performed on the source-drain electrode pattern area 5, and the surface oxide at the source-drain electrode pattern area 5 is cleaned with dilute hydrochloric acid solution;

[0052] Step 4, depositing electrode materials. Deposit the gold-free source-drain electrode metal layer by magnetron sputtering. Specifically, the gold-free source-drain electrode metal layer is the Ti metal 2, Al metal 3 and TiN metal 4 have a thickness of 20nm, 100nm and 100nm respectively, forming a Ti / Al / TiN multilayer metal system. Among them, the low-temperature magnetron sputtering TiN thin film is deposited by reactive magnetron sputtering,...

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Abstract

The invention discloses a preparation method of a GaN-based HEMT gold-free ohmic contact electrode based on TiN. The method comprises the following steps: photolithography forming a source-drain electrode pattern; Surface treatment of GaN-based epitaxy at source-drain electrode pattern; Depositing a metal layer without a gold source drain electrode, and stripping to form a source drain electrode;GaN-based HEMT deposited with source and drain electrodes was annealed to form gold-free source and drain ohmic contact electrodes. A low-temperature magnetron sputter TiN film is adopted, TiN was recrystallized and reacted with other electrode metals by post-annealing alloys, The conductivity of low-temperature sputtered TiN is greatly improved and the process of preparing TiN thin film at high temperature is avoided, which is beneficial to reduce the process temperature, simplify the process flow, improve the process compatibility and reduce the manufacturing cost of a GaN-based HEMT device.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a method for preparing a TiN-based GaN-based HEMT gold-free ohmic contact electrode, and the gold-free ohmic contact electrode can be used in fields such as power electronics and microwave communication. Background technique [0002] GaN-based high electron mobility transistors (HEMTs) have broad application prospects in the fields of high-voltage, high-frequency, high-power semiconductor laser devices and high-performance ultraviolet detectors. However, high cost limits the wide application of HEMT devices. One way to reduce the manufacturing cost of HEMTs is to realize mass production of HEMTs in Si‐CMOS process lines. High-quality ohmic contacts are a key factor in ensuring optimal device performance of HEMTs. The gold contact metal used in the ohmic and Schottky contact processes of conventional HEMT devices will cause Au to pollute the CMOS process lines. Therefore, HEMT gold-fre...

Claims

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Application Information

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IPC IPC(8): H01L21/285H01L21/335C23C14/06C23C14/35C23C14/58
CPCC23C14/0641C23C14/35C23C14/5806H01L21/28575H01L29/66462
Inventor 王洪李祈昕周泉斌
Owner ZHONGSHAN INST OF MODERN IND TECH SOUTH CHINA UNIV OF TECH
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