Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of pinecone-like zno nanometer microspheres, and application thereof

A technology of nano-microspheres and pine cones, applied in the field of ZnO nanometers, can solve the problems of complex preparation process, too large macro size, and insignificant advantages of electrode materials, and achieve the effects of uniform distribution of pores, simple process and mature preparation equipment.

Active Publication Date: 2020-04-14
WUYI UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Zhang et al. (Ind.Eng.Chem.Res., 50, 13355, 2011) used a microporous membrane separation device to prepare ZnO microspheres with a size of about 10 μm self-assembled from sheet-layer nano-ZnO particles. There are also many level structure, but its macroscopic size is too large and the preparation process is complicated, so the advantages of being used as photoelectric conversion electrode materials are not obvious

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of pinecone-like zno nanometer microspheres, and application thereof
  • A kind of preparation method of pinecone-like zno nanometer microspheres, and application thereof
  • A kind of preparation method of pinecone-like zno nanometer microspheres, and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A preparation method of pinecone-like ZnO nanometer microspheres, comprising the following steps:

[0029] 1), the preparation of the precursor mixed solution, polyethylene oxide-polypropylene oxide-polyethylene oxide triblock copolymer, lithium chloride (LiCl), zinc acetate according to the mass ratio of 0.5:20: Add the ratio of 100 to 10mL ethylene glycol, and magnetically stir at 60°C for 60min to obtain a clear precursor mixed solution;

[0030] 2) For the preparation of the precursor film, place the substrate on the heating plate and heat it to 200°C, use a spray gun to evenly spray the precursor mixed solution prepared in step 1) onto the substrate in the form of spray, B2 The alcohol evaporates quickly, and only the precursor film remains on the substrate. The pressure of the spray gun is 5MPa, and the spray is 30s;

[0031] 3) For the preparation of pinecone-like ZnO nanospheres, transfer the precursor film prepared in step 2) to a box-type annealing furnace, s...

Embodiment 2

[0034] A preparation method of pinecone-like ZnO nanometer microspheres, comprising the following steps:

[0035] 1), the preparation of the precursor mixed solution, polyethylene oxide-polypropylene oxide-polyethylene oxide triblock copolymer, lithium chloride (LiCl), zinc acetate according to the mass ratio of 0.5:25: Add the ratio of 100 to 15mL ethylene glycol, and magnetically stir at 80°C for 60min to obtain a clear precursor mixed solution;

[0036] 2) For the preparation of the precursor film, place the substrate on the heating plate and heat it to 200°C, use a spray gun to evenly spray the precursor mixed solution prepared in step 1) onto the substrate in the form of spray, B2 The alcohol evaporates quickly, and only the precursor film remains on the substrate. The pressure of the spray gun is 5MPa, and the spray is 60s;

[0037] 3) For the preparation of pinecone-like ZnO nanospheres, the precursor film prepared in step 2) is transferred to a box-type annealing furn...

Embodiment 3

[0040] Pinecone-like Li-doped ZnO nanospheres applied to photodetectors

[0041] Continue to epitaxially grow Au electrodes on the pinecone-like Li-doped ZnO nano-microspheres prepared in Example 1, thereby preparing a photodetector, specifically: using a mask plate and an electron beam to evaporate the metal Au electrode, and annealing Forming ohmic contacts and Schottky junctions, the photodetector includes pinecone-like Li-doped ZnO nanospheres and metal Au electrodes, and its structure is as follows Figure 4 As shown, the prepared pinecone-like Li-doped ZnO nanosphere photodetector has a dark current of only 31.2pA under 1V bias, and the maximum value of the device reaches 0.89A / W under 1V bias .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
conversion efficiencyaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing pine cone-like ZnO nanometer microspheres and its application, which includes the following steps: 1), using zinc acetate, pore formers, and doping agents to prepare a precursor mixed solution; 2), using precursors The precursor film is prepared from a mixed solution; 3), pinecone-like ZnO nano-microspheres are prepared by controlling different heating rates; the preparation equipment of the present invention is mature, the process is simple, and it is convenient for large-scale production; the present invention accurately controls the preparation process Different reaction temperatures, and the use of zinc acetate and pore-forming agents are used to decompose water and carbon dioxide into water and carbon dioxide, which are separated from the microspheres to help form pore channels. Cl ions in lithium chloride (LiCl) are separated in the form of gas by using dopants. , helping to form more pores, the size of the prepared microspheres is controllable, and the pores are evenly distributed; the pine cone-like Li-doped ZnO nanomicrospheres prepared by the invention have a wide range of applications and can be used in catalytic degradation, photoelectric detectors, Gas-sensitive detectors and other fields play an active role.

Description

technical field [0001] The invention relates to the technical field of ZnO nanometers, in particular to a method for preparing pinecone-like ZnO nanometer microspheres and an application thereof. Background technique [0002] Zinc oxide (ZnO) is a typical third-generation semiconductor material. Since the ZnO crystal has a bandgap width as high as 3.37eV at room temperature and an exciton binding energy as high as 60meV, it has strong free exciton transition luminescence in the ultraviolet band, and has chemical stability, near-ultraviolet emission, and biological non-toxicity. It has unique advantages and potential application prospects in the fields of photocatalysis, photoelectricity, photovoltaics and sensors. [0003] A very important research direction of ZnO materials is ZnO nanomaterials, such as ZnO nanodots, ZnO nanospheres, ZnO nanocolumns, ZnO nanoflowers and so on. ZnO nanomaterials have outstanding advantages such as large specific surface area, quantum effec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02B82Y30/00G01D5/26G01N21/00B01J23/06
CPCG01D5/26G01N21/00B82Y30/00C01G9/02B01J23/06C01P2004/62C01P2004/03C01P2002/72B01J35/39
Inventor 杨为家何鑫陈梅刘俊杰刘铭全刘艳怡王诺媛刘均炎梁萍陈毅湛
Owner WUYI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com