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A kind of preparation method of metal-doped molybdenum disulfide thin film

A molybdenum disulfide and metal doping technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of harsh doping conditions, poor controllability of metal doped molybdenum disulfide, etc. Short, easy to operate, good controllable effect

Active Publication Date: 2020-07-24
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] In view of the above defects or improvement needs of the prior art, the present invention provides a method for preparing a metal-doped molybdenum disulfide thin film, the purpose of which is to realize the growth and doping of molybdenum sulfide in one step by laser method, thereby solving the problem of the prior art Metal-doped molybdenum disulfide has technical problems such as poor controllability and harsh doping conditions

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  • A kind of preparation method of metal-doped molybdenum disulfide thin film
  • A kind of preparation method of metal-doped molybdenum disulfide thin film

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preparation example Construction

[0027] The preparation method specifically includes the following steps:

[0028] (1) Dissolving thiourea and molybdenum salt in an alcoholic solvent, wherein the molar ratio of sulfur to molybdenum is 20:1 to 5:1 to obtain a precursor solution; the molybdenum salt is molybdenum chloride or ammonium molybdate, The alcoholic solvent is isopropanol or ethanol, preferably stirred at a temperature of 60-100°C and a rotational speed of 1500-2000r / min for 0.8-1.5 hours to dissolve thiourea and molybdenum salt in the alcoholic solvent. The sulfur element concentration in the precursor solution is 15-25g / L, and the molybdenum element concentration is 4-12g / L. By adjusting the concentration ratio of sulfur element and molybdenum element, the growth size of molybdenum sulfide film can be controlled.

[0029] (2) After the metal salt solution is mixed with the precursor solution described in step (1), it is coated on the substrate to obtain a substrate coated with the precursor solution...

Embodiment 1

[0039] Add 200mg of thiourea, 80mg of molybdenum pentachloride, and 3.75ml of isopropanol into the flask, and stir magnetically for 1 hour to obtain a precursor solution. The rotational speed of the magnetic stirring is 1800r / min, and the temperature is 80°C. Take 0.1ml of the precursor solution and 0.1ml of gold chloride solution with a molar concentration of 5mmol / L, mix them well, spin coat them evenly on the substrate, place them in a vacuum chamber, and irradiate the substrate with a pulsed laser through the laser window. The schematic diagram of the device is as figure 1 As shown, the laser power is set to 250mJ, the radiation frequency is 3Hz, the number of pulses is 2000 times, the spot size is 3mm×3mm, and the laser moving speed is 3mm / s. After the laser irradiation is completed, the substrate is taken out from the vacuum chamber to obtain a gold-doped molybdenum disulfide thin film.

[0040] figure 2 It is the XPS figure of the gold-doped molybdenum disulfide film...

Embodiment 2

[0042] Add 200mg of thiourea, 60mg of molybdenum pentachloride, and 3.75ml of isopropanol into the flask, and stir magnetically for 1.5 hours to obtain a precursor solution. The rotational speed of the magnetic stirring is 1600r / min, and the temperature is 80°C. Take 0.1ml of the precursor solution and 0.1ml of the gold chloride solution with a molar concentration of 1mmol / L, fully mix, evenly spin-coat it on the substrate, and then place it in a vacuum chamber, and irradiate the substrate with a pulsed laser through the laser window. Set the laser power to 250mJ, the radiation frequency to 3Hz, the number of pulses to 2500 times, the spot size to 3mm×3mm, and the laser moving speed to 3mm / s. After the laser irradiation is completed, the substrate is taken out from the vacuum chamber to obtain a gold-doped molybdenum disulfide thin film.

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Abstract

The invention belongs to the field of preparation of a semiconductor thin film material and more particularly, relates to a metal-doped molybdenum disulfide thin film material preparation method. A mixed solution containing a sulfur source, a molybdenum source and a to-be-doped metal element coats a substrate, under a vacuum condition, laser is adopted to irradiate the surface of the substrate coated with the mixed solution, and a metal-doped molybdenum disulfide thin film is prepared. The preparation method can realize one-step completion of molybdenum sulfide growth and doping. The metal-doped molybdenum disulfide thin film prepared by using the method is good in uniformity and large in area, and the doping concentration can be adjusted according to the concentration of a metal salt solution. Through changing the laser radiation power, the size of a light spot and the pulse number, control on the crystal crystallization morphology can be realized. The preparation method is easy to operate, the repetition is high, the preparation time is short, and the efficiency is high.

Description

technical field [0001] The invention belongs to the field of semiconductor film material preparation, and more specifically relates to a method for preparing a metal-doped molybdenum disulfide film material. Background technique [0002] In recent years, two-dimensional layered nanomaterials, such as graphene, h-BN, and transition metal sulfides, have attracted much attention due to their excellent properties in electricity, mechanics, optics, and heat. Among them, molybdenum disulfide (MoS2), as a typical representative of transition metal sulfides, has high carrier mobility, good thermal stability, high electrical conductivity, good mechanical properties, high specific surface area, excellent semiconductor properties and Tunable bandgap, thus has great potential in optoelectronic device applications. The PN junction is the most basic structure of optoelectronic devices. Since the MoS2 thin film prepared by chemical vapor deposition (CVD) is naturally weak n, the p-type do...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L31/0296
CPCH01L21/02557H01L21/02623H01L31/02963
Inventor 曾祥斌任婷婷胡一说王文照吴少雄周广通曾洋郭振宇靳雯王士博
Owner HUAZHONG UNIV OF SCI & TECH
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