Efficient and energy-saving reducing furnace chassis and polycrystalline silicon reducing furnace

Abstract

The invention discloses an efficient and energy-saving reducing furnace chassis. The efficient and energy-saving reducing furnace chassis comprises a chassis, wherein a central feeding hole is formedin the chassis, n electrode ring layers and n-1 feeding ring layers are arranged on the chassis, and n is an positive integer more than or equal to 4; the electrode ring layers and the feeding ring layers are arranged at intervals by taking the central feeding hole as a round center; each feeding ring layer is provided with at least four feeding holes; the nth electrode ring layer is provided with4n pairs of electrodes according to the counting of the electrode ring layers from inside to outside; each two adjacent electrodes of the same electrode ring layer are arranged in an equal interval manner; and a discharging ring layer is arranged outside the nth electrode ring layer and is provided with at least two discharging holes, and the two discharging holes are formed in the discharging ring layer in an equal interval manner. By redesigning the layout of the electrodes and feeding holes on and in the reducing furnace chassis, the temperature field and gas field for reaction in a reducing furnace are improved, and meanwhile, the raw material conversion rate is increased, and the production cost is lowered. The invention further provides a polycrystalline silicon reducing furnace including the efficient and energy-saving reducing furnace chassis.

Description

technical field [0001] The invention relates to the field of polysilicon production, in particular to a high-efficiency energy-saving reduction furnace chassis and a polysilicon reduction furnace. Background technique [0002] At present, the mainstream polysilicon production technology is the improved Siemens method: the silicon core connected to the electrode is used as the deposition substrate, and the high-purity trichlorohydrogen silicon is reduced and deposited in a hydrogen atmosphere to form polysilicon by using a high-temperature reduction process. [0003] Theoretically, the more electrode pairs in the polysilicon reduction furnace, that is, the more the number of silicon cores, the greater the output of polysilicon per furnace; at the same time, the more polysilicon cores per unit area, occupying the space of the gas, so in the same raw material Under the gas flow rate, the concentration of the trichlorosilane raw material per unit volume increases, so that the de...

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Problems solved by technology

[0004] However, in fact, with the increase in the number of rods in the polysilicon reduction furnace, the complex chemical reactions, mass transfer, heat transfer and other processes in the polysilicon reduction furnace have a great impact on the temperature field (temperature distribution) and gas field (gas concentration distribution) in the reaction furnace. and flow conditions) the degree of disturbance becomes larger, making it difficult for the raw material gas to be evenly distributed in the reduction furnace, the concentration of the raw material gas around some silicon cores is low, and the flow rate of the local reaction gas is too fast

In order to allow each silicon core to fully contact with the raw material gas for reaction, only an excessive amount of raw material gas can only be supplied, resulting in a low conversion rate of raw materials and the risk of furnace failure, resulting in increased production costs and poor quality

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