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Terbium gallium silicate magneto-optic piezoelectric crystal and growth method thereof

A piezoelectric crystal and crystal growth technology, applied in the field of gallium terbium silicate magneto-optical piezoelectric crystal and its growth, to achieve excellent magneto-optical effect, excellent physical properties, and good application prospects

Inactive Publication Date: 2018-12-04
安徽科瑞思创晶体材料有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Piezoelectricity and magneto-optic are two important features of crystals. In the prior art, there is no crystal structure with both magneto-optic and piezoelectric features.

Method used

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  • Terbium gallium silicate magneto-optic piezoelectric crystal and growth method thereof
  • Terbium gallium silicate magneto-optic piezoelectric crystal and growth method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Press Tb 3 Ga 5 SiO 14 The stoichiometric ratio is accurately weighed and the purity is greater than 99.99% Tb 4 o 7 , SiO 2 and Ga 2 o 3 , considering Ga 2 o 3 Volatile, Ga 2 o 3 2% excess is required, the above raw materials are put into a mixer, mixed and ground evenly, pressed into tablets, and then sintered at high temperature to obtain the initial raw materials required for crystal growth. In the crystal pulling furnace, the single crystal was pulled under the protective atmosphere of the mixed gas of high-purity N and O. The pulling speed was 0.4 mm / h, and the rotation speed was 5.5 r / min; the growth time was 6 days, and the direct growth of Magneto-optic piezoelectric crystal of gallium terbium silicate with a thickness of 30 mm and a thickness of 60 mm; when the crystal growth is completed, the crystal is lifted to 4 mm above the surface of the melt, and then slowly annealed to room temperature with a cooling rate of 20°C / h, that is, Gallium terbium ...

Embodiment 2

[0018] Press Tb 3 Ga 5 SiO 14 The stoichiometric ratio is accurately weighed and the purity is greater than 99.99% Tb 4 o 7 , SiO 2 and Ga 2 o 3 , considering Ga 2 o 3 Volatile, Ga 2 o 3 2% excess is required, the above raw materials are put into a mixer, mixed and ground evenly, pressed into tablets, and then sintered at high temperature to obtain the initial raw materials required for crystal growth. In the crystal pulling furnace, the single crystal was pulled under the protective atmosphere of the mixed gas of high-purity N and O, the pulling speed was 2 mm / h, and the rotation speed was 10 r / min; the growth time was 15 days, and the grown directly Magneto-optic piezoelectric crystal of gallium terbium silicate with a length of 75 mm and a length of 100 mm; when the crystal growth is completed, the crystal is lifted to 5 mm above the surface of the melt, and then slowly annealed to room temperature with a cooling rate of 10°C / h to obtain silicon gallium terbium m...

Embodiment 3

[0020] Press Tb 3 Ga 5 SiO 14 The stoichiometric ratio is accurately weighed and the purity is greater than 99.99% Tb 4 o 7 , SiO 2 and Ga 2 o 3 , considering Ga 2 o 3 Volatile, Ga 2 o 3 2% excess is required, the above raw materials are put into a mixing device, mixed and ground evenly, pressed into tablets, and then sintered at high temperature to obtain the initial raw materials required for crystal growth. In the crystal pulling furnace, the single crystal was pulled under the protective atmosphere of the mixed gas of high-purity N and O, the pulling speed was 3.2 mm / h, and the rotation speed was 14 r / min; the growth time was 16 days, and the direct 85mm Terbium gallium silicate magneto-optic piezoelectric crystal with a length of 150mm; when the crystal growth is completed, the crystal is lifted to 7mm above the melt surface, and then slowly annealed to room temperature with a cooling rate of 15°C / h to obtain gallium silicate The terbium magneto-optic piezoelec...

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Abstract

The invention belongs to the technical field of magneto-optic piezoelectric crystal growth and specifically relates to a terbium gallium silicate magneto-optic piezoelectric crystal and a growth method thereof. The terbium gallium silicate magneto-optic piezoelectric crystal has a molecular formula Tb3Ga5SiO14. The preparation method comprises the following steps: (1) synthesis of initial raw materials; (2) single crystal growth; and (3) crystal annealing. By using the preparation method, the terbium gallium silicate magneto-optic piezoelectric crystal with high optical quality, relatively large size and good physical properties can be obtained. The magneto-optic crystal has good magneto-optic and piezoelectric effects and has a Verdet constant being higher than that of a terbium-doped glass and terbium gallium garnet (TGG) crystal commercially applied at present. Meanwhile, the magneto-optic piezoelectric crystal disclosed by the invention is on a 400-1500 nm waveband and shows relatively high transmittance on other wavebands except for a 485 nm waveband near where there is a characteristic absorption peak of Tb<3+> ions. In addition, the magneto-optic piezoelectric crystal disclosed by the invention is a congruent molten compound capable of growing by adopting a medium-frequency induction pulling method, and the growth process is simple, short in period and capable of realizing large-scale mass production with low cost.

Description

technical field [0001] The invention belongs to the technical field of growth of magneto-optical piezoelectric crystals, and in particular relates to a magneto-optic piezoelectric crystal of gallium terbium silicate and a growth method thereof. Background technique [0002] There is an interesting class of crystals that, when you squeeze or stretch them, generate different charges at each end. This effect is called piezoelectric effect. A crystal that can produce a piezoelectric effect is called a piezoelectric crystal. Crystal (α-quartz) is a well-known piezoelectric crystal. Common piezoelectric crystals include sphalerite, boborite, tourmaline, zincite, GaAs, barium titanate and its derivative structure crystals, KH2PO4, NaKC4H4O6·4H2O (Roch salt), sugar, etc. There is also a kind of crystal called magneto-optic crystal. Magneto-optic crystal is an important class of optoelectronic functional materials. Using its own unique Faraday effect, it can be used to make optica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/34C30B15/00C30B33/02
CPCC30B15/00C30B29/34C30B33/02
Inventor 罗毅
Owner 安徽科瑞思创晶体材料有限责任公司
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