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A dielectric thin film with ultra-high discharge energy storage density and its preparation method

A technology of energy storage density and dielectric thin film, which is applied in the direction of fixed capacitor dielectric, fixed capacitor components, circuits, etc., can solve the problems of complicated film capacitor technology and the inability to greatly reduce the production cost, and achieve the improvement of energy storage density, The effect of improving the withstand voltage strength and simplifying the process

Active Publication Date: 2021-06-22
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although lead-free systems such as barium titanate-based energy storage films have also received a lot of attention, for example, the highest energy storage density of 124J / cm can be obtained by stacking breakdown-resistant sublayers on both sides of the barium titanate film. 3 (the patent publication number is CN101728089A), but its laminated structure further complicates the process of film capacitors, making the preparation cost unable to be greatly reduced. Therefore, it is necessary to develop a new high-energy-storage-density film material with simple molding process and low raw material prices. very necessary

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  • A dielectric thin film with ultra-high discharge energy storage density and its preparation method
  • A dielectric thin film with ultra-high discharge energy storage density and its preparation method
  • A dielectric thin film with ultra-high discharge energy storage density and its preparation method

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Embodiment 1

[0032] A dielectric thin film with ultra-high discharge energy storage density, its expression is BiMg 0.5 Ti 0.5 o 3 .

[0033] The preparation method of the above-mentioned dielectric thin film with ultra-high discharge energy storage density comprises the following steps:

[0034] (1) Weigh Bi(NO 3 ) 3 ·5H 2 O, Mg(CH 3 COO) 2 4H 2 O, C 16 h 36 o 4 Ti raw material, the prepared raw material is dissolved in a mixed solvent of acetic acid, distilled water, acetylacetone and ethylene glycol methyl ether with a volume ratio of 11:2:1:35, and stirred at room temperature 25°C for 24 hours to obtain a stable precursor body solution;

[0035] (2) Aging the precursor solution obtained in step (1) at room temperature for 24 hours to obtain a uniformly dispersed sol for spin coating;

[0036] (3) Add the sol obtained in step (2) dropwise on the substrate at a low speed of 800 rpm by spin coating, and then shake off the sol at a high speed of 4600 rpm to obtain a wet gel wi...

Embodiment 2

[0042] A dielectric thin film with ultra-high discharge energy storage density, its expression is BiMg 0.5 Ti 0.55 o 3 .

[0043] The preparation method of the above-mentioned dielectric thin film with ultra-high discharge energy storage density comprises the following steps:

[0044] (1) Weigh Bi(NO 3 ) 3 ·5H 2 O, Mg(CH 3 COO) 2 4H 2 O, C 16 h 36 o 4 Ti raw material, the prepared raw material was dissolved in a mixed solvent of acetic acid, distilled water, acetylacetone and ethylene glycol methyl ether with a volume ratio of 11:2:1:35, and stirred at room temperature 25°C for 24 hours to obtain a stable precursor body solution;

[0045] (2) Aging the precursor solution obtained in step (1) at room temperature for 24 hours to obtain a uniformly dispersed sol for spin coating;

[0046] (3) Add the sol obtained in step (2) dropwise on the substrate at a low speed of 800 rpm by spin coating, and then shake off the sol at a high speed of 4600 rpm to obtain a wet gel ...

Embodiment 3

[0053] A dielectric thin film with ultra-high discharge energy storage density, its expression is BiMg 0.5 Ti 0.60 o 3 .

[0054] The preparation method of the above-mentioned dielectric thin film with ultra-high discharge energy storage density comprises the following steps:

[0055] (1) Weigh Bi(NO 3 ) 3 ·5H 2 O, Mg(CH 3 COO) 2 4H 2 O, C 16 h 36 o 4 Ti raw material, the prepared raw material was dissolved in a mixed solvent of acetic acid, distilled water, acetylacetone and ethylene glycol methyl ether with a volume ratio of 11:2:1:35, and stirred at room temperature 25°C for 24 hours to obtain a stable precursor body solution;

[0056] (2) Aging the precursor solution obtained in step (1) at room temperature for 24 hours to obtain a uniformly dispersed sol for spin coating;

[0057] (3) Add the sol obtained in step (2) dropwise on the substrate at a low speed of 800 rpm by spin coating, and then shake off the sol at a high speed of 4600 rpm to obtain a wet gel ...

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Abstract

The invention provides a dielectric thin film with ultra-high discharge energy storage density and a preparation method thereof: its chemical formula is BiMg 0.5 Ti x o 3 , where x=0.50~0.85, its withstand voltage strength at room temperature is as high as 5000kV / cm, and its effective discharge energy storage density is as high as 125.7J / cm 3 . The preparation method steps of this high energy storage density dielectric thin film are as follows: (1) with Bi(NO 3 ) 3 , Mg(CH 3 COO) 2 、C 16 h 36 o 4 Ti is used as a raw material and dissolved in a mixed solvent to obtain a stable precursor solution; (2) The prepared precursor solution is left to age to obtain a uniformly dispersed sol for spin coating; (3) The sol is coated by spin coating On the substrate, dry and pyrolyze to obtain a gel film; (4) Rapidly raise the obtained gel film to the required temperature in a rapid heat treatment furnace to crystallize the thin film crystal form to obtain a medium with ultra-high discharge energy storage density film. The method has the advantages of simple preparation process, low cost and no pollution, and the prepared material has good energy storage performance.

Description

technical field [0001] The invention relates to the technical field of thin film materials applied to electronic components, in particular to a dielectric thin film and a preparation method. Background technique [0002] Capacitors are an indispensable passive component in modern electronic equipment. It has a series of important functions, such as voltage smoothing, pulse discharge, filtering, coupling, decoupling, power regulation, etc. With the increasing demand for the performance and efficiency of electronic equipment in industrial production, the requirements for capacitor materials are also increasing, and higher requirements are put forward for the miniaturization of capacitor materials. Due to the small electric field strength of the bulk energy storage medium, the further improvement of the energy storage density of the bulk material is limited, so the energy storage thin film has become a new research direction for energy storage capacitors. [0003] At present,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/475C04B35/622C04B35/624H01G4/12
CPCC04B35/475C04B35/62218C04B35/624C04B2235/3206C04B2235/6567H01G4/1218
Inventor 刘韩星谢鹃尧中华郝华曹明贺谢颜江
Owner WUHAN UNIV OF TECH
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