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A kind of zno nanometer material, and preparation method thereof

A technology of nanomaterials and nanowires, which is applied in the field of ZnO nanomaterials and its preparation, can solve the problems of insignificant advantages of electrode materials, excessive macroscopic size, complex preparation process, etc., and achieve mature preparation equipment, simple process, and convenient scale The effect of chemical production

Active Publication Date: 2020-05-12
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Zhang et al. (Ind.Eng.Chem.Res., 50, 13355, 2011) used a microporous membrane separation device to prepare ZnO microspheres with a size of about 10 μm self-assembled from sheet-layer nano-ZnO particles. There are also many level structure, but its macroscopic size is too large and the preparation process is complicated, so the advantages of being used as photoelectric conversion electrode materials are not obvious

Method used

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  • A kind of zno nanometer material, and preparation method thereof
  • A kind of zno nanometer material, and preparation method thereof
  • A kind of zno nanometer material, and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] A preparation method of ZnO nanometer material, comprising the following steps:

[0031] 1), the preparation of the precursor mixed solution, the pore-forming agent polyethylene oxide-polypropylene oxide-polyethylene oxide triblock copolymer and zinc acetate were added to 10mL according to the mass ratio of 0.5:100 In ethylene glycol, magnetically stirred at 60°C for 60min to obtain a clear precursor mixed solution;

[0032] 2) For the preparation of the precursor thin film, place the substrate on a spin coater, first drop 2 drops of the precursor mixed solution on the center of the substrate, and then rotate at 500 rpm for 30s to spread the mixed solution on the substrate ;

[0033] 3), then, rotate at 1500 rpm for 100s;

[0034] 4), then, rotate at 3000 rpm for 120s to obtain a uniformly distributed precursor film;

[0035] 5), high temperature sintering, transfer the precursor film prepared in step 4) to a box-type annealing furnace, start from room temperature, r...

Embodiment 2

[0039] A preparation method of ZnO nanometer material, comprising the following steps:

[0040] 1), the preparation of the precursor mixed solution, the pore-forming agent polyethylene oxide-polypropylene oxide-polyethylene oxide triblock copolymer and zinc acetate were added to 25mL according to the mass ratio of 0.5:100 In ethylene glycol, magnetically stirred at 80°C for 80min to obtain a clear precursor mixed solution;

[0041] 2) For the preparation of the precursor thin film, place the substrate on a spin coater, first drop 4 drops of the precursor mixed solution in the center of the substrate, and then rotate at 500 rpm for 50s to spread the mixed solution on the substrate ;

[0042] 3), then, rotate at 2000 rpm for 30s;

[0043] 4), then, rotate at 4000 rpm for 60s to obtain a uniformly distributed precursor film;

[0044] 5), high temperature sintering, transfer the precursor film prepared in step 4) to a box-type annealing furnace, start from room temperature, rai...

Embodiment 3

[0047] Application of ZnO Nanomaterials in Photodetectors

[0048] On the ZnO nanomaterial prepared in Example 1, continue to epitaxially grow the Au electrode, thereby preparing a photodetector, specifically: use a mask plate and an electron beam to evaporate the metal Au electrode, and form an ohmic contact and a Schottky junction after annealing, The photodetector consists of ZnO nanomaterials and metal Au electrodes, and its structure is as Figure 4 As shown, the dark current of the prepared ZnO nanomaterial photodetector is only 30.2pA under 1V bias, and the maximum value of the device reaches 0.874A / W under 1V bias.

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Abstract

The invention provides a ZnO nanomaterial and a preparation method thereof. The material includes a substrate layer, a nanowall formed by stacking ZnO nanowires and a nanogrid composed of nanowalls arranged on the substrate layer. Specifically, It includes the following steps: 1), using zinc acetate, pore-forming agent, and dopant to prepare a precursor mixed solution; 2), using the precursor mixed solution to prepare a precursor film; 3), high-temperature sintering to obtain ZnO nanomaterials; prepared by the present invention The equipment is mature, the process is simple, and it is convenient for large-scale production; by accurately controlling the sintering temperature, and using zinc acetate and pore-forming agents to decompose into water and carbon dioxide, and separate them from the microspheres, it helps to form pores and nanowires; during the 500°C insulation stage , the precursor will be completely decomposed and promote the crystallization of ZnO nanowires, thereby obtaining ZnO nanomaterials with good crystallization state. The size of the prepared microspheres is controllable and the pore distribution is uniform; the ZnO nanomaterials prepared by the present invention have a wide application range.

Description

technical field [0001] The invention relates to the technical field of ZnO nanometer materials, in particular to a ZnO nanometer material and a preparation method thereof. Background technique [0002] Zinc oxide (ZnO) is a typical third-generation semiconductor material. Since the ZnO crystal has a bandgap width as high as 3.37eV at room temperature and an exciton binding energy as high as 60meV, it has strong free exciton transition luminescence in the ultraviolet band, and has chemical stability, near-ultraviolet emission, and biological non-toxicity. It has unique advantages and potential application prospects in the fields of photocatalysis, photoelectricity, photovoltaics and sensors. [0003] A very important research direction of ZnO materials is ZnO nanomaterials, such as ZnO nanodots, ZnO nanospheres, ZnO nanocolumns, ZnO nanoflowers and so on. ZnO nanomaterials have outstanding advantages such as large specific surface area, quantum effect, local surface confine...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02B82Y30/00B82Y40/00B01J23/06G01N21/85
CPCG01N21/85B82Y30/00B82Y40/00C01G9/02B01J23/06C01P2002/72C01P2004/03C01P2004/62G01N2021/8578B01J35/39
Inventor 杨为家何鑫刘俊杰刘铭全刘艳怡王诺媛刘均炎沈耿哲张弛赵丽特
Owner WUYI UNIV
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